Abstract: An apparatus that comprises a liquid mirror. The liquid mirror includes a liquid that forms an interface with a fluid adjacent to the liquid. The liquid mirror also includes a layer of reflective particles located at the interface, wherein the layer forms a reflective surface.

Abstract: A nanostructured substrate is disclosed having a plurality of substrate openings disposed between the nanostructures on the substrate. When a desired fluid comes into contact with the substrate, at least a portion of the fluid is allowed to pass through at least one of the openings. In a first embodiment, the fluid is caused to pass through the openings by causing the fluid to penetrate the nanostructures. In a second embodiment, the substrate is a flexible substrate so that when a mechanical force is applied to the substrate, such as a bending or stretching force, the distance between nanoposts or the diameter of nanocells on the substrate increases and the liquid penetrates the nanostructures. In another embodiment, a first fluid, such as water, is prevented from penetrating the nanostructures on the substrate while a second fluid is permitted to pass through the substrate via the openings in the substrate.

Abstract: Apparatus including a chip substrate having a first chip surface facing away from a second chip surface; an array of microelectronic elements on the first chip surface; and an array of conductors each in communication with one of the microelectronic elements, the conductors passing through the chip substrate and fully spanning a distance between the first and second chip surfaces.

Abstract: An apparatus comprising a liquid switch. The liquid switch comprises a substrate having a surface with first and second regions thereon and a fluid configured to contact both of the regions. The regions each comprise electrically connected fluid-support-structures, wherein each of the fluid-support-structures have at least one dimension of about 1 millimeter or less. The regions are electrically isolated from each other.

Abstract: A method and apparatus are disclosed wherein a battery comprises an electrode having at least one nanostructured surface. The nanostructured surface is disposed in a way such that an electrolyte fluid of the battery is prevented from contacting the electrode, thus preventing discharge of the battery when the battery is not in use. When a voltage is passed over the nanostructured surface, the electrolyte fluid is caused to penetrate the nanostructured surface and to contact the electrode, thus activating the battery. In one illustrative embodiment, the battery is an integrated part of an electronics package. In another embodiment, the battery is manufactured as a separate device and is then brought into contact with the electronics package. In yet another embodiment, the electronics package and an attached battery are disposed in a projectile that is used as a military targeting device.

Abstract: Techniques for heat transfer are provided. In one aspect of the invention, a heat-transfer device is provided. The heat-transfer device comprises one or more microchannels suitable for containing a heat-transfer fluid, one or more of the microchannels having protruding structures on at least one inner surface thereof configured to affect flow of the heat-transfer fluid through the one or more microchannels. The structures may comprise posts coated with a hydrophobic coating.

Abstract: A method and apparatus is disclosed wherein nanostructures or microstructures are disposed on a surface of a body (such as a submersible vehicle) that is adapted to move through a fluid, such as water. The nanostructures or microstructures are disposed on the surface in a way such that the contact between the surface and the fluid is reduced and, correspondingly, the friction between the surface and the fluid is reduced. In an illustrative embodiment, the surface is a surface on a submarine or other submersible vehicle (such as a torpedo). Illustratively, electrowetting principles are used to cause the fluid to at least partially penetrate the nanostructures or microstructures on the surface of the body in order to selectively create greater friction in a desired location of the surface. Such penetration may be used, for example, to create drag that alters the direction or speed of travel of the body.

Abstract: A mask layer having four mask films used in the fabrication of an interconnect structure of a semiconductor device. The first mask film and the third mask film have substantially equal etch rates. The second mask film and the fourth have substantially equal etch rates film, and different from that of the etch rate of the first and third mask films. A via is etched to the first mask film. Then a trench is etched to the third mask film of the mask layer. The via and trench are then etched in a dielectric material. The second, third and fourth mask films are removed and the first mask film remains a passivation layer for the dielectric material. A conductive metal is deposited in the via and trench.

Abstract: A biological/chemical detector is disclosed that is capable of manipulating liquids, such as reagent droplets, without relying on microchannels. In a first embodiment, fluid flow is passed through the detector, thus causing particles wholly or partially containing an illustrative chemical compound or biological species to be collected on the tips of nanostructures in the detector. A droplet of liquid is moved across the tips of the nanostructures, thus absorbing the particles into the liquid. The droplet is caused to penetrate the nanostructures in a desired location, thus causing the chemical compound or biological species in said liquid droplet to come into contact with, for example, a reagent. In another embodiment, a fluid flow is passed through the nanostructured surfaces of the detector such that the chemical compound and/or biological species are deposited between the nanoposts of a desired pixel.

Abstract: A liquid electrical switch is disclosed that uses a plurality of droplets of conducting liquid to form an electrical path. In a first embodiment, at least a first voltage differential is used to create a separation distance between two droplets. The droplets are illustratively contained within a housing and surrounded by an immiscible, insulating liquid. In this embodiment, the at least a first voltage differential draws at least a portion of at least one of the droplets away from a second droplet, thus preventing electrical current from flowing from the at least one droplet to the second droplet. In another embodiment, the at least a first voltage differential is changed in a way such that at least one liquid droplet is made to come into contact with a second droplet, thus creating an electrical path between the two droplets.

Abstract: An apparatus includes a semiconductor or dielectric wafer-substrate and first and second multi-layer structures located over the wafer-substrate. The first multi-layer structure includes an ionizer or an electronic ion detector. The second multi-layer structure includes an ion trap having entrance and exit ports. The ionizer or electronic ion detector has a port coupled to one of the ports of the ion trap.

Abstract: In fabricating an apparatus such as a silicon device or an optical device initially a wafer having a plurality of dies is formed. These dies are then separated into individual dies and the individual dies are formed into encapsulated devices having input and/or output leads. The dies are separated by a means that is not based on crystallographic plane cleavage. Additionally the boundary along which the separation is performed is not a linear path. By employing non-linear paths that are not constrained by crystallographic planes, device yield per wafer is substantially improved particularly for dies having non-linear boundaries. In one embodiment the dies are separated using an alternating dry etching and polymer deposition technique.

Abstract: A method and apparatus is disclosed wherein the movement of a droplet disposed on a nanostructured or microstructured surface is determined by at least one characteristic of the nanostructure feature pattern or at least one characteristic of the droplet. In one embodiment, the movement of the droplet is laterally determined by at least one characteristic of the nanostructure feature pattern such that the droplet moves in a desired direction along a nanostructured feature pattern. In another embodiment, the movement of the droplet is determined by either at least one characteristic of the nanostructure feature pattern or at least one characteristic of the droplet in a way such that the droplet penetrates the feature pattern at a desired area and becomes substantially immobile.

Abstract: A novel mask layer is used in the dual damascene construction of an interconnect structure of an integrated circuit device. The interconnect structure has a low-k dielectric material. The mask layer has a passivation film deposited on the low-k dielectric material, a barrier film is deposited over the passivation film and a metallic film is deposited over the barrier film. The metallic film increases the overall etch selectivity of the mask layer to assure a faithful transfer of via and trench features to the low-k dielectric material during the etching steps of the dual damascene process.

Abstract: A mask layer having four mask films used in the fabrication of an interconnect structure of a semiconductor device. The first mask film and the third mask film have substantially equal etch rates. The second mask film and the fourth have substantially equal etch rates film, and different from that of the etch rate of the first and third mask films. A via is etched to the first mask film. Then a trench is etched to the third mask film of the mask layer. The via and trench are then etched in a dielectric material. The second, third and fourth mask films are removed and the first mask film remains a passivation layer for the dielectric material. A conductive metal is deposited in the via and trench.

Abstract: A mask layer having four mask films used in the fabrication of an interconnect structure of a semiconductor device. The first mask film and the third mask film have substantially equal etch rates. The second mask film and the fourth have substantially equal etch rates film, and different from that of the etch rate of the first and third mask films. A via is etched to the first mask film. Then a trench is etched to the third mask film of the mask layer. The via and trench are then etched in a dielectric material. The second, third and fourth mask films are removed and the first mask film remains a passivation layer for the dielectric material. A conductive metal is deposited in the via and trench.

Abstract: A novel mask layer is used in the dual damascene construction of an interconnect structure of an integrated circuit device. The interconnect structure has a low-k dielectric material. The mask layer has a passivation film deposited on the low-k dielectric material, a barrier film is deposited over the passivation film and a metallic film is deposited over the barrier film. The metallic film increases the overall etch selectivity of the mask layer to assure a faithful transfer of via and trench features to the low-k dielectric material during the etching steps of the dual damascene process.