Patents by Inventor Joong Jin Nam
Joong Jin Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11342643Abstract: A radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the second conductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourth conductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.Type: GrantFiled: July 23, 2020Date of Patent: May 24, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Joong Jin Nam, Kyu Bum Han, Jae Soon Lee, Young Kyoon Im
-
Patent number: 11316250Abstract: A chip antenna is provided. The chip antenna includes a first dielectric layer; a second dielectric layer disposed on an upper surface of the first dielectric layer; a patch antenna pattern disposed in the second dielectric layer; first and second feed vias disposed to penetrate through at least one of the first and second dielectric layers, respectively and electrically connected to a corresponding feed point among different first and second feed points of the patch antenna pattern; and first and second filters disposed between the first and second dielectric layers, respectively and electrically connected to a corresponding feed via among the first and second feed vias.Type: GrantFiled: September 16, 2020Date of Patent: April 26, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sung Yong An, Joong Jin Nam, Jae Yeong Kim
-
Publication number: 20210384609Abstract: A chip antenna is provided. The chip antenna includes a first dielectric layer; a second dielectric layer disposed on an upper surface of the first dielectric layer; a patch antenna pattern disposed in the second dielectric layer; first and second feed vias disposed to penetrate through at least one of the first and second dielectric layers, respectively and electrically connected to a corresponding feed point among different first and second feed points of the patch antenna pattern; and first and second filters disposed between the first and second dielectric layers, respectively and electrically connected to a corresponding feed via among the first and second feed vias.Type: ApplicationFiled: September 16, 2020Publication date: December 9, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Sung Yong AN, Joong Jin NAM, Jae Yeong KIM
-
Patent number: 10985441Abstract: A radio frequency filter module includes: an antenna package including patch antennas and having first and second frequency passbands different from each other; an integrated circuit (IC) package including an IC; and a connecting member disposed between the antenna package and the IC package, and having a laminated structure configured to electrically connect the patch antennas and the IC to each other. The connecting member includes: a first radio frequency filter pattern having the first and second frequency passbands, and including a first port electrically connected to the IC and a second port electrically connected to at least one of the patch antennas; and a second radio frequency filter pattern having the first and second frequency passbands, and including a third port electrically connected to the IC and a fourth port electrically connected to at least another one of the patch antennas.Type: GrantFiled: July 10, 2019Date of Patent: April 20, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Young Kyoon Im, Joong Jin Nam
-
Publication number: 20200358158Abstract: A radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the second conductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourth conductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.Type: ApplicationFiled: July 23, 2020Publication date: November 12, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Joong Jin NAM, Kyu Bum HAN, Jae Soon LEE, Young Kyoon IM
-
Patent number: 10804581Abstract: A radio frequency filter apparatus includes: radio frequency filters each having a first ring-type pattern extended from a respective first port and a second ring-type pattern extended from a respective second port; a cover ground layer disposed on or below the radio frequency filters and disposed to cover at least a portion of each of the radio frequency filters; and a surrounding ground layer disposed to surround at least a portion of each of the radio frequency filters along outer boundaries of the radio frequency filters, wherein the surrounding ground layer is spaced apart from radio frequency filters such that a shortest distance between the radio frequency filters and the surrounding ground layer is 8/5 or more times a shortest distance between the radio frequency filters and the cover ground layer.Type: GrantFiled: February 4, 2019Date of Patent: October 13, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventor: Joong Jin Nam
-
Patent number: 10763563Abstract: A radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the second conductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourth conductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.Type: GrantFiled: October 31, 2018Date of Patent: September 1, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Joong Jin Nam, Kyu Bum Han, Jae Soon Lee, Young Kyoon Im
-
Publication number: 20200203801Abstract: A radio frequency filter module includes: an antenna package including patch antennas and having first and second frequency passbands different from each other; an integrated circuit (IC) package including an IC; and a connecting member disposed between the antenna package and the IC package, and having a laminated structure configured to electrically connect the patch antennas and the IC to each other. The connecting member includes: a first radio frequency filter pattern having the first and second frequency passbands, and including a first port electrically connected to the IC and a second port electrically connected to at least one of the patch antennas; and a second radio frequency filter pattern having the first and second frequency passbands, and including a third port electrically connected to the IC and a fourth port electrically connected to at least another one of the patch antennas.Type: ApplicationFiled: July 10, 2019Publication date: June 25, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Young Kyoon IM, Joong Jin NAM
-
Publication number: 20200076031Abstract: A radio frequency filter apparatus includes: radio frequency filters each having a first ring-type pattern extended from a respective first port and a second ring-type pattern extended from a respective second port; a cover ground layer disposed on or below the radio frequency filters and disposed to cover at least a portion of each of the radio frequency filters; and a surrounding ground layer disposed to surround at least a portion of each of the radio frequency filters along outer boundaries of the radio frequency filters, wherein the surrounding ground layer is spaced apart from radio frequency filters such that a shortest distance between the radio frequency filters and the surrounding ground layer is 8/5 or more times a shortest distance between the radio frequency filters and the cover ground layer.Type: ApplicationFiled: February 4, 2019Publication date: March 5, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventor: Joong Jin NAM
-
Publication number: 20200007103Abstract: A radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the second conductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourth conductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.Type: ApplicationFiled: October 31, 2018Publication date: January 2, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Joong Jin NAM, Kyu Bum HAN, Jae Soon LEE, Young Kyoon IM
-
Patent number: 9843298Abstract: A power amplifier may include a first amplifying circuit configured to amplify an input RF signal; a second amplifying circuit connected to the first amplifying circuit in parallel configured to amplify the input RF signal; and a controller connected to at least one of the first amplifying circuit and the second amplifying circuit and configured to output a control signal in order to control an on-off state of at least one of the first amplifying circuit and the second amplifying circuit. Such an approach provides high efficiency without adding significant complexity to the power amplifier.Type: GrantFiled: January 8, 2016Date of Patent: December 12, 2017Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Joong Jin Nam, Suk Chan Kang, Kwang Du Lee, Jae Hyouck Choi, Kyung Hee Hong, Kyu Jin Choi, Jeong Hoon Kim
-
Patent number: 9577583Abstract: A power amplifier may include a first amplifying unit receiving a first bias signal to amplify a power level of an input signal; an envelope detecting unit detecting an envelope of the input signal; a comparing circuit unit comparing a peak value of the detected envelope with a preset reference voltage; and a second amplifying unit amplifying the power level of the input signal according to a second bias signal set depending on a comparison result of the comparing circuit unit.Type: GrantFiled: May 8, 2014Date of Patent: February 21, 2017Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kwang Du Lee, Jeong Hoon Kim, Ho Kwon Yoon, Joong Jin Nam, Kyu Jin Choi, Suk Chan Kang, Jae Hyouck Choi, Kyung Hee Hong
-
Publication number: 20160276980Abstract: A power amplifier may include a first amplifying circuit configured to amplify an input RF signal; a second amplifying circuit connected to the first amplifying circuit in parallel configured to amplify the input RF signal; and a controller connected to at least one of the first amplifying circuit and the second amplifying circuit and configured to output a control signal in order to control an on-off state of at least one of the first amplifying circuit and the second amplifying circuit. Such an approach provides high efficiency without adding significant complexity to the power amplifier.Type: ApplicationFiled: January 8, 2016Publication date: September 22, 2016Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Joong Jin NAM, Suk Chan KANG, Kwang Du LEE, Jae Hyouck CHOI, Kyung Hee HONG, Kyu Jin CHOI, Jeong Hoon KIM
-
Publication number: 20150348700Abstract: There are provided an on-chip inductor, and a method for manufacturing the same. The on-chip inductor may include: a substrate; an oxide layer formed on the substrate; a spiral-shaped wiring layer formed on the oxide layer; and a shielding layer having a lattice shape interposed between the substrate and the wiring layer.Type: ApplicationFiled: September 9, 2014Publication date: December 3, 2015Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Kyung Hee HONG, Jeong Hoon KIM, Suk Chan KANG, Joong Jin NAM, Kyu Jin Choi, Jae Hyouck Choi
-
Patent number: 9124353Abstract: A switching circuit may include: the switching circuit includes a switching circuit unit including a first transistor and a second transistor connected to each other in series, the second transistor receiving a first control signal through a control terminal thereof, and an inverter connected between a control terminal of the first transistor and a first terminal of the first transistor. The inverter receives a second control signal and maintains a gate-source voltage level of the first transistor to a threshold voltage level of the first transistor or less, and levels of the first and second control signals are logically complementary to each other.Type: GrantFiled: April 22, 2014Date of Patent: September 1, 2015Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Suk Chan Kang, Ho Kwon Yoon, Jeong Hoon Kim, Joong Jin Nam, Kyu Jin Choi, Kwang Du Lee, Jae Hyouck Choi, Kyung Hee Hong
-
Publication number: 20150188501Abstract: A power amplifying apparatus may include a first amplifying unit receiving power and amplifying a high frequency signal, a second amplifying unit receiving the power and amplifying the high frequency signal from the first amplifying unit, and a control unit controlling an operation of the first amplifying unit or the second amplifying unit. The first amplifying unit and the control unit are disposed on a complementary metal oxide semiconductor (CMOS) substrate, and the second amplifying unit is disposed on a GaAs substrate.Type: ApplicationFiled: May 8, 2014Publication date: July 2, 2015Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Jae Hyouck CHOI, Jeong Hoon KIM, Suk Chan KANG, Joong Jin NAM, Kyu Jin CHOI, Kwang Du LEE, Kyung Hee HONG
-
Publication number: 20150188600Abstract: A switching circuit may include: the switching circuit includes a switching circuit unit including a first transistor and a second transistor connected to each other in series, the second transistor receiving a first control signal through a control terminal thereof, and an inverter connected between a control terminal of the first transistor and a first terminal of the first transistor. The inverter receives a second control signal and maintains a gate-source voltage level of the first transistor to a threshold voltage level of the first transistor or less, and levels of the first and second control signals are logically complementary to each other.Type: ApplicationFiled: April 22, 2014Publication date: July 2, 2015Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Suk Chan KANG, Ho Kwon YOON, Jeong Hoon KIM, Joong Jin NAM, Kyu Jin CHOI, Kwang Du LEE, Jae Hyouck CHOI, Kyung Hee HONG
-
Publication number: 20150145606Abstract: A power amplifier may include a first amplifying unit receiving a first bias signal to amplify a power level of an input signal; an envelope detecting unit detecting an envelope of the input signal; a comparing circuit unit comparing a peak value of the detected envelope with a preset reference voltage; and a second amplifying unit amplifying the power level of the input signal according to a second bias signal set depending on a comparison result of the comparing circuit unit.Type: ApplicationFiled: May 8, 2014Publication date: May 28, 2015Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Kwang Du LEE, Jeong Hoon KIM, Ho Kwon YOON, Joong Jin NAM, Kyu Jin CHOI, Suk Chan KANG, Jae Hyouck CHOI, Kyung Hee HONG
-
Publication number: 20140117920Abstract: There are provided a motor driving device and method. The motor driving device includes: an operation controlling unit generating a pulse width modulation (PWM) signal for controlling an operation of a motor; a driving controlling unit generating a short pulse signal using the PWM signal transferred from the operation controlling unit; and a power supplying unit supplying power to the motor using the short pulse signal, wherein the driving controlling unit controls the PWM signal depending on a control signal provided from the outside to generate the short pulse signal.Type: ApplicationFiled: September 27, 2013Publication date: May 1, 2014Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventor: Joong Jin NAM
-
Patent number: 8536969Abstract: A transformer having a structure in which first and second substrates are vertically laminated, including: a plurality of input conductive lines disposed on the first substrate along a circumference thereof; a single output conductive line disposed co-planarly with the plurality of input conductive lines, and having one end connected to a ground; and an air bridge including a pair of conductive via holes formed in any one conductive line in an overlapped area in which the input and output conductive lines are intersected with each other to penetrate through the first substrate and a single piece of conductive line connecting the pair of conductive via holes to each other and disposed on the second substrate, thereby preventing a short-circuit between the input and output conductive lines.Type: GrantFiled: September 13, 2011Date of Patent: September 17, 2013Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Joong Jin Nam, Chul Hwan Yoon, Ki Joong Kim, Ju Young Park, Jun Goo Won, Youn Suk Kim