Abstract: A fuel electrode for a solid oxide electrolysis cell (SOEC) with improved high-temperature electrolysis efficiency includes a carrier having a first particle including nickel, and a second particle comprising yttria-stabilized zirconia, and a catalyst having a first element including at least one selected from the group consisting of Fe, Co, Pd, Cu, Mo, and combinations thereof, and a second element comprising gadolinia-doped ceria.

Abstract: Provided are a device and method for tagging training data. The method includes detecting and tracking one or more objects included in a video using artificial intelligence (AI), when there is an object to be split in a result of tracking the detected objects, splitting the object in object units, and when there are identical objects to be merged among split objects, merging the objects.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: Disclosed herein is a method of printing a nanostructure including: preparing a template substrate on which a pattern is formed; forming a replica pattern having an inverse phase of the pattern by coating a polymer thin film on an upper portion of the template substrate, adhering a thermal release tape to an upper portion of the polymer thin film, and separating the polymer thin film from the template substrate; forming a nanostructure by depositing a functional material on the replica pattern; and printing the nanostructure deposited on the replica pattern to a substrate by positioning the nanostructure on the substrate, applying heat and pressure to the nanostructure, and weakening an adhesive force between the thermal release tape and the replica pattern by the heat.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: Provided is a fluorine-doped tin oxide support, a platinum catalyst for a fuel cell having the same, and a method for producing the same. Also described is a high electrical conductivity and electrochemical durability by doping fluorine to the tin oxide-based support through an electrospinning process. Thus, while resolving a degradation issue of the carbon support in the conventional commercially available platinum/carbon (Pt/C) catalyst, what is designed is to minimize an electrochemical elution of dopant or tin, which is a limitation of the tin oxide support itself and has excellent performance as a catalyst for a fuel cell.

Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.

Abstract: A stack package and a method of manufacturing the stack package are provided. The method includes: attaching a first semiconductor device onto a first surface of a first package substrate; attaching a molding resin material layer onto a first surface of a second package substrate; arranging the first surface of the first package substrate and the first surface of the second package substrate to face each other; compressing the first package substrate and the second package substrate while reflowing the molding resin material layer; and hardening the reflowed molding resin material layer.

Abstract: Provided is a phase-shift blankmask in which a phase-shift layer is formed in at least two continuous layers or a multi-layer film and an uppermost phase-shift layer included in the phase-shift layer is thinly formed to contain a small amount of oxygen (O) so as to enhance chemical resistance and durability thereof. Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability.

Abstract: There is provided a susceptor. The susceptor includes: a body having a first surface, a second surface opposite the first surface, and an outer side surface connecting the first surface and the second surface; at least one pocket recessed from the first surface to accommodate at least one wafer therein, respectively; at least one tunnel respectively located below the pocket and extending from a center of the body to the outer side surface; at least one connecting channel each of which connects each of the pocket to each of the tunnel; and a supply line connected to the tunnel at the center of the body and supplying a gas from an outside in order for the gas to flow from the center of the body to the outer side surface.

Abstract: A non-volatile memory device includes a substrate including a cell region and a peripheral circuit region, a first insulation layer formed over the substrate to cover the peripheral circuit region thereof, and interlayer dielectric patterns and first conductive patterns alternately formed over the substrate of the cell region. Each of the interlayer dielectric patterns and the first conductive patterns includes a horizontal part extending along a surface of the substrate and a vertical part extending along a sidewall of the first insulation layer.

Abstract: Provided is a phase-shift blankmask in which a phase-shift layer is formed in at least two continuous layers or a multi-layer film and an uppermost phase-shift layer included in the phase-shift layer is thinly formed to contain a small amount of oxygen (O) so as to enhance chemical resistance and durability thereof. Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability.

Abstract: A method for manufacturing semiconductor device includes forming an interlayer dielectric layer including a contact plug defined therein to electrically couple a semiconductor substrate on which a cell region and a dummy region are defined. A sacrificial layer is formed over the interlayer dielectric layer. An etch stop pattern is formed over the sacrificial layer, the etch stop pattern being vertically aligned to the dummy region. A storage electrode region through the sacrificial layer is defined to expose a first storage electrode contact of the cell region, the second storage electrode contact of the dummy region remaining covered by the sacrificial layer. A conductive layer is deposited within the storage electrode region to form a storage electrode contacting the first storage electrode contact of the cell region.

Abstract: A non-volatile memory device includes a substrate including a cell region and a peripheral circuit region, a first insulation layer formed over the substrate to cover the peripheral circuit region thereof, and interlayer dielectric patterns and first conductive patterns alternately formed over the substrate of the cell region. Each of the interlayer dielectric patterns and the first conductive patterns includes a horizontal part extending along a surface of the substrate and a vertical part extending along a sidewall of the first insulation layer.

Abstract: A method for manufacturing semiconductor device includes forming an interlayer dielectric layer including a contact plug defined therein to electrically couple a semiconductor substrate on which a cell region and a dummy region are defined. A sacrificial layer is formed over the interlayer dielectric layer. An etch stop pattern is formed over the sacrificial layer, the etch stop pattern being vertically aligned to the dummy region. A storage electrode region through the sacrificial layer is defined to expose a first storage electrode contact of the cell region, the second storage electrode contact of the dummy region remaining covered by the sacrificial layer. A conductive layer is deposited within the storage electrode region to form a storage electrode contacting the first storage electrode contact of the cell region.

Abstract: A method of preparing optically pure (S)-3-hydroxypyrrolidine is disclosed. The present invention provides a method of economically and industrially preparing optically and chemically pure (S)-3-hydroxypyrrolidine, through a process comprising introducing an amine protecting group by using optically pure 4-amino-(S)-2-hydroxybutylic acid as a starting material, reducing a carboxylic acid group into a primary alcohol, removing the amine protecting group to form an amine salt, halogenating the primary alcohol, and amine cyclization; and through a simple purification process, i.e., distillation under reduced pressure. As another method, the present invention provides a method of preparing optically and chemically pure (S)-3-hydroxypyrrolidine, through a process comprising esterifying optically pure 4-amino-(S)-2-hydroxybutylic acid as a starting material, lactam cyclization, and reduction.

Abstract: A method of preparing optically pure (S)-3-hydroxypyrrolidine is disclosed. The present invention provides a method of economically and industrially preparing optically and chemically pure (S)-3-hydroxypyrrolidine, through a process comprising introducing an amine protecting group by using optically pure 4-amino-(S)-2-hydroxybutylic acid as a starting material, reducing a carboxylic acid group into a primary alcohol, removing the amine protecting group to form an amine salt, halogenating the primary alcohol, and amine cyclization; and through a simple purification process, i.e., distillation under reduced pressure. As another method, the present invention provides a method of preparing optically and chemically pure (S)-3-hydroxypyrrolidine, through a process comprising esterifying optically pure 4-amino-(S)-2-hydroxybutylic acid as a starting material, lactam cyclization, and reduction.

Abstract: A mobile terminal reduces power consumption. When a sleep mode is set in which power is supplied only to components requisite for a reception standby while power supply to the other components is cutoff, power supply to a flash memory is cut off by using a sleep mode signal such as a TCXO_EN signal with a low logic level, thereby reducing power consumption of the mobile terminal and lengthening a standby time of the mobile terminal.