Abstract: Disclosed herein are systems and methods for managing transaction disputes. Techniques include accessing a transaction pattern model associated with a user account; detecting deviation of a transaction from the transaction pattern model; transmitting, based on the detected deviation, transaction data to a user device; receiving an input at the user device in response to the transmitted data; generating, based on the received input, dispute data; storing the dispute data; monitoring data extracts associated with the user account; detecting, based on the monitoring, a data extract indicating a posted state of a transaction associated with the dispute data; and updating the dispute data based on the data extract indicating the posted state.

Abstract: This disclosure relates to remote control of dialysis machines. In certain aspects, a method includes receiving a request for a network connection from a dialysis machine and establishing the network connection with the dialysis machine. The method also includes receiving, from a client device, a request to access the dialysis machine, authorizing the client device to access the dialysis machine, receiving, from the dialysis machine, information pertaining to an operation of the dialysis machine, and providing, to the client device, the received information.

Abstract: Provided are novel antibody drug conjugates (ADCs), and methods of using such ADCs to treat proliferative disorders.

Abstract: The present invention relates to a process that minimizes the cracking of low-k dielectric polymers. In an example embodiment, on a semiconductor substrate (200), there is a method of forming a composite dielectric disposed on a metal layer passivated with plasma deposited silicon oxide SiOx. The method comprises depositing a first layer of a first predetermined thickness of a spin-on dielectric on the metal layer protected with a plasma deposited silicon oxide SiOx. Next a thin stress relief layer of a second predetermined thickness is disposed on the first layer of spin-on-dielectric. Upon the thin stress-relief layer, a second layer of a third predetermined thickness of spin-on dielectric is deposited. Low-k spin-on dielectrics may include hydrogen silsequioxane (HSQ) and methyl silsequioxane (MSQ).