Abstract: Disclosed in the present specification is a method by which a terminal transmits a sounding reference signal (SRS) in a wireless communication system, the method: receiving, from a base station, configuration information relating to an SRS transmission, wherein the configuration information includes a first parameter set relating to a first SRS transmission and a second parameter set relating to a second SRS transmission; receiving downlink control information (DCI) from the base station; and transmitting, to the base station, a first SRS and/or a second SRS on the basis of the DCI.

Abstract: A method for a terminal to transmit a Sounding Reference Signal in a wireless communication system according to an embodiment of the present disclosure comprises: a step for receiving an upper layer message including settings information related to the SRS; a step for receiving downlink control information for triggering the transmission of the SRS, wherein the settings information related to the SRS includes a plurality of settings sets related to at least one among the number of transmissions of the SRS, a subframe, a mapping start symbol of the SRS, and/or the time duration over which the SRS is to be transmitted; and a step for transmitting the SRS, wherein the DCI includes information representing one of the plurality of settings sets. The SRS is characterized by being an aperiodic SRS and being repeatedly transmitted in a plurality of subframes through a plurality of contiguous symbols.

Abstract: A method for reporting channel state information (CSI) by a terminal in a wireless communication system according to an embodiment of the present specification including steps of: receiving configuration information related to reporting of channel state information (CSI); receiving a downlink reference signal (DL RS) related to measurement on the basis of the configuration information; and reporting the channel state information (CSI) on the basis of the DL RS. Spatial relation RS information related to transmission of the channel state information (CSI) is based on spatial relation quasi-colocation (QCL) RS information related to the DL RS.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: Disclosed are a semiconductor device and an image sensor including the same. The semiconductor device includes a device isolation layer defining an active region on a semiconductor substrate, a gate electrode crossing the active region, a gate insulating pattern between the gate electrode and the semiconductor substrate, a first impurity region provided at a first side of the gate electrode in the active region, and a second impurity region provided at a second side of the gate electrode in the active region, and the gate insulating pattern includes a first edge portion adjacent to a first sidewall of the device isolation layer, a second edge portion adjacent to a second sidewall of the device isolation layer, and a center portion between the first and second edge portions, and the first edge portion has a first thickness, and the second edge portion has a second thickness smaller than the first thickness.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: Semiconductor devices may include an active fin extending on a substrate in a first direction and including a recess opening both sides located in the first direction, a source region and a drain region respectively adjacent opposing ends of the active fin, a gate electrode traversing the active fin in the second direction, perpendicular to the first direction, on an upper surface of the recess of the active fin, and extending to a side region, adjacent to the recess, and a gate insulating layer between the active fin and the gate electrode. In some embodiments, the first recess may extend through the first active fin in a width direction thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: Provided herein are methods and devices for measuring pH and for amplifying a pH signal to obtain ultrasensitive detection of changes in pH. This is achieved by providing a sensor and a transducer, wherein the sensor transconductance is sensitive to changes in pH and the transducer transconductance is not affected by pH change. The transducer instead compensates for changes in the sensor transconductance arising from pH change. The unique configuration of the sensor and transducer with respect to each other provides substantial increases in a pH amplification factor, thereby providing pH sensing devices with a giant Nernst response and, therefore, effectively increased pH sensitivity.

Abstract: Provided herein are methods and devices for measuring pH and for amplifying a pH signal to obtain ultrasensitive detection of changes in pH. This is achieved by providing a sensor and a transducer, wherein the sensor transconductance is sensitive to changes in pH and the transducer transconductance is not affected by pH change. The transducer instead compensates for changes in the sensor transconductance arising from pH change. The unique configuration of the sensor and transducer with respect to each other provides substantial increases in a pH amplification factor, thereby providing pH sensing devices with a giant Nernst response and, therefore, effectively increased pH sensitivity.