Abstract: Chip-support arrangement (23) with a chip support (23) for the manufacture of a chip casing, said chip support being provided on a support foil (20) with conducting paths (21) which are connected on the front side of the support foil facing a chip (39) to contact-surface metallizations (40) of the chip and which with their free ends form a connection-surface arrangement (42) distributed in planar manner for the purpose of connection to an electronic component or a substrate, whereby the conducting paths (21) are arranged on the reverse side of the support foil (20), recesses (28) in the support foil (20) are provided in the region of the contact-surface metallizations (40), the conducting paths for forming the connection-surface arrangement (42) are covered with a perforated mask (36) and the thickness (s) of the support foil is smaller than or substantially equal to the height (h) of the contact-surface metallizations (40) on the surface of the chip.

Abstract: The invention concerns flip chip technology using non-conductive adhesives and gold ball bumps or connectors. The concept is to simultaneously attach and interconnect bare chips with gold ball bumps to organic substrates. The chip is fixed by cooling the insulative adhesive. Environmental testing has demonstrated that performance characteristics were acceptable after 1000 hours of continuous exposure to humidity, and were excellent after 1000 temperature cycles. Such stable interconnections can only be realized by the compliance of the flip chip joint. This stability, can be achieved by precise control of the bonding parameters such as temperature and pressure. This bonding technique allows quality attachment of bare chips on low cost organic substrates.

Abstract: Process for remelting a contact surface metallization (13) applied to a strate (10) in an inert or reducing medium, wherein the medium (18) is formed as alcoholic medium whose boiling point is the same as or above the melting point of the contact surface metallization (13), the medium (18) is applied to the contact surface metallization (13) applied to a contact surface (11, 12) of the substrate (10) outside the inert or reducing medium in such a way that the contact surface metallization (13) is screened with respect to the environment, and the medium (18) is tempered to a temperature which is the same as or higher than the melting point of the contact surface metallization (13).