Abstract: The present invention relates to a novel 1H-pyrazolopyridine derivative and a pharmaceutical composition containing the same. The 1H-pyrazolopyridine derivative and the pharmaceutical composition containing the same can be usefully used for the prevention or treatment of autoimmune diseases or cancer.

Abstract: An organic light emitting display device may include a display panel, a source driving circuit, and a voltage generator. The display panel may include a pixel circuit including a driving transistor to drive an organic light emitting diode. The driving transistor may have four independent terminals including first and second gate electrodes. The source driving circuit may provide a data voltage to the pixel circuit. The voltage generator may apply an independent bias voltage to the second gate electrode of the driving transistor to control a driving voltage range of the driving transistor.

Abstract: A transistor substrate may include: a substrate; an active pattern formed on the substrate, the active pattern including an oxide semiconductor that contains tin (Sn), and the active pattern including a source region, a drain region, and a channel region that is formed between the source region and the drain region; a source protective pattern formed on the source region; a drain protective pattern formed on the drain region; a gate electrode overlapping at least a portion of the channel region; an insulation interlayer covering the source protective pattern and the drain protective pattern; a source electrode formed on the insulation interlayer, the source electrode being in contact with the source protective pattern through a source contact hole that is formed in the insulation interlayer; and a drain electrode formed on the insulation interlayer, the drain electrode being in contact with the drain protective pattern through a drain contact hole that is formed in the insulation interlayer.

Abstract: A display apparatus including a base substrate, a first thin film transistor disposed on the base substrate, a via insulation layer disposed on the first thin film transistor, and a light emitting structure disposed on the via insulation layer. The first thin film transistor includes a first gate electrode, an oxide semiconductor overlapped with the first gate electrode, and including tin (Sn), an etch stopper disposed on the oxide semiconductor and including an oxide semiconductor material which does not include tin (Sn), a first source electrode making contact with the oxide semiconductor, and a first drain electrode making contact with the oxide semiconductor, and spaced apart from the first source electrode.

Abstract: A display device includes: a substrate including a display area and a non-display area; a gate driver disposed on the substrate in the non-display area and including a plurality of stages that generate a gate signal and output the gate signal to the display area; a switching transistor and a driving transistor disposed on the substrate in the display area; and a light emitting diode connected to the driving transistor, wherein each of the plurality of stages may include a plurality of transistors, wherein a channel layer of the driving transistor includes a first oxide semiconductor material, and a channel layer of the plurality of transistors included in each of the plurality of stages includes a second oxide semiconductor material, wherein the first oxide semiconductor material is different from the second oxide semiconductor material, and wherein the second oxide semiconductor material may include tin.

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

Abstract: An organic light emitting diode display device includes a substrate, a first oxide transistor, a second oxide transistor, and a sub-pixel structure. The substrate has a display region including a plurality of sub-pixel regions and a peripheral region located in a side of the display region. The first oxide transistor is disposed in the peripheral region on the substrate, and includes a first oxide semiconductor pattern that includes tin (Sn). The second oxide transistor is disposed in the sub-pixel regions each on the substrate, and includes a second oxide semiconductor pattern. The sub-pixel structure is disposed on the second oxide transistor.

Abstract: The present invention relates to 4-aminopyrazolo[3,4-d]pyrimidinylazabicyclo derivatives and pharmaceutical compositions containing the same, wherein the 4-aminopyrazolo[3,4-d]pyrimidinylazabicyclo derivatives and pharmaceutical compositions containing them not only have BTK inhibitory activity but also has remarkably high selectivity for the inhibitory activity of BTK vs. ITK, and thereby can be usefully used for the prevention or treatment of autoimmune diseases or cancers as BTK inhibitors.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.

Abstract: The present invention relates to 4-aminopyrazolo[3,4-d]pyrimidinylazabicyclo derivatives and pharmaceutical compositions containing the same, wherein the 4-aminopyrazolo[3,4-d]pyrimidinylazabicyclo derivatives and pharmaceutical compositions containing them not only have BTK inhibitory activity but also has remarkably high selectivity for the inhibitory activity of BTK vs. ITK, and thereby can be usefully used for the prevention or treatment of autoimmune diseases or cancers as BTK inhibitors.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.

Abstract: The present invention relates to a compound represented by chemical formula 1, which can be used for the prevention and treatment of diseases caused by abnormality in a prolyl-tRNA synthetase (PRS) activity, or a pharmaceutically acceptable salt thereof, a method for preparing the same, and a pharmaceutical composition comprising the same.

Abstract: The present invention relates to a heterocyclic compound having a novel structure that can be used in the prevention or treatment of diseases caused by abnormality in a PRS (prolyl-tRNA synthetase) activity, a method for preparing the same, and a pharmaceutical composition comprising the same.

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

Abstract: The present invention relates to a heterocyclic compound having a novel structure that can be used in the prevention or treatment of diseases caused by abnormality in a PRS (prolyl-tRNA synthetase) activity, a method for preparing the same, and a pharmaceutical composition comprising the same.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.

Abstract: The present invention relates to novel oxodihydropyridinecarbohydrazide derivatives with excellent antifungal activities, an antifungal composition containing the same, and its use for the prevention and treatment of fungal infectious diseases. The oxodihydropyridinecarbohydrazide derivatives of the present invention have excellent antifungal and fungicidal activities, and thus will be useful for the prevention and treatment of various fungal infections by Candida spp., Aspergillus spp., Cryptococcus neoformans and Trichophyton spp., etc. Additionally, the oxodihydropyridinecarbohydrazide derivatives of the present invention, unlike other fungicidal preparations, can be orally administered.

Abstract: The present invention relates to a compound represented by chemical formula 1, which can be used for the prevention and treatment of diseases caused by abnormality in a prolyl-tRNA synthetase (PRS) activity, or a pharmaceutically acceptable salt thereof, a method for preparing the same, and a pharmaceutical composition comprising the same.

Abstract: A thin film transistor includes: a lower gate electrode on a substrate; a gate insulating layer on the lower gate electrode; a first semiconductor layer on the gate insulating layer; a source electrode on the first semiconductor layer, a drain electrode on the first semiconductor layer and spaced apart form the source electrode; a second semiconductor layer on a channel region of the first semiconductor layer and on the source electrode and the drain electrode; a passivation layer on the second semiconductor layer; and an upper gate electrode disposed on the passivation layer, corresponding to the channel region.