Patents by Inventor Joseph Mun

Joseph Mun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6275331
    Abstract: In a WDM optical transmission system employing optical amplifiers in its transmission path, a supervisory signal channel, used for monitoring and controlling the operation of the amplifiers and spectrally separated from the data transmission, may be multiplexed with the data. A construction of amplifier is disclosed which is capable of being upgraded with an upgrade of the transmission system to include additional data handling capacity, for instance data transmission in an additional waveband and/or in the opposite direction, without interruption of the pre-upgrade data transmission path through the amplifiers. This is accomplished by the use of channel dropping and insertion filters disposed so that the amplifying data transmission path extends via the drop/insertion channel of those filters.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: August 14, 2001
    Assignee: Nortel Networks Limited
    Inventors: Kevan P Jones, Roger M Gibb, Robert A Baker, Martin P Poettcker, Mark E Bray, Barrie Flintham, James Regan, Toby J Reid, Alan A Solheim, Robert W Keys, Mark R Hinds, Joseph Mun, Nigel E Jolley, Alan Robinson, Jonathan P King, Simon P Parry
  • Patent number: 4745445
    Abstract: A high frequency, e.g. millimeter wave, semiconductor diode structure includes a buried layer of n.sup.+ -type material and a surface layer of lightly doped n-type material on which a Schottky barrier contact is disposed. The n.sup.+ -type layer provides a low series resistance thus permitting high frequency operation. The structure is compatible with MESFET processing techniques and may thus be incorporated in an integrated circuit.
    Type: Grant
    Filed: December 22, 1986
    Date of Patent: May 17, 1988
    Assignee: ITT Gallium Arsenide Technology Center, a Division of ITT Corporation
    Inventors: Joseph Mun, Graeme K. Barker, Mohamed H. Badawi
  • Patent number: 4661836
    Abstract: A millimeter wave integrated circuit (MIC) includes both low power components and high power components, e.g. Gunn diodes, disposed on a common semi-insulating semi-conductor substrate. Each high power component is formed in an active epitaxial layer and is provided with a heat sink comprising a thermally conductive material deposited in an opening in the back of the substrate below the compound. The low power components are isolated by an implanted proton layer.
    Type: Grant
    Filed: September 25, 1985
    Date of Patent: April 28, 1987
    Assignee: ITT Industries Inc.
    Inventor: Joseph Mun
  • Patent number: D1018487
    Type: Grant
    Filed: April 19, 2023
    Date of Patent: March 19, 2024
    Assignee: Crestron Electronics, Inc.
    Inventors: Joseph Amarosa, Kian-Mun Kong, Michael Fonti, Johannes Ott, Xiaofeng Xu