Abstract: An organic electroluminescence device comprises a plurality of Pixel Defining Layers (PDLs) formed on a substrate, first electrodes formed in a space that is defined by the substrate and the PDLs, white light emitting layers formed in a space that is defined by the first electrodes and the PDLs, a second electrode formed on the white light emitting layers, first black matrices formed on the second electrode, and a color filter layer located adjacent to the first black matrices and spaced apart from the first black matrices.

Abstract: An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.

Abstract: Provided is a display device, including: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an outer boundary of a pixel area; a transistor connected to the signal line; a first electrode extending across the pixel area and formed on the signal line and the transistor, and connected to the transistor, the first electrode having a first portion overlying only the signal line and the transistor, and a second portion comprising all of the first electrode not included in the first portion; a pixel defining layer formed on only the first portion of the first electrode; an organic emission layer formed on substantially the entire second portion but not on the first portion; and a second electrode formed on the pixel defining layer and the organic emission layer.

Abstract: An organic light emitting-diode (OLED) display is disclosed. In one aspect, the OLED includes a first substrate, a first electrode provided on the first substrate, a pixel defining layer provided on the first electrode and including a first opening exposing at least a portion of the first electrode, and an organic emission layer provided on the first electrode corresponding to the first opening. The OLED display also includes a second electrode provided on the pixel defining layer and the organic emission layer, a second substrate provided on the second electrode, and a first auxiliary electrode provided below the second substrate facing the second electrode and welded to a portion of the second electrode corresponding to the pixel defining layer.

Abstract: A display device and method of manufacturing the same, the display device having a substrate, a plurality of scattering patterns which are located on the substrate and comprise crystallized metal oxide, a first electrode which is located on the scattering patterns, an organic light-emitting layer which is located on the first electrode, and a second electrode which is located on the organic light-emitting layer.

Abstract: Provided is a display device, including: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an outer boundary of a pixel area; a transistor connected to the signal line; a first electrode extending across the pixel area and formed on the signal line and the transistor, and connected to the transistor, the first electrode having a first portion overlying only the signal line and the transistor, and a second portion comprising all of the first electrode not included in the first portion; a pixel defining layer formed on only the first portion of the first electrode; an organic emission layer formed on substantially the entire second portion but not on the first portion; and a second electrode formed on the pixel defining layer and the organic emission layer.

Abstract: An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.

Abstract: The embodiment relates to a display device having an improved aperture ratio and capacitance, and a fabrication method of the display device, in which the display device may include a thin film transistor, which includes: an active layer, a gate electrode, a source electrode electrically connected to the active layer, a drain electrode electrically connected to the active layer, and a gate insulating material formed between the active layer and the gate electrode, where the gate insulating material includes a first layer, a second layer and a third layer, where the second layer has a thickness between about 0.1 to about 1.5 times a thickness of the first layer, and where the third layer has a thickness between about 2 to about 12 times the thickness of the second layer.

Abstract: A light emitting display device includes: a substrate; a first electrode disposed on the substrate in each pixel area; an insulating film disposed on the substrate, where a first opening, which exposes the first electrode, is defined in the insulating film; a blocking film disposed on a side surface of the insulating film, which defines the first opening; a light emitting layer disposed in the first opening and on the first electrode, where the light emitting layer is in contact with the blocking film; and a second electrode disposed on the light emitting layer.

Abstract: Disclosed is an organic light-emitting display apparatus. The organic light-emitting display apparatus includes a pixel electrode that is connected to at least one thin film transistor, an opposite electrode that is disposed to face the pixel electrode, an organic light emitting layer that is disposed between the pixel electrode and the opposite electrode, and a pad electrode that includes a first pad layer, a second pad layer disposed on the first pad layer, and a third pad layer which is disposed between the first pad layer and the second pad layer and contains a material having a reducibility that is lower than a reducibility of a material contained in the second pad layer.

Abstract: A display device and method of manufacturing the same, the display device having a substrate, a plurality of scattering patterns which are located on the substrate and comprise crystallized metal oxide, a first electrode which is located on the scattering patterns, an organic light-emitting layer which is located on the first electrode, and a second electrode which is located on the organic light-emitting layer.

Abstract: An organic light emitting-diode (OLED) display is disclosed. In one aspect, the OLED includes a first substrate, a first electrode provided on the first substrate, a pixel defining layer provided on the first electrode and including a first opening exposing at least a portion of the first electrode, and an organic emission layer provided on the first electrode corresponding to the first opening. The OLED display also includes a second electrode provided on the pixel defining layer and the organic emission layer, a second substrate provided on the second electrode, and a first auxiliary electrode provided below the second substrate facing the second electrode and welded to a portion of the second electrode corresponding to the pixel defining layer.

Abstract: Embodiments are directed to an organic light emitting display device, including a substrate, and a plurality of pixels, each pixel including a protrusion pattern and a trench area formed in the substrate, an organic light emitting device disposed on the substrate, a capacitor, the capacitor including a first capacitor electrode and a second capacitor electrode, a first transistor, the first transistor being coupled to a gate line extended in a row direction, a data line extended in a column direction crossing the row direction, and the first capacitor electrode, and a second transistor, the second transistor being coupled to the first capacitor electrode, a voltage line extended in the column direction, and the organic light emitting device, wherein the second capacitor electrode is branched from the voltage line, and the gate line and the first capacitor electrode are formed on and overlap the protrusion pattern.

Abstract: Provided is a display device, including: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an outer boundary of a pixel area; a transistor connected to the signal line; a first electrode extending across the pixel area and formed on the signal line and the transistor, and connected to the transistor, the first electrode having a first portion overlying only the signal line and the transistor, and a second portion comprising all of the first electrode not included in the first portion; a pixel defining layer formed on only the first portion of the first electrode; an organic emission layer formed on substantially the entire second portion but not on the first portion; and a second electrode formed on the pixel defining layer and the organic emission layer.

Abstract: A light emitting display device includes: a substrate; a first electrode disposed on the substrate in each pixel area; an insulating film disposed on the substrate, where a first opening, which exposes the first electrode, is defined in the insulating film; a blocking film disposed on a side surface of the insulating film, which defines the first opening; a light emitting layer disposed in the first opening and on the first electrode, where the light emitting layer is in contact with the blocking film; and a second electrode disposed on the light emitting layer.

Abstract: In an aspect, a display device including: a substrate; a thin film transistor formed on the substrate, and comprising an active layer formed of an oxide semiconductor; a passivation layer formed on the thin film transistor; and a hydrogen blocking layer positioned between the active layer and the passivation layer is provided.

Abstract: A flat panel display apparatus including a gate electrode on a substrate, a first insulating layer and a semiconductor layer sequentially stacked on the gate electrode and including a transparent conductive oxide, a capacitor first electrode extending on a plane on which the gate electrode extends, and a capacitor second electrode extending on a plane on which the semiconductor layer extends and including a material of the semiconductor layer, wherein the first insulating layer is between the capacitor second electrode and the semiconductor layer, source and drain electrodes that are separated by a second insulating layer and are connected to the semiconductor layer and the capacitor second electrode, a third insulating layer covering the source and drain electrodes, and a pixel electrode electrically connected to the source or drain electrode on the third insulating layer and being electrically connected to one of the source electrode and/or the drain electrode.

Abstract: An organic electroluminescence device comprises a plurality of Pixel Defining Layers (PDLs) formed on a substrate, first electrodes formed in a space that is defined by the substrate and the PDLs, white light emitting layers formed in a space that is defined by the first electrodes and the PDLs, a second electrode formed on the white light emitting layers, first black matrices formed on the second electrode, and a color filter layer located adjacent to the first black matrices and spaced apart from the first black matrices.

Abstract: A method of manufacturing a thin film transistor (TFT), including forming an oxide semiconductor pattern including a first region, a second region and a third region on a substrate, directly plasma processing the first region and the second region of the oxide semiconductor pattern, forming an insulating layer on the substrate to cover the oxide semiconductor pattern, forming a gate electrode on the insulating layer to overlap the third region, and forming a source electrode and a drain electrode that are insulated from the gate electrode and that contact the first region, the second region being disposed between the first region and the third region.

Abstract: In an aspect, a display device including: a substrate; a thin film transistor formed on the substrate, and comprising an active layer formed of an oxide semiconductor; a passivation layer formed on the thin film transistor; and a hydrogen blocking layer positioned between the active layer and the passivation layer is provided.