Abstract: Provided are a mineralizing removal method and apparatus for highly concentrated iodine in radioactive wastewater. According to the present invention, since only a small amount of sludge is discharged as compared to the previous treatment methods, a generation amount of the radioactive waste may be significantly decreased, such that wastewater containing highly or ultra-highly concentrated iodine may also be effectively treated. Further, only iodine may be selectively removed regardless of the presence of competitive anions in the wastewater. Treatment may be performed under a neutral or weak alkaline condition rather than an acidic condition, such that a volatilization of radioactive iodine was fundamentally blocked, and at the time of discharging the wastewater, a neutralization treatment process is not required.

Abstract: Provided are a mineralizing removal method and apparatus for highly concentrated iodine in radioactive wastewater. According to the present invention, since only a small amount of sludge is discharged as compared to the previous treatment methods, a generation amount of the radioactive waste may be significantly decreased, such that wastewater containing highly or ultra-highly concentrated iodine may also be effectively treated. Further, only iodine may be selectively removed regardless of the presence of competitive anions in the wastewater. Treatment may be performed under a neutral or weak alkaline condition rather than an acidic condition, such that a volatilization of radioactive iodine was fundamentally blocked, and at the time of discharging the wastewater, a neutralization treatment process is not required.

Abstract: Provided are a purification method and apparatus for radioactive wastewater. The purification method and apparatus for radioactive wastewater according to the present invention, which is a biological purification apparatus for radioactive wastewater containing radioactive iodine, includes: an anoxic tank into which wastewater containing radioactive iodine is introduced; and a microbial purification tank connected to the anoxic tank so as to allow wastewater in an anaerobic state to be introduced and supplied with a metal reducing bacteria source, an electron donor, and a copper ion source, wherein radioactive iodine and copper ions are bound to each other to form copper iodide by metal reducing bacteria, and the formed copper iodide is precipitated in the microbial purification tank, such that the radioactive iodide in the wastewater is removed as sludge.

Abstract: The present invention relates to a thin film transistor array panel, a liquid crystal display, and a manufacturing method of the same. A TFT array for a LCD or an EL display is used as a circuit board for driving the respective pixels in an independent manner. The present invention provides pixel electrodes and contact assistants, which connect expansions of gate lines and data lines to an external circuit, having a structure of double layers including IZO layer and ITO layer. The ITO layer is disposed on the IZO layer. In the present invention, the pixel electrodes are formed to have double layers of IZO layer and ITO layer to avoid wires from getting damage by the ITO etchant and to prevent prove pins from having accumulation of foreign body during the gross test. In the present invention, the contact assistants may only be formed to have double layers of IZO layer and ITO layer to prevent prove pins from having accumulation of foreign body during the gross test.

Abstract: The present invention relates to a thin film transistor array panel, a liquid crystal display, and a manufacturing method of the same. A TFT array for a LCD or an EL display is used as a circuit board for driving the respective pixels in an independent manner. The present invention provides pixel electrodes and contact assistants, which connect expansions of gate lines and data lines to an external circuit, having a structure of double layers including IZO layer and ITO layer. The ITO layer is disposed on the IZO layer. In the present invention, the pixel electrodes are formed to have double layers of IZO layer and ITO layer to avoid wires from getting damage by the ITO etchant and to prevent prove pins from having accumulation of foreign body during the gross test. In the present invention, the contact assistants may only be formed to have double layers of IZO layer and ITO layer to prevent prove pins from having accumulation of foreign body during the gross test.