Abstract: An organic light emitting diode display includes a pixel having a plurality of sub-pixels. Each of the plurality of sub-pixels includes a first sub-pixel having a first anode and a first organic emission layer, a second sub-pixel having a second anode and a second organic emission layer, and a third sub-pixel having a third anode and a third organic emission layer. The first, second, and third anodes satisfy the following condition: W ? ? 1 + W ? ? 2 < 2 ? W ? ? 3 < 2 3 ? P where W1, W2, and W3 respectively denote the width of the first anode, the width of the second anode, and the width of the third anode measured along a direction traversing the first sub-pixel, the second sub-pixel, and the third sub-pixel and where P denotes a width of the pixel measure along the direction traversing the first sub-pixel, the second sub-pixel, and the third sub-pixel.

Abstract: An OLED display includes a first substrate including a thin film transistor and an organic light emitting element and a second substrate facing the first substrate and having a gully pattern recessed on a surface facing the first substrate. By having the gully pattern on the second substrate, a mechanical strength of the OLED may be improved, and thus, the OLED may minimize the thickness without reducing the mechanical strength.

Abstract: An OLED display includes: a thin film transistor including a gate electrode, a source electrode, and a drain electrode; a planarization layer on the thin film transistor and including a contact hole at least partially exposing the drain electrode; a pixel electrode on the planarization layer and coupled to the drain electrode of the thin film transistor through the contact hole; a pixel defining layer on the planarization layer and having an opening that exposes the pixel electrode; an organic emission layer on the pixel electrode; and a common electrode on the organic emission layer and the pixel defining layer. The pixel defining layer includes a corner-cube pattern facing the common electrode.

Abstract: A deposition mask and a deposition device using the same, the deposition mask including a mask body, a plurality of slits in the mask body, and a plurality of ribs between the slits, wherein the slits include a plurality of deposition slits, and a plurality of dummy slits near the deposition slits.

Abstract: A critical dimension controlling method in a semiconductor production process includes determining whether a model is to undergo a discontinuous production process when a run is inserted in a semiconductor manufacturing line, applying an offset for said model or a common offset for a model group including said model according to the determination, executing a production process in dependence upon a process variation along with the offset for the model or the common offset for the model group, and measuring an actual critical dimension in the production process. The offset for the model is calculated based on a previously measured actual critical dimension, and the calculated offset for the model is applied to the calculation of the common offset for the model group.

Abstract: An organic light emitting diode (OLED) display including a substrate, a thin film transistor (TFT) formed on the substrate, an OLED, a colored polarizing member on the OLED, and a colored material on the OLED and having a color that is different from that of the polarizing member. The OLED includes a pixel electrode, an organic emission layer on the pixel electrode, and a common electrode on the organic emission layer, wherein the pixel electrode is coupled to the TFT.

Abstract: A virtual measuring device and a method for measuring the deposition thickness of amorphous silicon being deposited on a substrate is disclosed, where the method of measuring the deposition thickness of amorphous silicon includes predicting and adapting operations. In the predicting operation, during a process of depositing the amorphous silicon to a substrate, the deposition thickness is predicted by multiplying a predicted deposition speed to a deposition time by using a prediction model expressing a relationship between a deposition speed and a plurality of process factors that are correlated with the deposition speed obtained from the deposition thickness and the deposition time, and the predicted deposition thickness is compared with the measured deposition thickness, so that the relationship between the plurality of process factors and the deposition speed in the prediction model is compensated according to the comparison difference.

Abstract: A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer. The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.

Abstract: An organic light emitting diode display includes a substrate, a thin film transistor on the substrate and including a gate electrode, a source electrode, and a drain electrode, a planarization layer on the thin film transistor and having a contact hole exposing a portion of one of the drain electrode or the source electrode, a pixel electrode on the planarization layer and coupled to the one of the drain electrode or the source electrode through the contact hole, a colored pixel defining layer on the planarization layer and including an opening exposing at least a portion of the pixel electrode, and a colored layer on the pixel electrode and the pixel defining layer and having a chromatic color different from a chromatic color of the pixel defining layer.

Abstract: An organic light emitting diode display includes a substrate member, a plurality of pixel electrodes formed on the substrate member, an organic emission layer formed on the pixel electrodes, and a first common electrode formed on the organic emission. A transmitting layer may be formed on the first common electrode and is configured to be substantially antireflective. A second common electrode may be formed on the transmitting layer and the first common electrode is electrically connected with the second common electrode.

Abstract: The present invention relates to an organic light emitting diode (OLED) display and a manufacturing method thereof. The OLED display includes a substrate member that includes a plurality of pixel areas. A thin film transistor (TFT) is formed on the substrate member and includes a gate electrode, a source electrode, and a drain electrode. A planarization layer is formed on the TFT and includes a contact hole through which the drain electrode is partially exposed. A pixel electrode is formed on the planarization layer and is connected to the drain electrode of the TFT through the contact hole. A pixel defining layer is formed on the planarization layer and has a through opening. Light scattering spacers are formed on the pixel defining layer to scatter reflected light and may have various shapes and dimensions.

Abstract: An organic light emitting diode (OLED) display is provided. The OLED display includes: a substrate member; an OLED that includes a pixel electrode that is formed on the substrate member, an organic light emitting layer that is formed on the pixel electrode, and a transflective common electrode that is formed on the organic light emitting layer; an encapsulation thin film that is formed on the transflective common electrode; and a touch panel that includes a first touch conductive layer that is formed on the encapsulation thin film and that is formed with a transflective metal film, a glass substrate that is formed on the first touch conductive layer, and a second touch conductive layer that is formed on the glass substrate. In some embodiments, the transflective common electrode has reflectivity of less than 50%. Some of the external light is thus reflected again to the first touch conductive layer and back to the transflective common electrode and so on.

Abstract: The present invention relates to an OLED display, and an OLED display according to an exemplary embodiment of the present invention includes a substrate member, an OLED including a first electrode formed on the substrate member, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer, and a cover layer formed on the second electrode and covering the OLED. The cover layer includes a cover main body and a corner-cube pattern formed on an opposite side of a side that faces the second electrode among both sides of the cover main body.

Abstract: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes i) an OLED comprising i) a first electrode, ii) an organic emission layer formed on the first electrode, and iii) a second electrode formed on the organic emission layer, ii) a dual brightness enhancement film (DBEF) formed over the second electrode of the OLED, iii) a first polarizing plate formed on the DBEF, iv) a cholesteric liquid crystal (CLC) layer formed on the first polarizing plate, v) a phase delay plate that is a ¼ wavelength plate formed on the CLC layer and vi) a second polarizing plate formed on the phase delay plate.

Abstract: A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.

Abstract: An OLED display includes a first substrate including a thin film transistor and an OLED, and a second substrate on the first substrate and including a corner-cube pattern facing the first substrate.

Abstract: An organic light emitting diode display is disclosed. In one embodiment, the display includes 1) an organic light emitting diode comprising i) a pixel electrode, ii) an organic emission layer formed on the pixel electrode, and iii) a common electrode formed on the organic emission layer, 2) a dual brightness enhancement film formed over the common electrode of the organic light emitting diode, 3) a first phase delaying plate formed on the dual brightness enhancement film, 4) a corner cube film formed on the first phase delaying plate, 5) a second phase delaying plate formed on the corner cube film and a 6) polarizing plate formed on the second phase delaying plate, wherein at least one of the elements 2)-5) is configured to reduce reflection of external light incident onto the polarizing plate and/or reduce the loss of light emitted from the organic emission layer before outputting the emitted light through the polarizing plate.

Abstract: The present invention relates to an OLED display. In some embodiments, the OLED display may employ combinations of linear polarization, circular or elliptical polarization, and phase delay in order to suppress reflection from external light while minimizing the loss of emitted light from the OLED display. For example, the OLED in the display includes a stack having a first electrode, an organic emission layer, and a second electrode, a DBEF formed on the OLED, a first polarizing plate formed on the DBEF, a second polarizing plate formed on the first polarizing plate, and a plurality of phase delay plates formed between the first polarizing plate and the second polarizing plate.

Abstract: An OLED display includes a pixel electrode on a substrate, an organic emission layer on the pixel electrode, a first common electrode on the organic emission layer, a transmission layer on the first common electrode, a second common electrode on the transmission layer, a selective reflective layer on the second common electrode, a polarizing plate on the selective reflective layer, and a phase delay plate between the polarizing plate and the second common electrode.

Abstract: An OLED display includes a substrate member, a plurality of pixel electrodes on the substrate member, a pixel defining layer on the substrate member, the pixel defining layer including a pixel defining part and a plurality of light scattering spacer parts, the pixel defining part including a plurality of openings corresponding to and exposing the pixel electrodes, and the light scattering spacer parts protruding upward from the pixel defining part away from the substrate member, an organic light emitting layer on the pixel electrodes, a first common electrode on the organic light emitting layer, at least a portion of the first common electrode being on the pixel defining layer to overlap the light scattering spacer parts, a transmissive film on the first common electrode, and a second common electrode on the transmissive film.