Abstract: Thermally decomposable gap-fill materials are disclosed that fill small features and are completely removed by a high-temperature bake after processing. These materials are self-crosslinkable polymers. Potential applications of these materials include use as sacrificial gap-fill materials for creating air gaps, as well as protection of high-aspect-ratio or other delicate microelectronic features during processing steps.

Abstract: Materials and methods to immobilize photoacid generators on semiconducting substrates are provided. PAG-containing monomers are copolymerized with monomers to allow the polymer to bind to a surface, and optionally copolymerized with monomers to enhance solubility to generate PAG-containing polymers. The PAG-containing monomers can be coated onto a surface, where the immobilized PAGs can then be used to pattern materials coated on top of the immobilized PAGs, allowing direct patterning without the use of a photoresist, thereby reducing process steps and cost. The disclosed materials and processes can be used to produce conformal coatings of controlled thicknesses.

Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

Abstract: Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

Abstract: Materials and methods to immobilize photoacid generators on semiconducting substrates are provided. PAG-containing monomers are copolymerized with monomers to allow the polymer to bind to a surface, and optionally copolymerized with monomers to enhance solubility to generate PAG-containing polymers. The PAG-containing monomers can be coated onto a surface, where the immobilized PAGs can then be used to pattern materials coated on top of the immobilized PAGs, allowing direct patterning without the use of a photoresist, thereby reducing process steps and cost. The disclosed materials and processes can be used to produce conformal coatings of controlled thicknesses.

Abstract: The present invention is broadly concerned with materials, processes, and structures that allow an underlayer to be imaged directly using conventional lithography, thus avoiding the photoresist processing steps required by prior art directed self-assembly (DSA) processes. The underlayers can be tailored to favor a selected block of the DSA block co-polymers (BCP), depending on the pattern, and can be formulated either to initially be neutral to the BCP and switch to non-neutral after photoexposure, or can initially be non-neutral to the BCP and switch to neutral after exposure. These materials allow fast crosslinking to achieve solvent resistance and possess good thermal stability.

Abstract: Photosensitive, developer-soluble bottom anti-reflective coatings are described. Compositions and methods of forming the same are also disclosed along with resulting microelectronic structures. The anti-reflective compositions comprise a multi-functional epoxy compound having multiple epoxy moieties pendant therefrom and one or more crosslinkable chromophores bonded thereto. The compounds are dispersed or dissolved in a solvent system with a vinyl ether crosslinker and can be used to create crosslinkable and de-crosslinkable coatings for microelectronics fabrication.

Abstract: The present invention is broadly concerned with materials, processes, and structures that allow an underlayer to be imaged directly using conventional lithography, thus avoiding the photoresist processing steps required by prior art directed self-assembly (DSA) processes. The underlayers can be tailored to favor a selected block of the DSA block co-polymers (BCP), depending on the pattern, and can be formulated either to initially be neutral to the BCP and switch to non-neutral after photoexposure, or can initially be non-neutral to the BCP and switch to neutral after exposure. These materials allow fast crosslinking to achieve solvent resistance and possess good thermal stability.

Abstract: Photosensitive, developer-soluble bottom anti-reflective coatings are described. Compositions and methods of forming the same are also disclosed along with resulting microelectronic structures. The anti-reflective compositions comprise a multi-functional epoxy compound having multiple epoxy moieties pendant therefrom and one or more crosslinkable chromophores bonded thereto. The compounds are dispersed or dissolved in a solvent system with a vinyl ether crosslinker and can be used to create crosslinkable and de-crosslinkable coatings for microelectronics fabrication.

Abstract: Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomeric units having adamantyl groups. The compositions also preferably comprise a crosslinker, such as a vinyl ether crosslinking agent, dispersed or dissolved in the solvent system with the polymer. In some embodiments, the composition can also comprise a photoacid generator (PAG) and/or a quencher. The bottom anti-reflective coating compositions are thermally crosslinkable, but can be decrosslinked in the presence of an acid to be rendered developer soluble.

Abstract: Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomeric units having adamantyl groups. The compositions also preferably comprise a crosslinker, such as a vinyl ether crosslinking agent, dispersed or dissolved in the solvent system with the polymer. In some embodiments, the composition can also comprise a photoacid generator (PAG) and/or a quencher. The bottom anti-reflective coating compositions are thermally crosslinkable, but can be decrosslinked in the presence of an acid to be rendered developer soluble.