Abstract: A semiconductor structure, system and method. The semiconductor structure comprises: a substrate including circuitry therein; and a semiconductor stack on the substrate, the semiconductor stack including: a first electrically conductive layer including a metal and electrically coupled to the circuitry of the substrate; and a second electrically conductive layer between the substrate and the first electrically conductive layer, the second electrically conductive layer including one of a refractory metal, or a combination including silicon, carbon and nitride. The second electrically conductive layer may serve as a barrier layer between the first electrically conductive layer and the material of the underlying substrate, in this manner avoiding the formation of an intermixing region between the metal of the first electrically conductive layer and the material of the substrate during deposition of the metal.

Abstract: In one embodiment, a crosspoint memory device is manufactured by forming a material stack and patterning the material stack to form a plurality of memory cells of the cross point memory device. Forming the material stack includes depositing a select device (SD) region material comprising chalcogenide, depositing a layer comprising carbon on the SD region material at a temperature below 40° C., depositing an ohmic contact layer on the layer comprising carbon, and depositing a phase change material (PM) region material comprising chalcogenide on the ohmic contact layer.

Abstract: A mobile phone case system having a case divided into a first half case having a top portion and side edges and a second half case having a bottom portion and side edges, together the first half and second half case form an inner cavity adapted to hold a mobile phone, with a first stand component pivotally attached to an outer surface of the bottom portion of the second half case via a hinge component, the hinge component allows the first stand component to pivot between an extended position wherein bottom edges of the first stand component are pivoted away from the outer surface of the bottom portion of the second half case and a retracted position wherein the first stand component is flush with the outer surface of the bottom portion of the second half case.

Abstract: A software platform in an Internet Protocol (IP) phone having the ability to be used with different communication infrastructures such as broadband, wireless communication and Plain Old Telephone System (POTS) service. Further, the software platform in the IP phone has the ability to be used with different applications operating on the IP phone. Further, the IP phone has the ability to perform additional functionality than traditional Public Switched Telephone Network (PSTN) phones, such as searches and advertising, given its ability to converge voice and data within a single terminal.

Abstract: A CMP slurry for and method of polishing a semiconductor wafer during formation of metal interconnects are disclosed. The present invention utilizes a first slurry comprising a first oxidizer, preferably ferric nitrate, to remove the excess metal of the metal interconnect but which leaves the metal residues on the surface of the wafer. A second slurry comprising another oxidizer, preferably potassium iodate solution, having a greater affinity to both the metal residue and the liner material than the underlying dielectric is used to remove the metal residue and liner material with significantly reduced scratching of the underlying dielectric. The more robust metal interconnects formed utilizing the present invention is effective in lowering the overall resistance of a wafer, reducing the number of shorts, and provides greater protection of the underlying dielectric. Overpolishing of the wafer and its associated problems are avoided.

Abstract: The present invention is a method and apparatus for CMP processing that reduces scratching of the insulating film and conductor lines of a wafer. More specifically, the method and apparatus introduce an aqueous solution to the polishing pad and wafer during various intervals of the polishing procedure.

Abstract: The present invention provides a method of preventing the build-up of polishing material within low areas of a substrate during polishing. Following the blanket deposition of a first layer, a selectively removable material is deposited over the first layer, wherein the selectively removable material fills the low areas. A surface of the substrate is polished removing the excess first layer and selectively removable material from the surface, leaving the first layer and selectively removable material within the low area. Following polishing, the selectively removable material is removed from the low areas prior to the deposition of a second layer.

Abstract: A keypad controller for use with a video game comprising a housing; a cable connector mechanism extended from the housing and coupleable to a plug end of a cable for connection and communication with a video game; and a plurality of actuateable directional switches each coupled to the cable connector mechanism and extended from the housing with each directional switch associated with a compass direction and with each directional switch generating a unique signal when actuated for controlling the direction of events of a video game.