Abstract: Methods of producing gratings with trenches having variable height are provided. In one example, a method of forming a diffracted optical element may include providing an optical grating layer over a substrate, patterning a hardmask over the optical grating layer, and forming a sacrificial layer over the hardmask, the sacrificial layer having a non-uniform height measured from a top surface of the optical grating layer. The method may further include etching a plurality of angled trenches into the optical grating layer to form an optical grating, wherein a first depth of a first trench of the plurality of trenches is different than a second depth of a second trench of the plurality of trenches.

Abstract: Embodiments of the present disclosure generally relate to substrate support assemblies for retaining a surface of a substrate having one or more devices disposed on the surface without contacting the one or more devices and deforming the substrate, and a system having the same. In one embodiment, the substrate support assembly includes an edge ring coupled to a body of the substrate support assembly. A controller is coupled to actuated mechanisms of a plurality of pixels coupled to the body of the substrate support assembly such that portions of pixels corresponding to a portion of the surface of a substrate to be retained are positioned to support the portion without contacting one or more devices disposed on the surface of the substrate to be retained on the support surface.

Abstract: A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

Abstract: Embodiments of the disclosure relate to systems and methods for forming devices on a substrate. For example, a method for forming devices on a substrate can include projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a first surface of a substrate and projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a second surface of a substrate. In these embodiments, the first surface and the second surface are on opposite sides of the substrate. Therefore, the ion beams can form the devices on both sides of the substrate.

Abstract: A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.

Abstract: Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.

Abstract: Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ? relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ? between the ion beam and a surface normal of the gratings. The gratings have slant angles ?? relative to the surface normal of the substrates. The rotation angles ? selected by an equation ?=cos?1(tan(??)/tan(?)).

Abstract: A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

Abstract: A system and method that is capable of measuring the incident angle of an ion beam, especially an ion beam comprising heavier ions, is disclosed. In one embodiment, X-rays, rather than ions, are used to determine the channeling direction. In another embodiment, the workpiece is constructed, at least in part, of a material having a high molecular weight such that heaver ion beams can be measured. Further, in another embodiment, the parameters of the ion beam are measured across an entirety of the beam, allowing components of the ion implantation system to be further tuned to create a more uniform beam.

Abstract: A method of forming angled structures in a substrate. The method may include the operation of forming a mask by etching angled mask features in a mask layer, disposed on a substrate base of the substrate, the angled mask features having sidewalls, oriented at a non-zero angle of inclination with respect to perpendicular to a main surface of the substrate. The method may include etching the substrate with the mask in place, the etching comprising directing ions having trajectories arranged at a non-zero angle of incidence with respect to a perpendicular to the main surface.

Abstract: Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.

Abstract: A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ? relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ?1 between the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction.

Abstract: A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

Abstract: A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.

Abstract: Methods of producing gratings with trenches having variable height are provided. In one example, a method of forming a diffracted optical element may include providing an optical grating layer over a substrate, patterning a hardmask over the optical grating layer, and forming a sacrificial layer over the hardmask, the sacrificial layer having a non-uniform height measured from a top surface of the optical grating layer. The method may further include etching a plurality of angled trenches into the optical grating layer to form an optical grating, wherein a first depth of a first trench of the plurality of trenches is different than a second depth of a second trench of the plurality of trenches.

Abstract: A method of forming an optical grating component. The method may include providing a substrate, the substrate comprising an underlayer and a hard mask layer, disposed on the underlayer. The method may include patterning the hard mask layer to define a grating field and etching the underlayer within the grating field to define a variable height of the underlayer along a first direction, the first direction being parallel to a plane of the substrate. The method may include forming an optical grating within the grating field using an angled ion etch, the optical grating comprising a plurality of angled structures, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the plurality of angled structures define a variable depth along the first direction, based upon the variable height of the underlayer.

Abstract: A method of forming a three-dimensional transistor device. The method may include providing a fin array on a substrate, the fin array comprising a plurality of fin structures, formed from a monocrystalline semiconductor, and disposed subjacent to a hard mask layer. The method may include directing angled ions at the fin array, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The angled ions may etch the plurality of fin structures to form a stack of isolated nanowires, within a given fin structure.

Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ? relative to a surface normal of the substrates and form gratings in the grating material.

Abstract: An optical grating component may include a substrate, and an optical grating, the optical grating being disposed on the substrate. The optical grating may include a plurality of angled structures, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the plurality of angled structures are arranged to define a variable depth along a first direction, the first direction being parallel to the plane of the substrate.

Abstract: A beamline architecture including a wafer handling chamber, a load-lock coupled to the wafer handling chamber for facilitating transfer of workpieces between an atmospheric environment and the wafer handling chamber, a plasma chamber coupled to the wafer handling chamber and containing a plasma source for performing at least one of a plasma pre-clean process, a plasma enhanced chemical vapor deposition process, a plasma annealing process, a pre-heating process, and an etching process on workpieces, a process chamber coupled to the wafer handling chamber and adapted to perform an ion implantation process on workpieces, and a valve disposed between the wafer handling chamber and the plasma chamber for sealing the plasma chamber from the wafer handling chamber and the process chamber, wherein a pressure within the plasma chamber and a pressure within the process chamber can be varied independently of one another.