Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, an apparatus configured to deposit a plurality of film layers having different compositions on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a process station reactant feed fluidically coupled to a gas inlet of the process station, and fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed, and supplied via a shared path to the process station.

Abstract: Methods and apparatuses are provided herein for independently adjusting flowpath conductance. One multi-station processing apparatus may include a processing chamber, a plurality of process stations in the processing chamber that each include a showerhead having a gas inlet, and a gas delivery system including a junction point and a plurality of flowpaths, in which each flowpath includes a flow element, includes a temperature control unit that is thermally connected with the flow element and that is controllable to change the temperature of that flow element, and fluidically connects one corresponding gas inlet of a process station to the junction point such that each process station of the plurality of process stations is fluidically connected to the junction point by a different flowpath.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 ?, such as less than about 5 ? as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

Abstract: The methods and apparatus disclosed herein concern a process that may be referred to as a “soft anneal.” A soft anneal provides various benefits. Fundamentally, it reduces the internal stress in one or more silicon layers of a work piece. Typically, though not necessarily, the internal stress is a compressive stress. A particularly beneficial application of a soft anneal is in reduction of internal stress in a stack containing two or more layers of silicon. Often, the internal stress of a layer or group of layers in a stack is manifest as wafer bow. The soft anneal process can be used to reduce compressive bow in stacks containing silicon. The soft anneal process may be performed without causing the silicon in the stack to become activated.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: The method and apparatus disclosed herein relate to preparing a stack structure for an electronic device on a semiconductor substrate. A particularly beneficial application of the method is in reduction of internal stress in a stack containing multiple layers of silicon. Typically, though not necessarily, the internal stress is a compressive stress, which often manifests as wafer bow. In some embodiments, the method reduces the internal stress of a work piece by depositing phosphorus doped silicon layers having low internal compressive stress or even tensile stress. The method and apparatus disclosed herein can be used to reduce compressive bow in stacks containing silicon.

Abstract: The method and apparatus disclosed herein relate to preparing a stack structure for an electronic device on a semiconductor substrate. A particularly beneficial application of the method is in reduction of internal stress in a stack containing multiple layers of silicon. Typically, though not necessarily, the internal stress is a compressive stress, which often manifests as wafer bow. In some embodiments, the method reduces the internal stress of a work piece by depositing phosphorus doped silicon layers having low internal compressive stress or even tensile stress. The method and apparatus disclosed herein can be used to reduce compressive bow in stacks containing silicon.

Abstract: The methods and apparatus disclosed herein concern a process that may be referred to as a “soft anneal.” A soft anneal provides various benefits. Fundamentally, it reduces the internal stress in one or more silicon layers of a work piece. Typically, though not necessarily, the internal stress is a compressive stress. A particularly beneficial application of a soft anneal is in reduction of internal stress in a stack containing two or more layers of silicon. Often, the internal stress of a layer or group of layers in a stack is manifest as wafer bow. The soft anneal process can be used to reduce compressive bow in stacks containing silicon. The soft anneal process may be performed without causing the silicon in the stack to become activated.

Abstract: The embodiments herein relate to plasma-enhanced chemical vapor deposition methods and apparatus for depositing silicon nitride on a substrate. The disclosed methods provide silicon nitride films having wet etch rates (e.g., in dilute hydrofluoric acid or hot phosphoric acid) suitable for certain applications such as vertical memory devices. Further, the methods provide silicon nitride films having defined levels of internal stress suitable for the applications in question. These silicon nitride film characteristics can be set or tuned by controlling, for example, the composition and flow rates of the precursors, as well as the RF power supplied to the plasma and the pressure in the reactor. In certain embodiments, a boron-containing precursor is added.

Abstract: A process and catalyst for the direct oxidation of an olefin having three or more carbon atoms, such as propylene, by oxygen to the corresponding olefin oxide, such as propylene oxide. The process involves contacting the olefin with oxygen under reaction conditions in the presence of hydrogen and in the presence of a catalyst. The catalyst comprises gold on a titanosilicate, preferably a microporous or mesoporous titanosilicate, such as, TS-1, TS-2, Ti-beta, Ti-ZSM-48, or Ti-MCM-41. Selectivity to the olefin oxide is high at good conversions of the olefin. The catalyst is readily regenerated, and the time between catalyst regenerations is long.

Abstract: A process and catalyst for the direct oxidation of an olefin having three or more carbon atoms, such as propylene, by oxygen to the corresponding olefin oxide, such as propylene oxide. The process involves contacting the olefin with oxygen under reaction conditions in the presence of hydrogen and in the presence of a catalyst. The catalyst comprises gold on a titanosilicate, preferably a microporous or mesoporous titanosilicate, such as, TS-1, TS-2, Ti-beta, Ti-ZSM-48, or Ti-MCM-41. Selectivity to the olefin oxide is high at good conversions of the olefin. The catalyst is readily regenerated, and the time between catalyst regenerations is long.

Abstract: A process and catalyst for the direct oxidation of an olefin having three or more carbon atoms, such as propylene, by oxygen to the corresponding olefin oxide, such as propylene oxide. The process involves contacting the olefin with oxygen under reaction conditions in the presence of hydrogen and in the presence of a catalyst. The catalyst comprises gold on a titanosilicate, preferably a microporous or mesoporous titanosilicate, such as, TS-1, TS-2, Ti-beta, Ti-ZSM-48, or Ti-MCM-41. Selectivity to the olefin oxide is high at good conversions of the olefin. The catalyst is readily regenerated, and the time between catalyst regenerations is long.

Abstract: A process and catalyst for the direct oxidation of an olefin having three or more carbon atoms, such as propylene, by oxygen to the corresponding olefin oxide, such as propylene oxide. The process involves contacting the olefin with oxygen under reaction conditions in the presence of hydrogen and in the presence of a catalyst. The catalyst comprises gold on a titanosilicate, preferably a microporous or mesoporous titanosilicate, such as, TS-1, TS-2, Ti-beta, Ti-ZSM-48, or Ti-MCM-41. Selectivity to the olefin oxide is high at good conversions of the olefin. The catalyst is readily regenerated, and the time between catalyst regenerations is long.