Patents by Inventor Joseph MEINERS

Joseph MEINERS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Infrared detector having a directly bonded silicon substrate present on top thereof
    Patent number: 11587971
    Abstract: A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiOx, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: February 21, 2023
    Assignee: L3HARRIS CINCINNATI ELECTRONICS CORPORATION
    Inventors: Steven Allen, Michael Garter, Robert Jones, Joseph Meiners, Yajun Wei, Darrel Endres
  • INFRARED DETECTOR HAVING A DIRECTLY BONDED SILICON SUBSTRATE PRESENT ON TOP THEREOF
    Publication number: 20210217790
    Abstract: A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiOx, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.
    Type: Application
    Filed: March 9, 2021
    Publication date: July 15, 2021
    Applicant: L3 Cincinnati Electronics Corporation
    Inventors: Steven ALLEN, Michael GARTER, Robert JONES, Joseph MEINERS, Yajun WEI, Darrel ENDRES
  • Infrared detector having a directly bonded silicon substrate present on top thereof
    Patent number: 10978508
    Abstract: A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiOx, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: April 13, 2021
    Assignee: L3 CINCINNATI ELECTRONICS CORPORATION
    Inventors: Steven Allen, Michael Garter, Robert Jones, Joseph Meiners, Yajun Wei, Darrel Endres
  • INFRARED DETECTOR HAVING A DIRECTLY BONDED SILICON SUBSTRATE PRESENT ON TOP THEREOF
    Publication number: 20200119063
    Abstract: A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiOx, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.
    Type: Application
    Filed: October 16, 2019
    Publication date: April 16, 2020
    Inventors: Steven ALLEN, Michael GARTER, Robert JONES, Joseph MEINERS, Yajun WEI, Darrel ENDRES