Abstract: An antenna apparatus includes: a parabolic reflector; a dielectric support pedestal; a sub-reflector connected to an upper part of the dielectric support pedestal; and a waveguide connected to a lower part of the dielectric support pedestal, wherein the parabolic reflector has a curved surface in which a ratio of a focal length to a diameter is greater than a preset value, and at least one corrugation configured to suppress a cross polarization is formed in a region of the dielectric support pedestal.

Abstract: According to the present disclosure, an antenna apparatus which includes a hollow pillar shaped waveguide extending in a first direction and at least one ridge protruding from an inner circumferential surface of the waveguide and extending in the first direction, wherein the ridge has at least one recessed groove formed in the first direction; and an antenna apparatus which includes the waveguide, the ridge and the iris structure protruding from the inner circumferential surface of the waveguide along a plane intersecting the first direction, are provided.

Abstract: A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.

Abstract: A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.

Abstract: Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.

Abstract: Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.

Abstract: A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.