Patents by Inventor Joseph F. Martino, Jr.

Joseph F. Martino, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making silicon-insulator-polysilicon infrared image device utilizing epitaxial deposition and selective etching
    Patent number: 4142925
    Abstract: A layer of epitaxial silicon is grown on a silicon growth substrate, a thin layer of silicon dioxide or other suitable insulator is grown (in the case of silicon dioxide) or deposited (for other insulators) on the epitaxial layer, and a thick layer of polysilicon is grown on the dioxide layer. The silicon growth substrate is then removed, and the epitaxial layer is etched to form islands on the insulator layer. Some of the islands are doped to form an array of infrared sensitive detectors, and a large island is doped to act as CCD region. Electrical leads are fabricated, some to provide drive and output lines for the CCDs, other to provide connections of the detectors to respective CCDs, and yet others to provide common leads for the detectors.
    Type: Grant
    Filed: April 13, 1978
    Date of Patent: March 6, 1979
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Gerard J. King, Joseph F. Martino, Jr.
  • Silicon-insulator-polysilicon infrared imaging device and method of making same
    Patent number: 4061916
    Abstract: A layer of epitaxial silicon is grown on a silicon growth substrate, a thin ayer of silicon dioxide or other suitable insulator is grown (in the case of silicon dioxide) or deposited (for other insulators) on the epitaxial layer, and a thick layer of polysilicon is grown on the dioxide layer. The silicon growth substrate is then removed, and the epitaxial layer is etched to form islands on the insulator layer. Some of the islands are doped to form an array of infrared sensitive detectors, and a large island is doped to act as CCD region. Electrical leads are fabricated, some to provide drive and output lines for the CCDs, other to provide connections of the detectors to respective CCDs, and yet others to provide common leads for the detectors.
    Type: Grant
    Filed: November 1, 1976
    Date of Patent: December 6, 1977
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Gerard J. King, Joseph F. Martino, Jr.