Abstract: An electronic device is provided.

Abstract: Collecting the topology and asset information of the virtual generated computer network, converting the topology and asset information into a training data set for training the neural network model, training the neural network model based on the training data set, and training A method and apparatus for predicting an attack vulnerability of a computer network through the step of inferring an attack vulnerability of a target computer network using a neural network model are provided.

Abstract: The present invention relates to a thermoelectric material and, specifically, to a thermoelectric material capable of improving the figure of merit and a preparation method therefor. In the present invention, the thermoelectric material may comprise: a matrix compound having a composition of chemical formula 1 or 2; and particles having a composition of chemical formula 3 dispersed in the matrix compound. (AB2)x(Bi2Se2.7Te0.3)1-x, (CB)x(Bi2Se2.7Te0.3)1-x, DyEz.

Abstract: A calculation method using an efficient one-way function in a zero-knowledge proof, performed by a computing device according to an embodiment of the disclosure includes calculating a second bit stream from one or more first substitution-boxes (S-boxes) by an input based on the first bit stream; calculating a third bit stream by inputting the second bit stream to a processing matrix; and calculating a fourth bit stream from one or more second S-boxes by an input based on the third bit stream.

Abstract: A device including a silicon controlled rectifier including an anode and a cathode; at least one first transistor connected between the anode and a gate of the silicon controlled rectifier; and a second transistor including a source connected to one from among the cathode or the anode, and a drain connected to a body of the at least one first transistor.

Abstract: A device includes a storage device to receive a first power and transfer data, a computing device to receive a second power and perform computations on the data; a storage power manager to generate a storage power demand value from previous operation of the storage device; a computing power manager to generate a computing power demand value from previous operation of the computing device; and a global power manager to generate a storage target power value indicating a next power limit for the storage device and a computing target power value indicating a next power limit for the computing device, from both of the storage and computing power demand values, wherein the storage power manager provides the first power to the storage device based on the storage target power value, and the computing power manager provides the second power to the computing device based on the computing target power value.

Abstract: A storage device includes a non-volatile memory device that includes memory blocks each including one or more memory cells, a combo integrated circuit (IC) that includes a temperature sensor and a memory, and a controller that is connected with the combo IC through first channels and controls the non-volatile memory device to write or read data in or from selected memory cells. When the controller determines that a first event occurs based on temperature data read from the combo IC, the controller records first event data in the memory of the combo IC. In a first operation mode, the combo IC outputs the first event data to the controller through the first channels. In a second operation mode, under control of an external host, the combo IC outputs the first event data to the external host through second channels different from the first channels.

Abstract: An electronic device according to an embodiment comprises: a display; a display-driving integrated circuit (IC) set to apply one or more driving signals to the display; a touch sensor including a plurality of electrodes; and a touch sensor IC configured to check an input position on the touch sensor, wherein the touch sensor IC is configured to: acquire, from the display-driving IC, a first vertical synchronization signal from among the one or more driving signals, provide a plurality of first measurement signals corresponding to a first phase at intervals of a first duration to at least a first portion of electrodes among the plurality of electrodes based on the acquisition of the first vertical synchronization signal, and, after providing the plurality of first measurement signals, provide a plurality of second measurement signals corresponding to a second phase, different from the first phase, at intervals of the first duration to at least a second portion of electrodes among the plurality of electrodes, w

Abstract: Provided is a light extraction substrate disposed on a front portion of an organic light-emitting diode (OLED) to extract light from the OLED. The light extraction substrate includes abase substrate and a light extraction layer disposed on the base substrate. The light extraction layer includes a matrix layer and BaTiO3 light-scattering particles dispersed in the matrix layer. The matrix layer contains a siloxane-based organic-inorganic hybrid material. An organic light-emitting device includes the light extraction substrate and an OLED disposed on the light extraction layer of the light extraction substrate.

Abstract: An operation method of a storage device includes: receiving a write request including an object identifier and data from an external device; performing a hash operation on the data to generate a hash value; determining whether an entry associated with the hash value is empty in a table; storing the data in an area of the storage device corresponding to a physical address and updating the entry to include the physical address and a reference count, when it is determined that the entry is empty; and increasing the reference count included in the entry without performing a store operation associated with the data, when it is determined that the entry is not empty, and an error message is returned to the external device when the entry associated with the hash value is not present in the table.

Abstract: An electro-static discharge protection device includes a substrate that includes a first well that has a first conductive type and a second well that has a second conductive type, and first to eighth diffusion regions formed on the first well and the second well. At least a portion of the diffusion regions formed in the first well are connected to a first electrode, and at least a portion of diffusion regions formed in a second well are connected to a second electrode. The contact between one of diffusion regions formed in the first well and an N well forms a trigger diode. A junction between one of diffusion regions formed in a second well and a P well forms a trigger diode. The trigger diodes are electrically connected to each other.

Abstract: Disclosed herein are a method, apparatus, and storage medium for image encoding/decoding. Selective compression learning of latent representations for variable-rate image compression is used for the method, apparatus, and storage medium. A selective compression method that partially encodes latent representations in a completely generalized manner for deep-learning-based variable-rate image compression is disclosed in embodiments. The methods of the embodiments adaptively determine essential representation elements for compression at different target quality levels.

Abstract: Provided is a diagnostic robot including: a communication interface; and at least one processor configured to: control the communication interface to search for at least one candidate electronic device, select a target electronic device from among the at least one candidate electronic device, and identify a component of the target electronic device on which to perform a fault diagnosis, control the communication interface to transmit information associated with a diagnosis range to the target electronic device, obtain first diagnostic data by performing a first fault diagnosis on a component of the diagnostic robot, control the communication interface to receive, from the target electronic device, second diagnostic data generated from a second fault diagnosis performed on the component of the target electronic device while the target electronic device is positioned at a diagnosis area within the diagnosis range, and identify whether there is an abnormality in the component of the target electronic device base

Abstract: In the embodiments, an aqueous hydrochloric acid solution instead of hydrogen chloride gas and solid triphosgene instead of phosgene gas may be used in the process of preparing a diisocyanate from a diamine through a diamine hydrochloride. In addition, the embodiments provide processes for preparing a diisocyanate composition and an optical lens of higher quality by controlling the water content in the diamine hydrochloride composition for preparing a diisocyanate within a specific range.

Abstract: Disclosed herein are a method, an apparatus and a storage medium for encoding/decoding using a transform-based feature map. An optimal basis vector is extracted from one or more feature maps, and a transform coefficient is acquired through a transform using the basis vector. The basis vector and the transform coefficient may be transmitted through a bitstream. In an embodiment, one or more feature maps are reconstructed using the basis vector and the transform coefficient, which are decoded from the bitstream.

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, select two or more erase units from among a plurality of erase units included in the plurality of memory cells to be allocated to each of the plurality of zones based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, wherein the nonvolatile memory device includes a plurality of memory chips, wherein each memory chip of the plurality of memory chips includes a plurality of memory blocks, wherein each memory block of the plurality of memory b

Abstract: A storage device, including: a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, select two or more erase units from among a plurality of erase units included in the plurality of memory cells to be allocated to each zone of the plurality of zones, fixedly and sequentially manage logical addresses of data to be written in the plurality of zones, and generate at least two map tables for the each zone

Abstract: A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device in response to a request of an external host device, select two or more erase units among a plurality of erase units of the plurality of memory cells to be allocated to each of the plurality of zones based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, wherein the controller includes an internal buffer configured to store first data to be written in a first zone from among the plurality of zones, and wherein the controller is further configured to perform a backup operation for the first data b

Abstract: A storage device, including a nonvolatile memory device including a plurality of memory cells forming a user area and a reserved area; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller includes an internal buffer, wherein the controller is configured to: perform a backup operation by writing first data stored in the internal buffer in a backup erase unit included in the reserved area, and after performing the backup operation adjust a buffering unit of the internal buffer to correspond to a cell type of the backup erase unit.