Abstract: A method for electrochemical etching of a semiconductor material using positive potential dissolution (PPD) in solutions that do not contain hydrofluoric acid (HF-free solutions). The method includes immersing an as-cut semiconductor material in an etching solution, and positive biasing at atypically highly positive (anodic) potentials, thereby significantly increasing the value of the anodic current density (measured as A/cm2) of the semiconductor material. The application of positive biasing at atypically highly positive (anodic) potentials, is combined with specifically controlling and directing illumination on the semiconductor material surface contacted and wetted by the etching solution. This is done for a necessary and sufficient period of time to enable a positive synergistic effect on the rate and extent of etching of the semiconductor material therefrom.

Abstract: Embodiments of the invention may further provide a contact ring for an electrochemical plating system. The contact generally includes a substrate receiving member having a substrate support surface formed thereon, a plurality of electrical contact pins extending from the substrate support surface, a first seal positioned on the substrate support surface radially inward of the plurality of electrical contacts, and a second seal positioned radially outward of the plurality of electrical contacts. Additionally, the contact ring generally includes a fluid inlet configured to supply a fluid to a volume between the first seal and the second seal.

Abstract: A method for electrochemical etching of a semiconductor material using positive potential dissolution (PPD) in hydrofluoride (HF)-free solutions. The method includes subjecting one of: a polished material; and an as-cut semiconductor material to an etching solution. The method also includes positive biasing at atypically highly positive (anodic) potentials. The specifically controlled and directed illumination of the positively biased semiconductor material surface contacted and wetted by the etching solution significantly increases the value of the anodic current density (A/cm2) of the semiconductor material. The application of positive biasing at atypically highly positive (anodic) potentials, is combined with specifically controlling and directing illumination by light of the semiconductor material surface contacted and wetted by the etching solution.

Abstract: A method for immersing a substrate into a plating solution. In one embodiment, the method includes applying a first waveform to the substrate as the substrate is being immersed into the plating solution, stopping the application of the first waveform to the substrate as soon as the substrate is fully immersed inside the plating solution, and applying a second waveform to the substrate prior to the substrate being situated into a plating position.

Abstract: Embodiments of the invention provide a method for conditioning contacts of an electrochemical metal plating system. The method includes deplating the contacts by supplying a reversed biased energy and monitoring electrical measurements of the plating system in real-time such that the endpoint of a deplating process can be determined. In different embodiments, the method includes the use of a constant current or voltage, variable current or voltage, or combinations thereof for conditioning the contacts.

Abstract: Embodiments of the present invention generally relate to a method and apparatus for planarizing a substrate by electropolishing techniques. Certain embodiments of an electropolishing apparatus include a contact ring adapted to support a substrate, a cell body adapted to hold an electropolishing solution, a fluid supply system adapted to provide the electropolishing solution to the cell body, a cathode disposed within the cell body, a power supply system in electrical communication with the contact ring and the cathode, and a controller coupled to at least the fluid supply system and the power supply system. The controller may be adapted to provide a first set of electropolishing conditions to form a boundary layer between the substrate and the electropolishing solution to an initial thickness and may be adapted to provide a second set of electropolishing conditions to control the boundary layer to a subsequent thickness less than or equal to the initial thickness.

Abstract: Texturing a semiconductor material using negative potential dissolution (NPD), by applying highly negative (cathodic) potentials during conditions of wet etching, and a textured semiconductor material formed therefrom. Semiconductor material is subjected to wet etching conditions, negative biasing at more negative than ?60 V, and, specifically controlled and directed illumination by optically processed non-ambient light, resulting in significant increase in values of cathodic current density, and, rate and extent of texturing, of the semiconductor material as a function of time. As cut unpolished semiconductor material is subjected to wet etching conditions and negative biasing, during non-specifically controlled and directed illumination by unprocessed ambient light.

Abstract: Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

Abstract: Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

Abstract: A higher applied potential may be provided to a consumable anode to reduce sludge formation during electroplating. For example, a higher applied potential may be provided to a consumable anode by decreasing the exposed surface area of the anode to the electrolyte solution in the electroplating cell. The consumable anode may comprise a single anode or an array of anodes coupled to the positive pole of the power source in which the exposed surface area of the anode is less than an exposed surface area of the cathode to the electrolyte solution. In another example, a higher applied potential may be provided to a consumable anode by increasing the potential of the electroplating cell.

Abstract: Embodiments of the invention provide a method and formulations for preventing foam formation inside a plating apparatus prior to or during plating a material on a substrate. In one embodiment, a method for preventing foam formation inside a plating apparatus designed for plating a material on a substrate includes providing an electrolyte solution containing at least one antifoaming agent, at least one metal ion source, and a supporting electrolyte. The method further includes placing the substrate onto a substrate holder of the plating apparatus, immersing the substrate in the electrolyte solution, and depositing the material onto the substrate.

Abstract: Embodiments of the invention may further provide a contact ring for an electrochemical plating system. The contact generally includes a substrate receiving member having a substrate support surface formed thereon, a plurality of electrical contact pins extending from the substrate support surface, a first seal positioned on the substrate support surface radially inward of the plurality of electrical contacts, and a second seal positioned radially outward of the plurality of electrical contacts. Additionally, the contact ring generally includes a fluid inlet configured to supply a fluid to a volume between the first seal and the second seal.

Abstract: Generally, a method and apparatus for electro-chemical polishing a metal layer disposed on a substrate is provided. In one embodiment, the electro-chemical polishing apparatus generally includes a substrate support having a plurality of contact members, a cathode and at least one nozzle. The nozzle is adapted to centrally dispose a polishing fluid on the substrate supported by the substrate support. The cathode is adapted to couple the polishing fluid to a negative terminal of a power source. A positive terminal of the power source is electrically coupled through the contact members to the conductive layer of the substrate. The nozzle creates a turbulent flow in the portion of the polishing fluid boundary layer proximate the center of the substrate which enhances the polishing rate at the center of the substrate.

Abstract: Methods and apparatus are provided for forming a metal or metal suicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

Abstract: Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

Abstract: Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

Abstract: Embodiments of the present invention generally relate to a method and apparatus for planarizing a substrate by electropolishing techniques. Certain embodiments of an electropolishing apparatus include a contact ring adapted to support a substrate, a cell body adapted to hold an electropolishing solution, a fluid supply system adapted to provide the electropolishing solution to the cell body, a cathode disposed within the cell body, a power supply system in electrical communication with the contact ring and the cathode, and a controller coupled to at least the fluid supply system and the power supply system. The controller may be adapted to provide a first set of electropolishing conditions to form a boundary layer between the substrate and the electropolishing solution to an initial thickness and may be adapted to provide a second set of electropolishing conditions to control the boundary layer to a subsequent thickness less than or equal to the initial thickness.

Abstract: A higher applied potential may be provided to a consumable anode to reduce sludge formation during electroplating. For example, a higher applied potential may be provided to a consumable anode by decreasing the exposed surface area of the anode to the electrolyte solution in the electroplating cell. The consumable anode may comprise a single anode or an array of anodes coupled to the positive pole of the power source in which the exposed surface area of the anode is less than an exposed surface area of the cathode to the electrolyte solution. In another example, a higher applied potential may be provided to a consumable anode by increasing the potential of the electroplating cell.

Abstract: There is provided a process for etching a semiconductor material, comprising the steps of: providing an electrochemical cell containing an etching electrolyte, the etching electrolyte being selected from the group of acidic electrolyte solutions, alkaline solutions, neutral solutions, and molten electrolytes; immersing the semiconductor material in the etching electrolyte, whereby at least one surface of the semiconductor material contacts the etching electrolyte; thereafter negatively biasing the semiconductor material; and while continuing to negatively bias the semiconductor material, illuminating at least part of the at least one surface of the semiconductor material which contacts the etching electrolyte with light selected from the group of ultraviolet, visible, and infrared light. There is also provided an apparatus for effecting the process of the invention, as well as semiconductor materials so etched.

Abstract: Generally, a method and apparatus for electrochemical polishing a metal layer disposed on a substrate is provided. In one embodiment, the electrochemical polishing apparatus generally includes a substrate support having a plurality of contact members, a cathode and at least one nozzle. The nozzle is adapted to centrally dispose a polishing fluid on the substrate supported by the substrate support. The cathode is adapted to couple the polishing fluid to a negative terminal of a power source. A positive terminal of the power source is electrically coupled through the contact members to the conductive layer of the substrate. The nozzle creates a turbulent flow in the portion of the polishing fluid boundary layer proximate the center of the substrate which enhances the polishing rate at the center of the substrate.