Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: Apparatuses and methods for measuring substrate temperature are provided. In one or more embodiments, an apparatus for estimating a temperature is provided and includes a plurality of electromagnetic radiation sources positioned to emit electromagnetic radiation toward a reflection plane, and a plurality of electromagnetic radiation detectors. Each electromagnetic radiation detector is positioned to sample the electromagnetic radiation emitted by a corresponding electromagnetic radiation source of the plurality of electromagnetic radiation sources. The apparatus also includes a pyrometer positioned to receive electromagnetic radiation emitted by plurality of electromagnetic radiation sources and reflected from a substrate disposed at a reflection plane and electromagnetic radiation emitted by the substrate. The apparatus includes a processor configured to estimate a temperature of the substrate based on the electromagnetic radiation emitted by the substrate.

Abstract: A support member for a thermal processing chamber is described. The support member has a sol coating on at least one surface. The sol coating contains a material that blocks a desired wavelength or spectrum of radiation from being transmitted by the material of the support member. The sol coating may be a multi-layer structure that may include adhesion layers, transition layers, and cap layers, in addition to radiation-blocking layers.

Abstract: A processing chamber is described. The processing chamber includes a chamber having an interior volume, a light pipe window structure coupled to the chamber, the light pipe window structure having a first transparent plate disposed within the interior volume of the chamber, and a radiant heat source coupled to a second transparent plate of the light pipe window structure in a position outside of the interior volume of the chamber, wherein the light pipe window structure includes a plurality of light pipe structures disposed between the first transparent plate and the second transparent plate.

Abstract: Methods and apparatus for controlling a flow of process material to a deposition chamber.

Abstract: Embodiments of apparatus for providing radiant energy in the form of electromagnetic radiation are provided herein. In some embodiments a radiation source for electromagnetic radiation includes a tubular body formed from a material transparent to electromagnetic radiation; a filament disposed within the tubular body; and a reflective coating disposed on a portion of the tubular body to form a reflective portion, wherein the reflective portion is configured to minimize reflection of electromagnetic radiation emanating from the filament during use back to the filament.

Abstract: Methods and apparatus for controlling a flow of process material to a deposition chamber.

Abstract: Embodiments disclosed herein relate to circular lamp arrays for use in a semiconductor processing chamber. Circular lamp arrays utilizing one or more torroidal lamps disposed in a reflective trough and arranged in a concentric circular pattern may provide for improved rapid thermal processing. The reflective troughs, which may house the torroidal lamps, may be disposed at various angles relative to a surface of a substrate being processed.

Abstract: Apparatuses and methods for measuring substrate temperature are provided. In one or more embodiments, an apparatus for estimating a temperature is provided and includes a plurality of electromagnetic radiation sources positioned to emit electromagnetic radiation toward a reflection plane, and a plurality of electromagnetic radiation detectors. Each electromagnetic radiation detector is positioned to sample the electromagnetic radiation emitted by a corresponding electromagnetic radiation source of the plurality of electromagnetic radiation sources. The apparatus also includes a pyrometer positioned to receive electromagnetic radiation emitted by plurality of electromagnetic radiation sources and reflected from a substrate disposed at a reflection plane and electromagnetic radiation emitted by the substrate. The apparatus includes a processor configured to estimate a temperature of the substrate based on the electromagnetic radiation emitted by the substrate.

Abstract: Embodiments of the present invention generally relate to simplified, high voltage, tungsten halogen lamps for use as source of heat radiation in a rapid thermal processing (RTP) chamber or other lamp heated thermal processing chambers. Embodiments include a lamp design that includes an external fuse while reducing the number of part and expense of prior art lamps. In addition, embodiments of the lamps described herein provide sufficient rigidity to handle compressive forces of inserting the lamps into a heating assembly base, while maintaining a simplified fuse design.

Abstract: Apparatuses and methods for measuring substrate temperature are provided. In one or more embodiments, an apparatus for estimating a temperature is provided and includes a plurality of electromagnetic radiation sources positioned to emit electromagnetic radiation toward a reflection plane, and a plurality of electromagnetic radiation detectors. Each electromagnetic radiation detector is positioned to sample the electromagnetic radiation emitted by a corresponding electromagnetic radiation source of the plurality of electromagnetic radiation sources. The apparatus also includes a pyrometer positioned to receive electromagnetic radiation emitted by plurality of electromagnetic radiation sources and reflected from a substrate disposed at a reflection plane and electromagnetic radiation emitted by the substrate. The apparatus includes a processor configured to estimate a temperature of the substrate based on the electromagnetic radiation emitted by the substrate.

Abstract: Embodiments of the present invention generally relate to simplified, high voltage, tungsten halogen lamps for use as source of heat radiation in a rapid thermal processing (RTP) chamber or other lamp heated thermal processing chambers. Embodiments include a lamp design that includes an external fuse while reducing the number of part and expense of prior art lamps. In addition, embodiments of the lamps described herein provide sufficient rigidity to handle compressive forces of inserting the lamps into a heating assembly base, while maintaining a simplified fuse design.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

Abstract: The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.