Patents by Inventor Joseph Dzengeleski

Joseph Dzengeleski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10925146
    Abstract: An ion source chamber with an embedded heater is disclosed. The heater comprises a radiant heater, such as a heat lamp or light emitting diodes, and is disposed within the ion source chamber. The radiant heat from the heater warms the interior surfaces of the ion source chamber. Further, the ion source chamber is designed such that the plasma is generated in a portion of the ion source chamber that does not contain the heater. Additionally, a controller may be in communication with the heater so as to maintain the ion source chamber at a desired temperature when a plasma is not being generated in the ion source chamber.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Ryan, Todd MacEachern, Jeffrey Krampert, Joseph Dzengeleski
  • Publication number: 20070100567
    Abstract: A system, method and program product for determining the integrity of a faraday system are disclosed. The invention uses a computer infrastructure to control an automatic determination of a faraday system integrity, when the faraday system is not in operation. The determination is based on the variations on an impedance of the faraday system. An impedance of a faraday system is determined based on the discharge characteristics of a capacitor that discharges through the faraday system.
    Type: Application
    Filed: November 1, 2005
    Publication date: May 3, 2007
    Inventors: Vinay Aggarwal, Joseph Dzengeleski
  • Publication number: 20060076510
    Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.
    Type: Application
    Filed: October 7, 2004
    Publication date: April 13, 2006
    Inventors: Shengwu Chang, Antonella Cucchetti, Joseph Dzengeleski, Gregory Gibilaro, Rosario Mollica, Gregg Norris, Joseph Olson, Marie Welsch
  • Publication number: 20050133728
    Abstract: A systematic in-situ analysis is provided for ensuring that a uniform and accurate ion implantation dose for workpieces is being realized. Prior to implantation the system determines whether the calibration of a dose controller is within predetermined tolerance values. If the dose controller is outside of these values, the implantation process is halted so that the calibration can be remedied without further damaging any workpieces by mis-dosing.
    Type: Application
    Filed: December 22, 2003
    Publication date: June 23, 2005
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Tamer Onat, Rajen Sud, Gregory Gibilaro, Joseph Dzengeleski