Abstract: A shoe includes a sole and upper secured to the sole. The upper has a knitted element formed of unitary one-piece construction on a knitting machine. The knitted element includes a Moc seam allowance within a toe region, lateral and medial metatarsal regions, and lateral and medial ball regions. The upper has a Moc seam formed in part by the knitted element. The Moc seam is in at least the toe region, the lateral metatarsal region, and the medial metatarsal region. The Moc seam includes a core around which the Moc seam allowance is wrapped and stitched to itself to contain the core at least partially within a cavity formed by the Moc seam allowance.

Abstract: A shoe includes a sole and upper secured to the sole. The upper has a knitted element formed of unitary one-piece construction on a knitting machine. The knitted element includes a Moc seam allowance within a toe region, lateral and medial metatarsal regions, and lateral and medial ball regions. The upper has a Moc seam formed in part by the knitted element. The Moc seam is in at least the toe region, the lateral metatarsal region, and the medial metatarsal region. The Moc seam includes a core around which the Moc seam allowance is wrapped and stitched to itself to contain the core at least partially within a cavity formed by the Moc seam allowance.

Abstract: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

Abstract: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

Abstract: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

Abstract: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

Abstract: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

Abstract: An N-channel radiation-hardened transistor has source and drain regions that are fully enclosed by an intrinsically radiation-hardened thin gate-oxide. which substantially reduces radiation-induced intra-device and inter-device leakage currents. The width of the polysilicon gate directly between the source and drain can be the minimum feature size allowed by the design rules of a given process. The width of the polysilicon surrounding the device is chosen by design rules from the minimum allowed to some wider value to allows the polysilicon overlap to be sufficient to self-align the source and drain without compromising the doping under the field region. The polysilicon should be sufficiently wide so that it completely overlaps any transitional oxide such as LOCOS or trench oxide. The gate capacitance of the N-channel transistor can be tuned to balance SEU hardness and switching performance.

Abstract: An N-channel radiation-hardened transistor has source and drain regions that are fully enclosed by an intrinsically radiation-hardened thin gate-oxide, which substantially reduces radiation-induced intra-device and inter-device leakage currents. The width of the polysilicon gate directly between the source and drain can be the minimum feature size allowed by the design rules of a given process. The width of the polysilicon surrounding the device is chosen by design rules from the minimum allowed to some wider value to allows the polysilicon overlap to be sufficient to self-align the source and drain without compromising the doping under the field region. The polysilicon should be sufficiently wide so that it completely overlaps any transitional oxide such as LOCOS or trench oxide. The gate capacitance of the N-channel transistor can be tuned to balance SEU hardness and switching performance.

Abstract: A radiation shielded integrated circuit device comprises an integrated circuit die and a first layer of shielding material supporting the integrated circuit die. The first layer has a central portion having a first thickness having an area at least as large as the area of the IC die, and an outer portion having a second thickness less than the first thickness. A wall of ceramic material has a first edge connected to the outer portion of the first layer of shielding material. The wall of ceramic material has an inner surface defining, in conjunction with the first layer of shielding material, a well containing the integrated circuit die. A plurality of wire bond pads are supported by the inner surface of the ceramic wall. A plurality of input/output pads are connected to an exterior surface of the ceramic walls. Conducting material extending through the ceramic material connects each of the wire bond pads to a respective one of input/output pads.

Abstract: A portable cordless telephone transceiver-radio receiver includes a headset which is driven by the audio output of a radio receiver until an incoming radio frequency (RF) telephone ring signal is detected by a telephone receiver. A telephone audio ring signal is generated based on the detected RF ring signal and the audio ring signal is converted to sound at the headset. The audio ring signal operates a latch which blocks or squelches the audio output of the radio receiver from the headset until the latch is reset. A "talk/off" switch is operated by the user to initiate and terminate conversation and to automatically reset the latch. In another embodiment, the radio receiver is squelched or turned off directly by the "talk/off" switch. In a further embodiment, the audio ring signal is blocked from the head set until a prescribed number of audio ring signals have been detected.