Abstract: A photosensitive resin composition is disclosed. The disclosed photosensitive resin composition includes an acryl-based copolymer formed by copolymerizing i) unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, or a mixture thereof, and ii) an olefin-based unsaturated compound or a mixture thereof, a dissolution inhibitor in which a phenolic hydroxyl group is protected by an acid-degradable acetal or ketal group, a photoacid generator, and a solvent.

Abstract: A photosensitive resin composition is disclosed. The disclosed photosensitive resin composition includes an acryl-based copolymer formed by copolymerizing i) unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, or a mixture thereof, and ii) an olefin-based unsaturated compound or a mixture thereof, a dissolution inhibitor in which a phenolic hydroxyl group is protected by an acid-degradable acetal or ketal group, a photoacid generator, and a solvent.

Abstract: The present invention relates to a photosensitive resin composition, particularly to a photosensitive resin composition for forming an interlayer organic insulating film for TFT-LCD, comprising 0.01 to 20 wt % of UV stabilizer or radical scavenger. The photosensitive resin composition of the present invention can be used for forming an interlayer organic insulating film for TFT-LCD to improve active unfilled area upon over exposure in liquid crystal photo-alignment process, can easily control resolution of pattern, and is particularly suitable for forming a planarization layer of an interlayer organic insulating film.

Abstract: A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.

Abstract: The present invention relates to a photosensitive resin composition, particularly to a photosensitive resin composition for forming an interlayer organic insulating film for TFT-LCD, comprising 0.01 to 20 wt % of UV stabilizer or radical scavenger. The photosensitive resin composition of the present invention can be used for forming an interlayer organic insulating film for TFT-LCD to improve active unfilled area upon over exposure in liquid crystal photo-alignment process, can easily control resolution of pattern, and is particularly suitable for forming a planarization layer of an interlayer organic insulating film.

Abstract: A photoresist composition capable of forming a high resolution pattern without an additional heating process includes an alkali-soluble phenol polymer in an amount of 10 to 70 parts by weight, including at least one unit of Formula 1, a photo-acid generator in an amount of 0.5 to 10 parts by weight, a dissolution inhibitor in an amount of 5 to 50 parts by weight, including at least one unit of Formula 2, and a solvent in an amount of 10 to 90 parts by weight, wherein the amounts of the foregoing components is based on a total of 100 parts by weight of alkali-soluble phenol polymer, photo-acid generator, dissolution inhibitor, and solvent, and wherein Formulas 1 and 2 have the structures: wherein R is a methyl group, wherein R1, R2 and R3 are the same or different and are hydrogen or t-butyl vinyl ether protective groups.

Abstract: A photoresist composition capable of forming a high resolution pattern without an additional heating process includes an alkali-soluble phenol polymer in an amount of 10 to 70 parts by weight, including at least one unit of Formula 1, a photo-acid generator in an amount of 0.5 to 10 parts by weight, a dissolution inhibitor in an amount of 5 to 50 parts by weight, including at least one unit of Formula 2, and a solvent in an amount of 10 to 90 parts by weight, wherein the amounts of the foregoing components is based on a total of 100 parts by weight of alkali-soluble phenol polymer, photo-acid generator, dissolution inhibitor, and solvent, and wherein Formulas 1 and 2 have the structures: wherein R is a methyl group, wherein R1, R2 and R3 are the same or different and are hydrogen or t-butyl vinyl ether protective groups.

Abstract: A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.