Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Abstract: Provided is a preparation method for a cyclohexane dimethanol (CHDM), which can have a high trans content through particular conditions, additive addition, or reactant addition, which is controlled in a cyclohexane dicarboxylic acid (CHDA) hydrogenation reaction, and a cyclohexane dimethanol prepared thereby.

Abstract: Provided is a preparation method for a cyclohexane dimethanol (CHDM), which can have a high trans content through particular conditions, additive addition, or reactant addition, which is controlled in a cyclohexane dicarboxylic acid (CHDA) hydrogenation reaction, and a cyclohexane dimethanol prepared thereby.

Abstract: The present invention relates to a gas distribution unit for a fluidized bed reactor system, a fluidized bed reactor system having the gas distribution unit, and a method for preparing granular polysilicon using the fluidized bed reactor system. The gas distribution unit for a fluidized bed reactor system according to the present invention enables gas flow rate control and gas composition control for each zone within the plenum chamber. In addition, a fluidized bed reactor system having the gas distribution unit enables shape control of a fluidized bed (in particular, transition between a bubbling fluidized bed and a spout fluidized bed). The method for preparing granular polysilicon using the fluidized bed reactor system not only simultaneously improves process stability and productivity, but also enables more flexible handling in the event of an abnormal situation.

Abstract: A method for preparing trichlorosilane according to an embodiment of the present invention comprises the steps of: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of metal grade silicon, silicon tetrachloride, and hydrogen in the presence of metal silicide in the reaction unit, to a separation unit, and separating a trichlorosilane component. In cases where a silicon tetrachloride hydrochlorination reaction is performed using the method for preparing trichlorosilane according to the embodiment of the present invention, the yield of trichlorosilane can be raised.

Abstract: The present invention relates to a gas distribution unit for a fluidized bed reactor system, a fluidized bed reactor system having the gas distribution unit, and a method for preparing granular polysilicon using the fluidized bed reactor system. The gas distribution unit for a fluidized bed reactor system according to the present invention enables gas flow rate control and gas composition control for each zone within the plenum chamber. In addition, a fluidized bed reactor system having the gas distribution unit enables shape control of a fluidized bed (in particular, transition between a bubbling fluidized bed and a spout fluidized bed). The method for preparing granular polysilicon using the fluidized bed reactor system not only simultaneously improves process stability and productivity, but also enables more flexible handling in the event of an abnormal situation.

Abstract: Provided is a heat-dissipating paint composition using a carbon material, the heat-dissipating paint composition including a dispersion solution containing a surface treated carbon material, a heat resistance additive, and an adhesion improving emulsion, so that the heat-dissipating paint composition can have excellent heat dissipation performance and can be applied to various industrial field requiring temperature control.

Abstract: Provided area carbon nanotube composite material obtained by treating a mixture including carbon nanotubes, at least one carbon compound other than carbon nanotubes and a dispersion medium under a sub-critical or super-critical condition of 50-400 atm, and a method for producing the same. More particularly, the method for producing a carbon nanotube composite material, includes: introducing a mixture including carbon nanotubes, at least one carbon compound other than carbon nanotubes and a dispersion medium into a preheating unit under a pressure of 1-400 atm to preheat the mixture; treating the preheated mixture under a sub-critical or super-critical condition of 50-400 atm; cooling and depressurizing the resultant product to 0-1000 C and 1-10 atm; and recovering the cooled and depressurized product. Provided also is an apparatus for producing a carbon nanotube composite material in a continuous manner.

Abstract: A method for preparing trichlorosilane according to an embodiment of the present invention comprises the steps of: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of metal grade silicon, silicon tetrachloride, and hydrogen in the presence of metal silicide in the reaction unit, to a separation unit, and separating a trichlorosilane component. In cases where a silicon tetrachloride hydrochlorination reaction is performed using the method for preparing trichlorosilane according to the embodiment of the present invention, the yield of trichlorosilane can be raised.

Abstract: The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode.

Abstract: A three-dimensional (3-D) nonvolatile memory device includes channel layers protruding perpendicular to a surface of a substrate, interlayer insulating layers and conductive layer patterns alternately formed to surround each of the channel layers, a slit formed between the channel layers, the slit penetrating the interlayer insulating layers and the conductive layer patterns, and an etch-stop layer formed on the surface of the substrate at the bottom of the slit.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode.

Abstract: A continuous method for functionalizing a carbon nanotube includes preparing a carbon nanotube solution containing a nitro compound represented by chemical formula 1 as R—(NOx)y wherein R is an alkyl group of C1 to C7 or an aryl group of C6 to C20 and x and y are integers of 1 to 3 independently, a carbon nanotube and a solvent. An oxidizer for forming a nitric acid selected from the group consisting of the carbon nanotube, oxygen, air, ozone, hydrogen peroxide and a mixture thereof is mixed with the carbon nanotube solution at a front end of a functionalizing reactor and the carbon nanotube mixture is fed into the functionalizing reactor. A functionalized carbon nanotube is prepared by treating the carbon nanotube mixture fed into the functionalizing reactor under a subcritical water or supercritical water condition of 50 to 400 atm.

Abstract: Provided is a continuous method and apparatus of purifying carbon nanotubes. The continuous method and apparatus of purifying carbon nanotubes is characterized in a first purifying step for injecting a carbon nanotube liquid mixture containing an oxidizer into a purifying reactor under a sub-critical water or supercritical water condition at a pressure of 50 to 400 atm and a temperature of 100 to 600° C. to obtain a purified product, thereby removing amorphous carbon and producing the carbon nanotube product.

Abstract: A three-dimensional (3-D) nonvolatile memory device includes channel layers protruding perpendicular to a surface of a substrate, interlayer insulating layers and conductive layer patterns alternately formed to surround each of the channel layers, a slit formed between the channel layers, the slit penetrating the interlayer insulating layers and the conductive layer patterns, and an etch-stop layer formed on the surface of the substrate at the bottom of the slit.