Abstract: Improved processes are described for the deposition of Cu and group IB metals such as Ag and Au. These processes include thermal CVD, photothermal depositions and photochemical deposition. The gaseous precursor which leads to successful deposition of high quality films at low temperatures includes a cyclopentadienyl ring, a two electron donor ligand, and the group IB metal in a +1 oxidation state. In addition, derivatives of the cyclopentadienyl ring can be used where the substituents on the ring include those selected from alkyl groups, halide groups, and psuedohalide groups. In addition, the two electron donor ligand can be selected from the group consisting of trivalent phosphines, amines and arsines. A representative precursor for the deposition of Cu is triethylphosphine cyclopentadienyl copper (I).

Abstract: A process for preparing tungsten silicide films using low pressure, low temperature chemical vapor deposition to deposit silicon-rich tungsten silicide films. As a source of silicon, higher order silanes, such as disilane and trisilane, are used. The gaseous tungsten source is WF.sub.6. The substrate temperature range is less than about 370.degree. C., while the total pressure range is in the range 0.05-1 Torr. WF.sub.6 flow rates are generally less than 25 sccm, while the higher order silane flow rates are generally less than about 400 sccm.