Abstract: A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/?20×10?7/° C. of the linear coefficient thermal of expansion of the germanium first layer.

Abstract: A method of measuring the shape of a glass sheet is provided. The method includes positioning the glass sheet in contact with a fluid and measuring the distance between a sensor and a surface of the glass sheet at a plurality of locations on the surface thereof. The method may further include deconvolving the shape of the glass sheet into at least one simple shape element, such as cylindrical or spherical, and may further include varying the temperature profile of an array of heaters in a glass manufacturing process based on the at least one shape element.

Abstract: A glass laminate substrate for electronic substrates, such as flat panel displays, includes a transparent glass core bounded by transparent glass skin layers, wherein the coefficient of thermal expansion of the core is greater than the coefficient of thermal expansion of the skin layers thereby forming a residual compressive stress in the skin layers and a residual tensile stress in the core. The relative thickness of the skin layers can be selected to enhance the strength of the glass laminate substrate while maintaining a sufficiently low residual tensile stress in the core to allow scribing and separating of the substrate to size. Interlayers can be located between the core and the skin layers, wherein the interlayers include a residual compressive stress, and produce a reduced residual tensile stress in the core.