Patents by Inventor Jose J. Guerricabeitia

Jose J. Guerricabeitia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5013398
    Abstract: A plasma etch process to anisotropically etch a sandwich structure of silicon dioxide, polycrystalline silicon, and silicon dioxide "in situ", that is, in a single etch chamber. The silicon dioxide is etched using a SF.sub.6 /CHF.sub.3 /He chemistry. The polycrystalline silicon is etched using a HBr/He chemistry. A non-erodible cathode is used. Tungsten silicide may replace the polycrystalline silicon. Silicon nitride may replace the silicon dioxide.
    Type: Grant
    Filed: May 29, 1990
    Date of Patent: May 7, 1991
    Assignee: Micron Technology, Inc.
    Inventors: Paul D. Long, Jose J. Guerricabeitia