Patents by Inventor Joong S. Jeong

Joong S. Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire
    Patent number: 7928017
    Abstract: A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0?y<1) on a base layer, and forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-y layer.
    Type: Grant
    Filed: March 17, 2008
    Date of Patent: April 19, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-youn Kim, Joong S. Jeong, Eun-ju Bae
  • Complementary metal oxide semiconductor device and method of manufacturing the same
    Publication number: 20090095981
    Abstract: Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. The CMOS device comprises an epi-layer that may be formed on a substrate; a first semiconductor layer and a second semiconductor layer that may be formed on different regions of the epi-layer, respectively; and a PMOS transistor and a NMOS transistor that may be formed on the first and second semiconductor layers, respectively.
    Type: Application
    Filed: March 4, 2008
    Publication date: April 16, 2009
    Inventors: Dong-hun Kang, Sang-moon Lee, Joong S. Jeong, Kwang-hyeon Baik
  • Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire
    Publication number: 20090081854
    Abstract: A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0?y<1) on a base layer, and forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-y layer.
    Type: Application
    Filed: March 17, 2008
    Publication date: March 26, 2009
    Inventors: Jun-youn Kim, Joong S. Jeong, Eun-ju Bae