Abstract: Disclosed is a surface plasmon optic device that has a periodic array of apertures in a dielectric substrate and a metal film formed on the dielectric substrate and emits light from metal-air interface. The surface plasmon optic device includes a surface plasmon generating apparatus, a surface plasmon detecting apparatus, a surface plasmon controlling apparatus, an etching apparatus, etc. if a metal diffraction grating is disposed on the metal film having a well-defined interface, propagation of the surface plasmon can be efficiently reflected, divided and controlled. Further, radiating surface plasmon having a half period of a lattice constant formed at air-metal (1, 0) can be preserved at a distance of at least a few micron.

Abstract: The present invention relates to a flexible electro-optical apparatus such as a flexible high-resolution liquid crystal display wherein single-crystal silicon semiconductor is used in manufacturing driver circuits and pixel arrays, and a method for manufacturing the same. The flexible electro-optical apparatus according to the present invention comprises a flexible lower substrate portion including device layers where electronic devices are formed on a flexible single-crystal layer; a flexible upper substrate portion to be bonded to said lower substrate portion; and an electro-optical layer between said lower substrate portion and said upper substrate portion.

Abstract: The present invention relates to a flexible single-crystal film and a method of manufacturing the same from a single-crystal wafer. That is, the present invention can manufacture a silicon-on-insulator (SOI) wafer comprising a base wafer, one or more buried insulator layers, and a single-crystal layer into a flexible single-crystal film with a desired thickness by employing various wafer thinning techniques. The method for manufacturing a flexible film comprises the steps of (i) providing a SOI wafer comprising a base wafer, one or more buried insulator layers on the base wafer, and a single-crystal layer on said one or more buried insulator layers, (ii) forming one or more protective insulator layers on said single-crystal layer, (iii) removing said base wafer, and (iv) removing one or more of the insulator layers.

Abstract: The present invention provides methods and pharmaceutical compositions for inhibiting expressions of HIF-1 and HIF-1-regulated genes, angiogenesis, tumor growth, or tumor progression/metastasis comprising contacting the tumor cells or tissue with a composition comprising 3-(5′-hydroxymethyl-2′-furyl)-1-benzylindazole.

Abstract: A diffusion barrier layer having nitrogen at least on the top surface thereof is formed before activating the diffusion barrier layer used as an underlying layer during an electroless plating process, thereby enabling catalytic metal nuclei to be densely and uniformly formed on the diffusion barrier layer during the activation of the diffusion barrier layer. In a method for forming metal interconnections, a diffusion barrier layer having a nitrogen-containing layer exposed on the top surface thereof is formed on a semiconductor substrate. Then, the surface of the diffusion barrier layer is activated, and an electroless plated layer is formed on the activated diffusion barrier layer.