Abstract: A photovoltaic cell is described comprising a top transparent electrode, a PV layer, a semiconductor substrate, a bottom electrode, and a metal bus-bar grid assembly deposited on said top transparent electrode. In a preferred embodiment, the top transparent electrode is a thin film of indium-tin-oxide (ITO). The method of manufacturing the PV device or cell includes the steps of: cleaning a preprocessed semiconductor bulk having a PV layer on its top surface; depositing a layer of a transparent conductive film over the top of said PV layer; depositing a metal bus-bar grid assembly over said transparent conductive film; and depositing a metal bottom layer on the bottom surface of said semiconductor bulk.

Abstract: A hybrid photovoltaic (PV) device is composed of a first electrode layer, a semiconductor substrate, a semiconductor PV layer, and a bottom electrode that forms a Shottcky junction between said bottom metal electrode and the PV layer. Because of existence of the Shottcky junction, the PV cell permits light to electricity conversion over a wide-range of light wavelengths, from the so-called visible light (between 350 nm to 900 nm wavelength) to the infrared light (over 900 nm wavelength). Also described is a method for manufacturing a hybrid PV device.

Abstract: A multi-chamber PV furnace and method for continuously processing the wafers is described. A preferred embodiment includes three main chambers that allow pre-heating, heating, and cooling of the target material in a streamlined process designed for continuous operation in a mass production environment. The three-chamber design shortens the processing time and permits continuous processing of batches of substrate material in an in-line fashion. Each of the three chambers or zones allows for independent control and management of processing temperature, pressure, and atmosphere by means of inlet gate and outlet gate valve mechanisms.

Abstract: A hybrid photovoltaic (PV) device according comprises a semiconductor substrate, a semiconductor photovoltaic (PV) layer on one side of said substrate, a metal layer on top of said PV layer, a first electrode layer on top of said metal layer, and a bottom metal electrode on the opposite side of said substrate from said PV layer, wherein said metal layer forms a Shottcky junction between said metal layer and said PV layer. Because of existence of the Shottcky junction, the PV cell permits light to electricity conversion over a wide-range of light wavelengths, from visible light (between 350 nm to 900 nm wavelength) to infrared light (over 900 nm wavelength). Also described is a method for manufacturing a hybrid PV device.

Abstract: A semiconductor-to-metal interface with ohmic contact is provided. The interface includes a semiconductor material, a metal layer, and a silicon carbide layer disposed between the semiconductor material and the metal layer. The silicon carbide layer causes the formation of a semiconductor-to-metal interface with ohmic contact. Applications include forming a photovoltaic device with ohmic contact by disposing a layer of silicon carbide over the photovoltaic material before depositing a bottom electrode layer of metal to complete the bottom of a photovoltaic cell.

Abstract: [Problem] To provide a photovoltaic device capable of generating power whether day or night, without affecting the appearance of a structure or reducing lighting or other functions, and able to inhibit rises in room temperature by converting thermal radiation into electrical energy. [Means to Solve Problems] Provide a photoelectric conversion element 3 with a photovoltaic device 1 on structural members 2a-2d facing the outside of a house or other structure. Power generated by the photoelectric conversion element 3 is extracted via a power extraction unit 4. The power conversion element 3 includes a semiconductor layer 11, conductive layer 20, a metal nanostructure 30 having multiple periodic structures 33, a first electrode 41 and a second electrode 42. The first and second electrodes 41, 42 are separated in the direction of the surface of the photoelectric conversion element 1 with the terminals 71, 81 of the power extraction unit 4 respectively connected.

Abstract: A material is manufactured from a single piece of semiconductor material. The semiconductor material can be an n-type semiconductor. Such a manufactured material may have a top layer with a crystalline structure, transitioning into a transition layer, further transitioning into an intermediate layer, and further transitioning to the bulk substrate layer. The orientation of the crystalline pores of the crystalline structure align in layers of the material. The transition layer or intermediate layer includes a material that is substantially equivalent to intrinsic semiconductor. Also described is a method for manufacturing a material from a single piece of semiconductor material by exposing a top surface to an energy source until the transformation of the top surface occurs, while the bulk of the material remains unaltered. The material may exhibit photovoltaic properties.

Abstract: A PIN photovoltaic (PIN PV) device is composed of a first electrode layer, a p-type semiconductor layer, an intrinsic semiconductor layer, an n-type semiconductor substrate, and a back surface electrode. Also described is a method for manufacturing a PIN PV device. In a first embodiment, the method includes cleaning an n-type semiconductor substrate; introducing an inert gas under vacuum and a high temperature to form a high resistivity layer on the top surface of the substrate; forming or depositing a p-type semiconductor layer on the high resistivity layer; forming a transparent electrode layer on the p-type semiconductor layer; and forming a metal electrode on the bottom surface of the substrate. In a second embodiment, an SiC or SiO2 isolation layer is formed on the bottom surface of the substrate after initial cleaning of the wafer before the high resistivity layer is formed on the top of the substrate.

Abstract: A semiconductor-to-metal interface with ohmic contact is provided. The interface includes a semiconductor material, a metal layer, and a silicon carbide layer disposed between the semiconductor material and the metal layer. The silicon carbide layer causes the formation of a semiconductor-to-metal interface with ohmic contact. Applications include forming a photovoltaic device with ohmic contact by disposing a layer of silicon carbide over the photovoltaic material before depositing a bottom electrode layer of metal to complete the bottom of a photovoltaic cell.

Abstract: A wide band gap, heterojunction photovoltaic material comprises a bulk layer, a high-resistivity layer and a microcrystalline silicon carbide layer. The heterojunction semiconductor material is formed by heating a single-piece semiconductor material to form a high-resistivity layer over a bulk layer, the high-resistivity layer having SiC seed crystals at the top surface. A layer of SiC is sputtered over the high-resistivity layer, and the structure is annealed. The annealing and the SiC seed crystals causes the sputtered SiC layer to convert into a microcrystalline ?-SiC layer. When the layer of SiC is sputtered using a p-type SiC target, a p-type SiC layer is formed over the high-resistivity layer. The heterojunction material may exhibit photovoltaic properties. Applications include forming a photovoltaic device with the heterojunction material.

Abstract: A material is manufactured from a single piece of semiconductor material. The material manufactured includes a top layer of a semiconductor compound and a bottom layer of a semiconductor bulk. The material may also have an intrinsic semiconductor layer. The material is created from a transformative process on the single-piece semiconductor material caused by heating a semiconductor material having an impurity under particular conditions. The material manufactured exhibits photovoltaic properties because the layers formed during the transformative process create a p-i-n, a p-n, or an n-n junction having a band-gap difference between the n-type layers.

Abstract: A material is manufactured from a single piece of semiconductor material. The semiconductor material can be an n-type semiconductor. Such a manufactured material may have a top layer with a crystalline structure, transitioning into a transition layer, further transitioning into an intermediate layer, and further transitioning to the bulk substrate layer. The orientation of the crystalline pores of the crystalline structure align in layers of the material. The transition layer or intermediate layer includes a material that is substantially equivalent to intrinsic semiconductor. Also described is a method for manufacturing a material from a single piece of semiconductor material by exposing a top surface to an energy source until the transformation of the top surface occurs, while the bulk of the material remains unaltered. The material may exhibit photovoltaic properties.

Abstract: A material is manufactured from a single piece of semiconductor material. The semiconductor material can be an n-type semiconductor. Such a manufactured material may have a top layer with a crystalline structure, transitioning into a transition layer, further transitioning into an intermediate layer, and further transitioning to the bulk substrate layer. The orientation of the crystalline pores of the crystalline structure align in layers of the material. The transition layer or intermediate layer includes a material that is substantially equivalent to intrinsic semiconductor. Also described is a method for manufacturing a material from a single piece of semiconductor material by exposing a top surface to an energy source until the transformation of the top surface occurs, while the bulk of the material remains unaltered. The material may exhibit photovoltaic properties.

Abstract: A thin film photoelectric conversion device for performing photoelectric conversion of a wide range of light, from the visible range to the infrared range, is provided.

Abstract: [Problem] To provide a photovoltaic device capable of generating power whether day or night, without affecting the appearance of a structure or reducing lighting or other functions, and able to inhibit rises in room temperature by converting thermal radiation into electrical energy. [Means to Solve Problems] Provide a photoelectric conversion element 3 with a photovoltaic device 1 on structural members 2a-2d facing the outside of a house or other structure. Power generated by the photoelectric conversion element 3 is extracted via a power extraction unit 4. The power conversion element 3 includes a semiconductor layer 11, conductive layer 20, a metal nanostructure 30 having multiple periodic structures 33, a first electrode 41 and a second electrode 42. The first and second electrodes 41, 42 are separated in the direction of the surface of the photoelectric conversion element 1 with the terminals 71, 81 of the power extraction unit 4 respectively connected.

Abstract: A photovoltaic structure having a semiconductor substrate, and metal particles bonded to the semiconductor substrate. The photovoltaic structure is sufficiently thin to be translucent or semitransparent. The metal particles are produced when a layer of metal is deposited onto the semiconductor substrate and heated. The photovoltaic structure is capable of causing generation of an electrical current upon exposure to electromagnetic radiation within one or more of the infrared spectrum, the visible light spectrum, or the ultraviolet spectrum.

Abstract: A thin film photoelectric conversion device for performing photoelectric conversion of a wide range of light, from the visible range to the infrared range, is provided.

Abstract: Provided are a thin-film photoelectric conversion device of which thickness can be reduced to several tens nanometers (nm) or below, and a method of manufacturing the thin-film photoelectric conversion device. The thin-film photoelectric conversion device includes a metal silicide layer formed on a surface of a silicon substrate by diffusion of a first metal and silicon, a conductive thin-film layer formed on the surface of the silicon substrate in a region where the second metal thin-film layer is laminated, and a silicon diffused portion formed between the metal silicide layer and the conductive thin-film layer near the surface of the silicon substrate by diffusion of silicon nano-particles.

Abstract: A composition having a high molecular weight carbohydrate with an average molecular weight greater than about 10,000. A hydrolyzed protein is also included in the composition, the protein having an average molecular weight less than about 10,000. The composition has an osmolality in solution that is less than the osmolality of human blood.

Abstract: A security system comprises a secured asset associated with a high-sensitivity GPS receiver that can receive network aiding information. Indoors, the pseudo-ranges from orbiting GPS satellites can be computed by using digital correlators to pull directly received satellite signal transmissions from the noise floor, but the NAV-data transmissions cannot be demodulated well enough due to the attenuation caused by the building structure. So a wireless network is relied upon to provide aiding information that supplies the almanac and ephemeredes. The fact that the NAV-data transmissions cannot be demodulated well enough is taken as indicia that the system is being operated indoors, and such can be used in a geo-fence control to decide if indoor or outdoor use is not permitted. The secured asset can be temporarily or permanently disabled according to such geo-fence controls.