Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; an electrode layer on the light emitting structure; and a conductive support member on the electrode; wherein the conductive support member includes a center portion and a circumference portion surrounding the center portion, wherein a thickness of the circumference portion is lower than a thickness of the center portion, and wherein an area of a top surface of the electrode layer is larger than an area of a top surface of the second conductive semiconductor layer.

Abstract: Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a conductive support member, a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the conductive support member, and an electrode on the light emitting structure layer. The conductive support member has a curved lateral surface recessed inward.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, an electrode layer, a conductive support member and a first buffer member. The compound semiconductor layers comprise a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. The electrode layer is disposed under the plurality of compound semiconductor layers. The conductive support member is disposed under the electrode layer. The first buffer member is embedded to be spaced apart, in the conductive support member.

Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; an electrode layer on the light emitting structure; and a conductive support member on the electrode; wherein the conductive support member includes a center portion and a circumference portion surrounding the center portion, wherein a thickness of the circumference portion is lower than a thickness of the center portion, and wherein an area of a top surface of the electrode layer is larger than an area of a top surface of the second conductive semiconductor layer.

Abstract: Disclosed is a method of manufacturing a semiconductor light emitting device. The method includes forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate, forming an electrode layer on the light emitting structure, forming a conductive support member on the electrode layer, and planarizing a top surface of the conductive support member.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, an electrode layer, a conductive support member and a first buffer member. The compound semiconductor layers comprise a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. The electrode layer is disposed under the plurality of compound semiconductor layers. The conductive support member is disposed under the electrode layer. The first buffer member is embedded to be spaced apart, in the conductive support member.

Abstract: Disclosed is a method of manufacturing a semiconductor light emitting device. The method includes forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate, forming an electrode layer on the light emitting structure, forming a conductive support member on the electrode layer, and planarizing a top surface of the conductive support member.