Abstract: A memory array is provided that includes a first memory level including a plane of first selector material, and a plurality of first memory cells each including a corresponding first magnetic memory element coupled in series with a corresponding first selector element. Each first selector element includes a region of the plane of first selector material.

Abstract: Disclosed herein are magnetic storage media with embedded disconnected circuits, and magnetic storage systems comprising such media. A magnetic storage media comprises a recording layer comprising a storage location, and an embedded disconnected circuit (EDC) configured to assist in at least one of writing to or reading from the storage location in response to a wireless activation signal. A magnetic storage system comprises a signal generator configured to generate a wireless activation signal, a magnetic storage media with a plurality of storage locations, and a write transducer and/or a read receiver. The magnetic storage media has at least one EDC configured to assist in writing to and/or reading from at least one of the plurality of storage locations in response to the wireless activation signal.

Abstract: Disclosed herein are methods of using embedded disconnected circuits (EDC) in magnetic storage media to assist in reading data from and writing data to the magnetic storage media. A wireless activation signal is used to activate an EDC in a magnetic storage media. Once activated, the EDC may assist to record data in and/or read data from one or more memory locations of the magnetic storage media.

Abstract: Disclosed herein are magnetic storage media with embedded disconnected circuits, and magnetic storage systems comprising such media. A magnetic storage media comprises a recording layer comprising a storage location, and an embedded disconnected circuit (EDC) configured to assist in at least one of writing to or reading from the storage location in response to a wireless activation signal. A magnetic storage system comprises a signal generator configured to generate a wireless activation signal, a magnetic storage media with a plurality of storage locations, and a write transducer and/or a read receiver. The magnetic storage media has at least one EDC configured to assist in writing to and/or reading from at least one of the plurality of storage locations in response to the wireless activation signal.

Abstract: A system according to one embodiment includes a pinned layer; a spacer layer above the pinned layer; a free layer above the spacer layer; a heating device, for heating the free layer to induce a paramagnetic thermal instability in the free layer whereby a magnetization of the free layer randomly switches between different detectable magnetic states upon heating thereof; and a magnetoresistance detection circuit for detecting an instantaneous magnetic state of the free layer.

Abstract: Apparatuses, systems, and methods are disclosed for a chip with phase change memory (PCM) and magnetoresistive random access memory (MRAM). An apparatus includes a semiconductor circuit formed over a substrate of a chip. An apparatus includes a PCM array formed over a semiconductor circuit. An apparatus includes an MRAM array formed over a semiconductor circuit.

Abstract: Apparatuses, systems, and methods are disclosed for a chip with phase change memory (PCM) and magnetoresistive random access memory (MRAM). An apparatus includes a semiconductor circuit formed over a substrate of a chip. An apparatus includes a PCM array formed over a semiconductor circuit. An apparatus includes an MRAM array formed over a semiconductor circuit.

Abstract: A system according to one embodiment includes a pinned layer; a spacer layer above the pinned layer; a free layer above the spacer layer; a heating device, for heating the free layer to induce a paramagnetic thermal instability in the free layer whereby a magnetization of the free layer randomly switches between different detectable magnetic states upon heating thereof; and a magnetoresistance detection circuit for detecting an instantaneous magnetic state of the free layer.

Abstract: A system according to one embodiment includes a pinned layer; a spacer layer above the pinned layer; a free layer above the spacer layer; a heating device, for heating the free layer to induce a paramagnetic thermal instability in the free layer whereby a magnetization of the free layer randomly switches between different detectable magnetic states upon heating thereof; and a magnetoresistance detection circuit for detecting an instantaneous magnetic state of the free layer.

Abstract: Disclosed herein are methods of using embedded disconnected circuits (EDC) in magnetic storage media to assist in reading data from and writing data to the magnetic storage media. A wireless activation signal is used to activate an EDC in a magnetic storage media. Once activated, the EDC may assist to record data in and/or read data from one or more memory locations of the magnetic storage media.

Abstract: Disclosed herein are magnetic storage media with embedded disconnected circuits, and magnetic storage systems comprising such media. A magnetic storage media comprises a recording layer comprising a storage location, and an embedded disconnected circuit (EDC) configured to assist in at least one of writing to or reading from the storage location in response to a wireless activation signal. A magnetic storage system comprises a signal generator configured to generate a wireless activation signal, a magnetic storage media with a plurality of storage locations, and a write transducer and/or a read receiver. The magnetic storage media has at least one EDC configured to assist in writing to and/or reading from at least one of the plurality of storage locations in response to the wireless activation signal.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A plurality of read lines are in a read line layer, and a plurality of write lines are in a write line layer. A plurality of spin accumulation lines are in a spin accumulation line layer disposed between a read line layer and a write line layer. Spin accumulation lines may horizontally cross read lines and write lines. A plurality of vertical magnetoresistive random access memory (MRAM) cells may include polarizers and magnetic tunnel junctions. A vertical MRAM cell may include a polarizer coupled between a spin accumulation line and a write line. A vertical MRAM cell may further include a magnetic tunnel junction coupled between a spin accumulation line and a read line, such that the magnetic tunnel junction and the polarizer are vertically aligned.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a fixed layer, a barrier layer, and a composite free layer. A barrier layer may be disposed between a fixed layer and a composite free layer. A composite free layer may include one or more ferromagnetic layers. A composite free layer may include one or more anisotropy inducer layers that induce an in-plane magnetic anisotropy for the composite free layer in response to a perpendicular bias voltage.

Abstract: A method for fabricating magnetoresistive random access memory (MRAM) devices on a tight pitch is provided. The method generally includes etching a pattern of columns into a hardmask layer disposed on a magnetic tunnel junction (MTJ) disposed on a substrate having electrically conductive contacts, the MTJ comprising a tunnel barrier layer between first and second ferromagnetic layers, the pattern of columns aligned to the electrically conductive contacts; etching the first ferromagnetic layer to expose the tunnel barrier layer and to form columns comprising the hardmask layer and the first ferromagnetic layer; forming a passivation layer on the exposed tunnel barrier layer and on top side surfaces of the columns; and etching the passivation layer on the exposed tunnel barrier layer, the exposed tunnel barrier layer, and the second ferromagnetic layer to form columns comprising the hardmask layer, the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer.

Abstract: Aspects of the present disclose related to a voltage-controlled magnetic anisotropy (VCMA) switching device using an external ferromagnetic biasing film. Aspects of the present disclose provide for a magnetoresistive random access memory (MRAM) device. The MRAM device generally includes a substrate, at least one magnetic tunnel junction (MTJ) stack disposed on the substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having unfixed magnetization, and a magnet disposed adjacent to the second ferromagnetic layer.

Abstract: The present disclosure generally relates to spin-torque-transfer magnetoresistive random access memory (STT-MRAM) memory cells. In the magnetic tunnel junction (MTJ) of the STT-MRAM memory cell, a 1 nm thick barrier layer having a triclinic crystalline structure is doped with B, N, or C. By applying a positive voltage to the MTJ, the magnetic state of the free layer of the MTJ may be switched. By increasing the voltage applied to the MTJ, the MTJ may change to operate as a ReRAM memory cell, and the crystalline structure of the barrier layer may switch to monoclinic. Before reaching the breakdown voltage, a negative voltage may be applied to the MTJ to switch the crystalline structure of the barrier layer back to triclinic. Once the negative voltage is applied and the crystalline structure of the barrier layer is changed back to triclinic, the MTJ may function as a STT-MRAM cell once again.

Abstract: A method for fabricating magnetoresistive random access memory (MRAM) devices on a tight pitch is provided. The method generally includes etching a pattern of columns into a hardmask layer disposed on a magnetic tunnel junction (MTJ) disposed on a substrate having electrically conductive contacts, the MTJ comprising a tunnel barrier layer between first and second ferromagnetic layers, the pattern of columns aligned to the electrically conductive contacts; etching the first ferromagnetic layer to expose the tunnel barrier layer and to form columns comprising the hardmask layer and the first ferromagnetic layer; forming a passivation layer on the exposed tunnel barrier layer and on top side surfaces of the columns; and etching the passivation layer on the exposed tunnel barrier layer, the exposed tunnel barrier layer, and the second ferromagnetic layer to form columns comprising the hardmask layer, the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer.

Abstract: A system according to one embodiment includes a pinned layer; a spacer layer above the pinned layer; a free layer above the spacer layer; a heating device, for heating the free layer to induce a paramagnetic thermal instability in the free layer whereby a magnetization of the free layer randomly switches between different detectable magnetic states upon heating thereof; and a magnetoresistance detection circuit for detecting an instantaneous magnetic state of the free layer.

Abstract: Aspects of the present disclose related to a voltage-controlled magnetic anisotropy (VCMA) switching device using an external ferromagnetic biasing film. Aspects of the present disclose provide for a magnetoresistive random access memory (MRAM) device. The MRAM device generally includes a substrate, at least one magnetic tunnel junction (MTJ) stack disposed on the substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having unfixed magnetization, and a magnet disposed adjacent to the second ferromagnetic layer.

Abstract: A method for fabricating magnetoresistive random access memory (MRAM) devices on a tight pitch is provided. The method generally includes etching a pattern of columns into a hardmask layer disposed on a magnetic tunnel junction (MTJ) disposed on a substrate having electrically conductive contacts, the MTJ comprising a tunnel barrier layer between first and second ferromagnetic layers, the pattern of columns aligned to the electrically conductive contacts; etching the first ferromagnetic layer to expose the tunnel barrier layer and to form columns comprising the hardmask layer and the first ferromagnetic layer; forming a passivation layer on the exposed tunnel barrier layer and on top side surfaces of the columns; and etching the passivation layer on the exposed tunnel barrier layer, the exposed tunnel barrier layer, and the second ferromagnetic layer to form columns comprising the hardmask layer, the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer.