Abstract: A method of performing cross-authentication in a vehicle controller interworking with an external device includes: generating a random number S and transmitting the random number S to the external device according to an authentication request message received from the external device; generating a variable i using a first function having the random number S as a parameter; generating a first session key Ks using a second function having the variable i and a pre-stored secret key K as parameters; receiving a first response key from the external device; generating a second response key using a third function having the random number S, the variable i and the first session key Ks as parameters; and authenticating the external device based on whether the first response key is equal to the second response key.

Abstract: A method of performing cross-authentication in a vehicle controller interworking with an external device includes: generating a random number S and transmitting the random number S to the external device according to an authentication request message received from the external device; generating a variable i using a first function having the random number S as a parameter; generating a first session key Ks using a second function having the variable i and a pre-stored secret key K as parameters; receiving a first response key from the external device; generating a second response key using a third function having the random number S, the variable i and the first session key Ks as parameters; and authenticating the external device based on whether the first response key is equal to the second response key.

Abstract: A method of forming a metal wire of a semiconductor device is disclosed. The method of forming a metal wire of a semiconductor device can reduce the junction leakage current caused by the reduction of the current resistance and can improve the reliability of the semiconductor device by adding the same dopant as that of a lower junction layer on the surface of a bit line contact before the deposition of the titanium film or the titanium nitride film, in order to maximize the diffusion of the dopant in the junction area consumed through heat treatment in the formation of the titanium silicide film and improve the contact resistance caused by the increase of the concentration of the dopant existing in the junction area.

Abstract: A method for forming a metal wire of a semiconductor device is disclosed. The method for forming a metal wire of a semiconductor device can reduce a junction leakage current and improve the reliability of a semiconductor device by forming a silicon thin film on a silicon substrate with a contact hole before depositing a titanium film or a titanium nitride film in order to improve contact resistance caused by the increase of a dopant concentration by maximally suppressing the formation of a titanium silicide film on a junction area in the silicon substrate in the heat treatment process.

Abstract: A method of forming a metal wire of a semiconductor device is disclosed. The method of forming a metal wire of a semiconductor device can reduce the junction leakage current caused by the reduction of the current resistance and can improve the reliability of the semiconductor device by adding the same dopant as that of a lower junction layer on the surface of a bit line contact before the deposition of the titanium film or the titanium nitride film, in order to maximize the diffusion of the dopant in the junction area consumed through heat treatment in the formation of the titanium silicide film and improve the contact resistance caused by the increase of the concentration of the dopant existing in the junction area.

Abstract: A circuit for reading out data written on a disk filters respective frequencies of data of different bands. The circuit has a filter unit (24) consisting of a plurality of filters each corresponding to the frequency of a different band and a filter selection controller (25) for controlling the frequency supplied to the filter unit (24) to thereby filter with respect to the frequencies of different bands. Thus, high density data can be written on the disk, and filtering of the data is optimized, so that the signal quality of the disk read-out circuit is enhanced.