Abstract: The invention relates to a method for splitting a pattern for use in a multi-beamlet lithography apparatus. The method comprises providing an input pattern to be exposed onto a target surface by means of a plurality of beamlets of the multi-beamlet lithography apparatus. Within the input pattern first and second regions are identified. A first region is a region that is exclusively exposable by a single beamlet of the plurality of beamlets. A second region is a region that is exposable by more than one beamlet of the plurality of beamlets. On the basis of an assessment of the first and second regions it is determined what portion of the pattern is to be exposed by each beamlet.

Abstract: The invention relates to a charged particle lithography apparatus with a charged particle source for creating one or more charged particle beams, a charged particle projector for projecting the beams onto a wafer; and a moveable wafer stage for carrying the wafer. The charged particle source, charged particle projector, and moveable wafer stage are disposed in a common vacuum chamber forming a vacuum environment. The vacuum chamber further has an opening for loading wafers into the chamber and a door.