Abstract: A flat substrate polishing and polishing pad conditioning head for a chemical-mechanical-planarization apparatus is provided which has been shown to double the useable life of a polishing pad used to planarize and/or polish both oxide and metal outer layers in the processing of semiconductor wafers and to provide for more uniform polishing during the life of the polishing pad. The polishing pad conditioning head comprises a suitable substrate (26), a diamond grit (28) that is evenly distributed over the surface of the substrate (26) and a CVD diamond (30) grown onto the diamond grit (28) and the substrate (26) so that the diamond grit (28) becomes encased in the CVD diamond (30) and bonded to the surface of the substrate (26). The method for evenly distributing a mono-layer of diamond grit in a highly uniform manner over the exposed surface of a substrate can be done either by using diamond grit applied over a photoresist pattern or a screen printed pattern, or using diamond grit from a liquid mixture.

Abstract: A process and apparatus for polishing diamond or carbon nitride. A reaction and polishing take place at the interface between an oxygen superionic conductor (yittria-stabilized zirconia) and the diamond or carbon nitride. Oxygen anions are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Other mechanisms, such as an electric field and/or heat, that increase the partial pressure of oxygen on the opposing side of the interface of reaction can be used to accelerate the reaction time. The process may be undertaken at low temperatures and without mechanical motion, making it an attractive and useful polishing method. In addition, there is no residue of the polishing process which needs to be removed and polishing can be accomplished in ambient air.

Abstract: Apparatus and process for polishing a diamond or carbon nitride film by reaction of the film with oxygen anions at the interface between the film and a superionic conductor (e.g., yttria stabilized zirconia) placed in contact with the film. Oxygen anions produced by the formation of vacancies in the superionic conductor are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Application of an electric field and/or heat can be used to increase the oxygen partial pressure on the side of the interface opposite the film. An oxygen plasma can be supplied to the superionic conductor such that oxygen ions from the plasma transpire through the superionic conductor to the interface and react with the diamond or carbon nitride.

Abstract: A process and apparatus for polishing diamond or carbon nitride. A reaction and polishing take place at the interface between an oxygen superionic conductor (yittria-stabilized zirconia) and the diamond or carbon nitride. Oxygen anions are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Other mechanisms, such as an electric field and/or heat, that increase the partial pressure of oxygen on the opposing side of the interface of reaction can be used to accelerate the reaction time. The process may be undertaken at low temperatures and without mechanical motion, making it an attractive and useful polishing method. In addition, there is no residue of the polishing process which needs to be removed and polishing can be accomplished in ambient air.