Patents by Inventor Joseph C. Boisvert

Joseph C. Boisvert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Recessed p-type region cap layer avalanche photodiode
    Patent number: 6730979
    Abstract: A recessed p-type region cap layer avalanche photodiode (12) is provided. The photodiode (12) includes a semiconductor substrate (30) and a semiconductor stack (32), which is electrically coupled to the substrate (30). A cap layer (34) is electrically coupled to the stack (32) and includes a recessed p-type region (36). The recessed p-type region (36) forms a p-n junction (38) with the stack (32). A method of forming the photodiode (12) is also provided. The method includes forming the substrate (30), the stack (32), and the cap layer (34). The cap layer (34) is selectively etched to expose the stack (32) and form a cap layer opening (42). Dopant is diffused through the cap layer opening (42) into the stack (32) to form the p-n junction (38).
    Type: Grant
    Filed: September 12, 2002
    Date of Patent: May 4, 2004
    Assignee: The Boeing Company
    Inventor: Joseph C. Boisvert
  • RECESSED P-TYPE REGION CAP LAYER AVALANCE PHOTODIODE
    Publication number: 20040051165
    Abstract: A recessed p-type region cap layer avalanche photodiode (12) is provided. The photodiode (12) includes a semiconductor substrate (30) and a semiconductor stack (32), which is electrically coupled to the substrate (30). A cap layer (34) is electrically coupled to the stack (32) and includes a recessed p-type region (36). The recessed p-type region (36) forms a p-n junction (38) with the stack (32). A method of forming the photodiode (12) is also provided. The method includes forming the substrate (30), the stack (32), and the cap layer (34). The cap layer (34) is selectively etched to expose the stack (32) and form a cap layer opening (42). Dopant is diffused through the cap layer opening (42) into the stack (32) to form the p-n junction (38).
    Type: Application
    Filed: September 12, 2002
    Publication date: March 18, 2004
    Inventor: Joseph C. Boisvert
  • Diffused junction photodetector and fabrication technique
    Publication number: 20030230761
    Abstract: ABSTRACT A diffused junction semiconductor (12) for detecting light (48) at a predetermined wavelength is provided including a base (30) and an epitaxial structure (32) electrically coupled to the base (30). The epitaxial structure (32) forms a p-n junction (38) in the base (30). The epitaxial structure (32) includes at least one diffusion layer (50) electrically coupled to the base (30). At least one of the diffusion layers (50) contributes impurities in at least a portion of the base (30) to form the p-n junction (38) during growth of the epitaxial structure (32). A method for performing the same is also provided.
    Type: Application
    Filed: June 14, 2002
    Publication date: December 18, 2003
    Inventors: Charles B. Morrison, Rengarajan Sudharsanan, Moran Haddad, Dimitri Krut, Joseph C. Boisvert, Richard R. King, Nasser H. Karam