Abstract: A multiple laundry machine capable of separately washing a small amount of laundry is disclosed. The disclosed multiple laundry machine includes a casing, and a plurality of laundry machines arranged in the casing, to conduct washing operations in different manners, respectively.

Abstract: A laundry treating machine is disclosed. The laundry treating machine includes a case having a laundry receiving space for receiving laundry defined therein, the case being located above another laundry treating machine, a hot air supply unit for supplying hot air into the laundry receiving space, a manipulation part for allowing a user to select a drive course, a control unit for controlling the hot air supply unit to be driven according to the course selected by the manipulation part, and a guide unit for assisting the user to put the laundry in the laundry receiving space.

Abstract: A washing machine is disclosed. A washing machine includes a case, a tub mounted in the case to hold wash water, a hanger provided in a front upper portion of the tub to hang laundry thereon, and a driving unit to reciprocate the hanger with the laundry in a predetermined direction within the tub. According to the washing machine mentioned above, the laundry is washed only by using the reciprocating motion. As a result, the laundry may not be entangled and fabric of the laundry may not damage.

Abstract: A clothes treating system having a laundry storage device and a clothes treating method are disclosed. The clothes treating system includes a laundry storage device having a plurality of storage boxes to sort and store laundry according to a laundry type, and a clothes treating apparatus to perform a washing course upon receiving washing information, related to laundry sorted and stored in each storage box, from the laundry storage device. The clothes treating method includes sorting and introducing clothing into a plurality of storage boxes according to a clothing type, transmitting washing information of the laundry sorted and stored in the respective storage boxes to a clothes treating apparatus, and performing a washing course according to the transmitted washing information.

Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.

Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.

Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.

Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.