Patents by Inventor Jorg Eichholz

Jorg Eichholz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Control circuit for controlling an electron-emitting device
    Patent number: 7095186
    Abstract: A control circuit for controlling an electron-emitting device is formed to draw, with a voltage applied, an excitation current being related to a number of electrons emitted. The inventive control circuit includes a first determinator for determining whether an amount of charge transported by the excitation current has reached a predetermined charge threshold value, a second determinator for determining whether a magnitude of the excitation current has reached a predetermined current threshold value, and a switch for switching off the excitation current as soon as the first determinator determines that the amount of charge has reached a predetermined charge threshold value, or as soon as the second determinator determines that the magnitude of the excitation current is smaller than the predetermined current threshold value.
    Type: Grant
    Filed: March 1, 2005
    Date of Patent: August 22, 2006
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandte Forschung e.V.
    Inventor: Jörg Eichholz
  • Control circuit for controlling an electron-emitting device
    Publication number: 20050147148
    Abstract: A control circuit for controlling an electron-emitting device is formed to draw, with a voltage applied, an excitation current being related to a number of electrons emitted. The inventive control circuit includes a first determinator for determining whether an amount of charge transported by the excitation current has reached a predetermined charge threshold value, a second determinator for determining whether a magnitude of the excitation current has reached a predetermined current threshold value, and a switch for switching off the excitation current as soon as the first determinator determines that the amount of charge has reached a predetermined charge threshold value, or as soon as the second determinator determines that the magnitude of the excitation current is smaller than the predetermined current threshold value.
    Type: Application
    Filed: March 1, 2005
    Publication date: July 7, 2005
    Inventor: Jorg Eichholz
  • Integratable capacitative pressure sensor
    Patent number: 5431057
    Abstract: A process for manufacturing an integratable capacitative pressure sensor includes the following steps, starting from a semiconductor substrate (1): application of a guard film (2), precipitation of a polycrystalline semiconductor film (4), doping the polycrystalline semiconductor film (4) and removal of the guard film (2) by etching; then insulating the semiconductor zone (7) from the semiconductor substrate (1), and applying an insulator film (8) on the insulated semiconductor zone (7). The pressure sensor product, which is compatible with CMOS circuits and has increased sensor accuracy, includes a semiconductor zone (7) insulated from the semiconductor substrate (1) and an insulator film (8) applied on the insulated semiconductor zone (7), the polycrystalline semiconductor film (4) being located on the insulator film (8) above the insulated semiconductor zone (7).
    Type: Grant
    Filed: February 18, 1994
    Date of Patent: July 11, 1995
    Assignee: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung e.V.
    Inventors: Gunther Zimmer, Jorg Eichholz, Wilfried Mokwa, Michael Kandler, Yiannakis Manoli
  • Integratable capacitative pressure sensor and process for its manufacture
    Patent number: 5321989
    Abstract: A process for manufacturing an integratable capacitative pressure sensor includes the following steps, starting from a semiconductor substrate (1): application of a guard film (2), precipitation of a polycrystalline semiconductor film (4), doping the polycrystalline semiconductor film (4) and removal of the guard film (2) by etching; then insulating the semiconductor zone (7) from the semiconductor substrate (1), and applying an insulator film (8) on the insulated semiconductor zone (7). The pressure sensor product, which is compatible with CMOS circuits and has increased sensor accuracy, includes a semiconductor zone (7) insulated from the semiconductor substrate (1) and an insulator film (8) applied on the insulated semiconductor zone (7), the polycrystalline semiconductor film (4) being located on the insulator film (8) above the insulated semiconductor zone (7).
    Type: Grant
    Filed: February 26, 1993
    Date of Patent: June 21, 1994
    Assignee: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung e.V.
    Inventors: Gunther Zimmer, Jorg Eichholz, Wilfried Mokwa, Michael Kandler, Yiannakis Manoli