Abstract: The present disclosure relates to a method that includes applying a first perovskite precursor solution to a substrate to form a first liquid film of the first perovskite precursor solution on the substrate; from the first liquid film, forming a first intermediate solid perovskite layer on the substrate; repeating at least once, both the applying and the forming, resulting in the creation of at least one additional intermediate solid perovskite layer; and treating a last intermediate solid perovskite layer, resulting from the at least one additional applying and the at least one additional forming, to create a final solid perovskite layer.

Abstract: An aspect of the present disclosures is a method that includes applying a perovskite precursor solution to a first solid conductor and treating the perovskite precursor solution such that a first portion of the perovskite precursor solution is converted to a first solid perovskite, where the first solid conductor comprises a first charge transport characteristic, which is predominantly p-type or predominantly n-type, and the treating results in the first solid perovskite having a second charge transport characteristic that is substantially the same as the first charge transport characteristic.

Abstract: An aspect of the present disclosure is a method that includes combining a first organic salt (A1X1), a first metal salt (M1(X2)2), a second organic salt (A2X3), a second metal salt (M2Cl2), and a solvent to form a primary solution, where A1X1 and M1(X2)2 are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and A2X3 to M2Cl2 are present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of A1 or A2 may include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: The present disclosure relates to a method that includes positioning a stack that includes at least one of the following layers between a first surface and a second surface: a first perovskite layer and/or a second perovskite layer; and treating the stack for a period of time by at least one of heating the stack or pressurizing the stack, where a device that includes the first surface and the second surface provides the heating and the pressurizing of the stack.

Abstract: The present application discloses devices that includes a perovskite layer, a first layer that includes an oxide, and an interface layer, where the interface layer is positioned between the first layer and the perovskite layer, the interface layer is in physical contact with both the first layer and the perovskite layer, and the interface layer consists essentially of the oxide.

Abstract: An aspect of the present disclosures is a method that includes applying a perovskite precursor solution to a first solid conductor and treating the perovskite precursor solution such that a first portion of the perovskite precursor solution is converted to a first solid perovskite, where the first solid conductor comprises a first charge transport characteristic, which is predominantly p-type or predominantly n-type, and the treating results in the first solid perovskite having a second charge transport characteristic that is substantially the same as the first charge transport characteristic.

Abstract: The present disclosure relates to devices that include a perovskite, where, when a first condition is met, at least a portion of the perovskite is in a first phase that substantially transmits light, when a second condition is met, at least a portion of the perovskite is in a second phase that substantially absorbs light, and the perovskite is reversibly switchable between the first phase and the second phase by reversibly switching between the first condition and the second condition.

Abstract: An aspect of the present disclosure is a method that includes combining a first organic salt (A1X1), a first metal salt) a second organic salt (A2X3), a second metal salt (M2Cl2), and a solvent to form a primary solution, where A1X1 and M1(X2)2 are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and A2X3 to M2Cl2 are present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of A1 or A2 may include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.