Patents by Inventor Joong Hyeok Byeon

Joong Hyeok Byeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ESD protection SCR device
    Patent number: 9991369
    Abstract: An ESD protection SCR device includes a semiconductor substrate, an epitaxial layer, device isolation layers, an n-type well formed in an anode region, a first high concentration p-type impurity region formed on a surface portion of the n-type well, a first high concentration n-type impurity region formed on the surface portion of the n-type well, a p-type well formed in an cathode region, a second high concentration n-type impurity region formed on a surface portion of the p-type well, a second high concentration p-type impurity region formed on a surface portion of the p-type well so as to be spaced apart from the second high concentration n-type impurity region, and a third high-concentration p-type impurity region formed on the surface portion of the p-type well so as to surround a side portion of the second high-concentration n-type impurity region, adjacent to the anode region.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: June 5, 2018
    Assignee: DONGBU HITEK CO., LTD
    Inventors: Seok Soon Noh, Jong Min Kim, Joon Tae Jang, Joong Hyeok Byeon
  • ESD PROTECTION SCR DEVICE
    Publication number: 20180069111
    Abstract: An ESD protection SCR device includes a semiconductor substrate, an epitaxial layer, device isolation layers, an n-type well formed in an anode region, a first high concentration p-type impurity region formed on a surface portion of the n-type well, a first high concentration n-type impurity region formed on the surface portion of the n-type well, a p-type well formed in an cathode region, a second high concentration n-type impurity region formed on a surface portion of the p-type well, a second high concentration p-type impurity region formed on a surface portion of the p-type well so as to be spaced apart from the second high concentration n-type impurity region, and a third high-concentration p-type impurity region formed on the surface portion of the p-type well so as to surround a side portion of the second high-concentration n-type impurity region, adjacent to the anode region.
    Type: Application
    Filed: September 5, 2017
    Publication date: March 8, 2018
    Inventors: Seok Soon Noh, Jong Min Kim, Joon Tae Jang, Joong Hyeok Byeon