Abstract: A polymer includes a first repeating unit and a second repeating unit forming a main chain, the first repeating unit including at least one first conjugated system, and the second repeating unit including at least one second conjugated system and a multiple hydrogen bonding moiety represented by Chemical Formula 1.

Abstract: A thin film transistor includes a gate electrode and an organic semiconductor overlapping the gate electrode. A gate insulating layer is disposed between the gate electrode and the organic semiconductor. A source electrode and a drain electrode are disposed on and electrically connected to the organic semiconductor. A solvent selective photosensitive pattern is disposed on the organic semiconductor and between the source electrode and the drain electrode. An electronic device may include the thin film transistor.

Abstract: Provided are a biomarker composition for the diagnosis of moyamoya disease, including caveolin-1, a kit for the diagnosis of moyamoya disease, a method of providing information for moyamoya disease diagnosis, and a method of screening a moyamoya disease therapeutic agent. According to the present disclosure, specific treatment for moyamoya disease is possible by distinguishing the disease from atherosclerosis, which is a similar cerebrovascular stenosis disease, and thus unnecessary factors or risk factors that may be accompanied by side effects may be avoided and, therefore, may be applied to effective MMD therapies.

Abstract: A polymer includes a first repeating unit and a second repeating unit forming a main chain, the first repeating unit including at least one first conjugated system, and the second repeating unit including at least one second conjugated system and a multiple hydrogen bonding moiety represented by Chemical Formula 1.

Abstract: Disclosed are an organic semiconductor thin film, a manufacturing method thereof, and a thin film transistor and an electronic device including the organic semiconductor thin film. The organic semiconductor thin film includes a matrix. The matrix includes an elastomer and nanoconfined polymer structures embedded in the matrix. The nanoconfined polymer structures form a polymer network. The nanoconfined polymer structures include a conjugation semiconductor polymer. The conjugation semiconductor polymer includes a repeating unit having at least one conjugation system in its main chain. The nanoconfined polymer structures are present in an upper surface layer and a lower surface layer of the organic semiconductor thin film respectively.

Abstract: A polymeric dielectric may include a coordination complex of a modified elastic polymer and a metal cation. The modified elastic polymer may include an organic ligand moiety that coordinates the metal cation in a main chain of the elastic polymer. Provided are a method of manufacturing the same, and an electronic device and a thin film transistor including the same.

Abstract: An example embodiment relates to an organic semiconductor compound, represented by Chemical Formula 1 herein, which may be polymerized and used in transistors and electronic devices. The organic semiconductor compound includes a base structure of four fused benzene rings with functional groups R1 to R3 connected to a first benzene ring and with functional groups R4 to R6 connected to a second benzene ring. The base structure's third and fourth benzene rings are connected to X1, X2 and X3, X4 respectfully. At least one of X1 and X2 is a sulfur atom. At least one of X3 and X4 is a sulfur atom. The base structure further includes functional groups R7 and R8.

Abstract: An organic semiconductor compound represented by Chemical Formula 1 is highly fused due to fusion of greater than or equal to 4 rings, and has smooth intermolecular charge transfer due to relatively high planarity.

Abstract: A low-molecular-weight fused polycyclic heteroaromatic compound may have a compact planar structure in which seven or more rings are fused together, and thereby exhibits high charge mobility, and furthermore, enables the use of a deposition process or a room-temperature solution process when applied to devices, therefore realizing improved processibility. An organic thin film and electronic device may include the fused polycyclic heteroaromatic compound.

Abstract: A thin film transistor panel includes a gate electrode on a substrate, a gate insulating layer on the gate electrode, an organic semiconductor overlapping with the gate electrode, a source electrode and a drain electrode electrically connected to the organic semiconductor, a fluorine-containing organic insulation layer covering the organic semiconductor, and a photosensitive organic insulation layer covering the fluorine-containing organic insulation layer.

Abstract: An organic semiconductor compound including a structural unit represented by Chemical Formula 1.

Abstract: An organic semiconductor compound represented by Chemical Formula 1 is highly fused due to fusion of greater than or equal to 4 rings, and has smooth intermolecular charge transfer due to relatively high planarity.

Abstract: An organic semiconductor device includes an organic semiconductor, an electrode electrically connected to the organic semiconductor, and a self-assembled monolayer positioned between the organic semiconductor and the electrode, the self-assembled monolayer including a monomer having an anchor group at one end and an ionic functional group at another end.

Abstract: An organic semiconductor polymer includes a moiety represented by the following Chemical Formula 1 and a heteroaromatic moiety having at least one of sulfur (S) and selenium (Se). In the Chemical Formula 1, R1, R2, R3a, R3b, R4a, R4b, R5a, and R5b, a1, a2, b1, and b2 are the same as described in the detailed description.

Abstract: The present invention relates to an inorganic board comprising a base layer containing magnesium-based inorganic materials and phase change materials, and to a method for producing the board. The inorganic board of the present invention employs magnesium-based inorganic materials instead of plaster used in conventional boards, and thus improves the strength and water resistance thereof as compared to conventional plaster boards. Accordingly, the board of the present invention is formed so as to be thin, and the content of the phase change materials in the base layer increases by the superior blending ratio of magnesium-based inorganic materials and phase change materials, thus maintaining the indoor temperature of the structure constructed by the board of the present invention at a comfortable level. Therefore, the inorganic board of the present invention can be effectively used in interior materials or the like for a building, which require strength and water resistance properties.

Abstract: A thin film transistor includes a gate electrode and an organic semiconductor overlapping the gate electrode. A gate insulating layer is disposed between the gate electrode and the organic semiconductor. A source electrode and a drain electrode are disposed on and electrically connected to the organic semiconductor. A solvent selective photosensitive pattern is disposed on the organic semiconductor and between the source electrode and the drain electrode. An electronic device may include the thin film transistor.

Abstract: An organic semiconductor compound may be represented by the above Chemical Formula 1 or Chemical Formula 2, and an organic thin film may include the organic semiconductor compound according to Chemical Formula 1 or 2.

Abstract: An organic electronic device may include an organic semiconductor compound represented by the following Chemical Formula 1 or Chemical Formula 2. Each substituent of the above Chemical Formulas 1 and 2 may be the same as described in the detailed description.

Abstract: An organic semiconductor compound may include a structural unit represented by the aforementioned Chemical Formula 1 and an organic thin film and an electronic device may include the organic semiconductor compound.

Abstract: An organic composition for a semiconductor device includes a compound for an organic semiconductor device including a structural unit; and a metal-containing compound selected from a transition element-containing compound, a lanthanide-containing compound, and a combination thereof, which results in improved charge mobility due to a reduced grain boundary.