Abstract: A backing with corrugations on a first surface. The corrugations are parallel and each has an airspace along an entire longitudinal length. A second surface of the backing includes perforations or scores oriented perpendicularly or parallel to the corrugations. The corrugations or scores are fold lines or frangible tear lines. The airspaces may also include a filter material. The second surface of the backing may be adhered to a corner of a rolling paper on the surface but opposite edge as a gum strip. The corrugations are parallel to the gum strip.

Abstract: A materials processing system comprises a thermal processing chamber and a broadband microwave power source. The power source includes an ovenized small-signal RF circuit, a high power microwave amplifier, and forward and reflected power detectors separated from one another by an isolator. The power detectors are also preferably ovenized. A control system provides control signals to the thermally stabilized VCO and VCA in the small-signal circuit to control output power based on detected forward power compared to demanded forward power. The system may be run in either open-loop or closed-loop modes.

Abstract: A backing with corrugations on a first surface. The corrugations are parallel and each has an airspace along an entire longitudinal length. A second surface of the backing includes perforations or scores oriented perpendicularly or parallel to the corrugations. The corrugations or scores are fold lines or frangible tear lines. The airspaces may also include a filter material. The second surface of the backing may be adhered to a corner of a rolling paper on the surface but opposite edge as a gum strip. The corrugations are parallel to the gum strip.

Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture includes a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.

Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture comprises a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer comprises: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.

Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture contains a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture having a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.

Abstract: A materials processing system comprises a thermal processing chamber and a broadband microwave power source. The power source includes an ovenized small-signal RF circuit, a high power microwave amplifier, and forward and reflected power detectors separated from one another by an isolator. The power detectors are also preferably ovenized. A control system provides control signals to the thermally stabilized VCO and VCA in the small-signal circuit to control output power based on detected forward power compared to demanded forward power. The system may be run in either open-loop or closed-loop modes.

Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture comprises a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer comprises: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.

Abstract: An apparatus for heating a semiconductor wafer includes the following: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the applicator cavity. The fixture comprises a dielectric member providing mechanical support for the wafer and a metallic ring disposed generally parallel to and concentric with the wafer at a selected distance from the wafer, whereby the application of microwave power to the wafer may be adjusted to compensate for edge effects. An associated method for heating a semiconductor wafer comprises the steps of: a. placing the wafer in a microwave applicator cavity; b. supporting the wafer on a fixture, the fixture comprising a dielectric supporting member in contact with the wafer and a metallic ring member disposed generally parallel to and concentric with the wafer at a selected distance from the wafer; and, c.

Abstract: In-situ and post-cure methods of joining optical fibers and optoelectronic components are provided. An in situ method of joining an optical fiber to an optoelectronic component includes positioning an optical fiber and optoelectronic component in adjacent relationship such that light signals can pass therebetween, applying a curable resin having adhesive properties to an interface of the optical fiber and the optoelectronic component, aligning the optical fiber and optoelectronic component relative to each other such that signal strength of light signals passing between the optical fiber and the optoelectronic component is substantially maximized, and irradiating the interface with non-ionizing radiation in RF/microwave energy to rapidly cure the resin.

Abstract: In-situ and post-cure methods of joining optical fibers and optoelectronic components are provided. An in situ method of joining an optical fiber to an optoelectronic component includes positioning an optical fiber and optoelectronic component in adjacent relationship such that light signals can pass therebetween, applying a curable resin having adhesive properties to an interface of the optical fiber and the optoelectronic component, aligning the optical fiber and optoelectronic component relative to each other such that signal strength of light signals passing between the optical fiber and the optoelectronic component is substantially maximized, and irradiating the interface with non-ionizing radiation in RF/microwave energy to rapidly cure the resin.