Abstract: The disclosure relates to simplifying the integration of a peripheral with a vehicle. The complexity of modern vehicle electronics means that integration of a peripheral with a vehicle requires a reconfiguration of the vehicle electronics in order for the resultant upfitted vehicle to function as desired by the user. This restricts the set of users and enterprises which are able to successfully integrate a new peripheral with a vehicle. To make the task more approachable, a software application is described which presents a user with a graphical user interface enabling them to specify, at a high-level, rules of behavior for the upfitted vehicle. From the user's inputs via the graphical user interface, the application creates configuration data to be applied to the vehicle electronics in order to produce the desired behavior in the upfitted vehicle.

Abstract: Systems and methods are described for operating a peripheral device of a vehicle. Control circuitry determines whether the peripheral device is connected to a vehicle controller. Control circuitry receives operational settings for the peripheral device, e.g., in response to determining that the peripheral device is connected to the vehicle controller. The vehicle controller is used to control the peripheral device using the received operational settings.

Abstract: A process comprising: (a) contacting a feed stream comprising a di-alkyltin dihalide distillate with an alkylation agent, thereby forming an alkylated mixture comprising R4Sn and optionally R3SnX, R2SnX2, or mixtures thereof, where R is a linear, branched or cyclic C1-C20 alkyl, and X is a halide; (b) contacting the alkylated mixture with SnX4, thereby forming an alkyltin halide mixture comprising RSnX3, R2SnX2, and optionally impurities, R3SnX or mixtures thereof; (c) separating by distillation the alkyltin halide mixture to form a mono-alkyltin halide-rich distillate stream and a liquid di-alkyltin halide-rich bottoms stream comprising R2SnX2, RSnX3, and optionally impurities, R3SnX, or mixtures thereof; (d) separating by distillation the di-alkyltin halide-rich bottoms stream, thereby forming the liquid di-alkyltin dihalide distillate comprising R2SnX2, and optionally RSnX3, R3SnX or mixtures thereof, and an impurities-rich bottoms stream; and (e) recycling a part, xrecycle, of the liquid di-alkyltin di

Abstract: A fluid storage and dispensing system including a vessel containing a low heel carbon sorbent having fluid adsorbed thereon, with the system arranged to effect desorption of the fluid from the sorbent for dispensing of fluid on demand. The low heel carbon sorbent preferably is characterized by at least one of the following characteristics: (i) Heel, measured for gaseous arsine (AsH3) at 20° C. at 20 Torr, of not more than 50 grams AsH3 per liter of bed of the sorbent material; (ii) Heel, measured for gaseous boron trifluoride (BF3) at 20° C. at 20 Torr, of not more than 20 grams boron trifloride per liter of bed of the sorbent material; (iii) Heel, measured for gaseous germanium tetrafluoride (GeF4) at 20° C. at 20 Torr, of not more than 250 grams AsH3 per liter of bed of the sorbent material; (iv) Heel, measured for gaseous arsenic pentafluoride (AsF5) at 20° C.

Abstract: A fluid storage and dispensing system including a vessel containing a low heel carbon sorbent having fluid adsorbed thereon, with the system arranged to effect desorption of the fluid from the sorbent for dispensing of fluid on demand. The low heel carbon sorbent preferably is characterized by at least one of the following characteristics: (i) Heel, measured for gaseous arsine (AsH3) at 20° C. at 20 Torr, of not more than 50 grams AsH3 per liter of bed of the sorbent material; (ii) Heel, measured for gaseous boron trifluoride (BF3) at 20° C at 20 Torr, of not more than 20 grams boron trifluoride per liter of bed of the sorbent material; (iii) Heel, measured for gaseous germanium tetrafluoride (GeF4) at 20° C. at 20 Torr, of not more than 250 grams AsH3 per liter of bed of the sorbent material; (iv) Heel, measured for gaseous arsenic pentafluoride (AsF5) at 20° C.