Abstract: The invention relates to a method for fabricating semiconductor radiation detectors comprising a bulk of a first conductivity type for detecting radiation with further semiconductor layers of a second and a first conductivity type patterned thereon, at least one of the further semiconductor layers being deposited by epitaxy. The invention relates further to integration of electronic components in radiation detectors in employing epitaxy, as well as to radiation detectors of a great variety in which epi layers are deposited as thin radiation entrance windows, as guard structures and as resistive layers.

Abstract: A strip detector for detecting ionizing particles and/or radiation, consisting of a silicon substrate which, at least on one substrate surface thereof, provides for n-doped zones spaced from each other as strips and voltage supply regions as well as a p-doped isolation zone between the n-doped zones, and including a first isolator layer as well as metal strips disposed above the n-doped zones, wherein immediately above the first isolated layer there is at least one further isolator layer provided and that at least one of the isolator layers is discontinuous in its projection above the intermediate zone of the two adjacent n-doped zones, and wherein the p-doped isolation zone presents a lateral distribution of concentration of the p-type doping material such that in the zone below the discontinuity of the discontinuous isolator layer, a higher concentration of doping material is present than in the isolation regions immediately adjacent to the n-doped zones.

Abstract: A process for connecting multiple electric contact points of at least one substrate with corresponding contact points of a further substrate is distinguished by the respective electric contacting points of both substrates coming to at least partially lie on top of each other and by the respective substrates being connected to each other by means of anodic bonding.

Abstract: A semiconductor detector structure consists of a unipolar or single-pole nsistor disposed or arranged on a substantially depleted semiconductor body, with a drain, a source, a resetting contact, a top gate and a potentially floating layer forming at least one gate of the unipolar transistor, as well as at least one capacitor. The source is directly connected to the first electrode or electrodes of the capacitor or capacitors. The capacitor or the capacitors are integrated jointly with or into the semiconductor structure.

Abstract: A position-sensitive semiconductor detector is provided having a completely depleted primary area of a first conductivity and insulation layers on the two main surfaces as well as conductive electrodes on the insulation layers (MIS structure).

Abstract: In a semiconductor element having a semiconductor body, an electrode structure is arranged on at least one major surface of the element for storing charge carriers of at least one conductivity in cells formed by the electrode structure. Control electrodes which are at least partially enclosed in the semiconductor body are arranged in at least one plane essentially parallel to the major surface of the semiconductor body. The control electrodes similarly enable charge carriers to be stored in defined cells. The control electrodes stored also make it possible to shift stored charges from one cell to another, whereby at least two independent charge images can be stored in a three-dimensionally arranged storage cell pattern.

Abstract: A semiconductor radiation detector has an at least partially or even completely depleted base region of a first conductivity, to which a bias voltage is applied, and has at least one output or read-out electrode at which a signal is produced by the charge carriers generated by radiation incident on the detector. The read-out or output electrode includes a highly doped region of the first or a second conductivity, onto which an insulating layer and thereupon a conducting electrode layer are applied for outputting the generated or induced signals. The voltage application to the highly doped region of the read-out or output electrode is achieved through a high impedance through the base region of the detector, from at least one electrode of the same conductivity as that of the output or read-out electrode. Thus, it is simply possible to capacitively couple the detector to external circuitry even if these external circuits have a complex structure or arrangement.

Abstract: A semiconductor element with a basic region, to which a bias voltage is applied from at least one boundary surface and which completely depletes the basic region of majority carriers and produces a potential minimum in the basic region for the majoity carriers, in which the latter are collected and moved.On at least one side of the potential minimum, the quantity, movement direction and/or speed of the minority carriers is controlled by the course of the potential minimum.

Abstract: A description is given of a semiconductor detector with a low capacitance for detecting radiation and particles having a semiconductor body of a first conductivity type, to which is applied at least one collecting electrode for the majority carriers. Regions of a second conductivity type are provided on the two main surfaces of the semiconductor body and with the latter form depletion layers biased in such a way that the semiconductor body is substantially completely depleted of majority carriers and in the semiconductor body a potential gradient is present, through which flow to the collecting electrode the majority carriers produced by the radiation.

Abstract: A passivated semiconductor pn junction is provided which has a high electric strength, one area being heavily doped and being very thin, in particular for radiation detectors. The pn junction has an edge zone at which a depletion zone (surface channel) is provided underneath the passivation layer.

Abstract: A compound rotary and/or linear motor comprises two interposed magnet systems of which at least one is variable by an electronic control system to generate rotary and/or linear motion of the other. One of the two magnet systems consists of axially consecutive arrangements, preferably rings, of electrically separate magnet poles. The other magnet system contains at least one pair of magnet poles. The electronic control system is designed optionally or according to program to generate rotary motion by sequentially energizing consecutive magnets in a ring, to generate linear motion by sequentially energizing axially consecutive magnets and to generate a combined linear and/or rotary motion by sequentially energizing consecutive magnets forming a helix.

Abstract: The invention provides a high vacuum pump system of high pumping speed in which the surfaces that are to be cooled are coated with adsorbents in such a manner that it is possible to bale out and activate the coatings at temperatures between 250.degree. and 400.degree. C and then to use them for the maintenance or repeated generation of high vacua containing no hydrocarbons down to pressures as low as about 10.sup.-8 torrs.