Abstract: An anti-diffusion substrate structure includes a substrate, a substrate circuit layer, and a chip. The substrate has multiple through holes. Within each of the through holes includes a first metal layer and an anti-diffusion layer plated on the first metal layer. The anti-diffusion layer is an Electroless Palladium Immersion Gold (EPIG) layer or an Electroless Nickel Electroless Palladium Immersion Gold (ENEPIG) layer. The substrate circuit layer is mounted on the substrate and extended on the anti-diffusion layer within each of the through holes. The substrate circuit layer is made of a second metal layer, and a composition of the second metal layer is different from a composition of the first metal layer. The chip is electrically connected to the substrate circuit layer. The anti-diffusion layer is able to better prevent material of the first metal layer from migrating or diffusing to the second metal layer.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: Embodiments of this application disclose a full-duplex self-interference cancellation method and apparatus. The full-duplex self-interference cancellation method may be applied to the field of radio frequency self-interference cancellation in a full-duplex scenario. The full-duplex self-interference cancellation method is implemented by a full-duplex self-interference cancellation apparatus with self-interference reconstruction modules of two levels, and the full-duplex self-interference cancellation apparatus is implemented by a terminal. This greatly reduces hardware implementation complexity and costs of the second self-interference reconstruction module, and improves a full-duplex self-interference cancellation capability.

Abstract: A composite metal foil and a method of manufacturing the same are provided. The composite metal foil includes at least a first metal layer and a second metal layer. The first metal layer is copper foil, nickel foil, stainless steel foil, or a combination thereof. The second metal layer is disposed on a surface of the first metal layer. A contact angle of a surface of the second metal layer to liquid lithium metal is lower than 90 degrees.

Abstract: An adjustable awning has no longitudinal linkage, which makes efficient use of space, can be assembled with a collapsible roof as a whole, increasing the function of the collapsible roof, and can be unfolded together with the collapsible roof, controlled by a mechanism inside the collapsible roof, and the control mechanism can be adjusted to select whether the awning is linked to the roof or not. The horizontal adjustable awning includes an internal control mechanism, a main transmission mechanism and a folding mechanism. The internal control mechanism includes a spring roller, a drive belt, a belt end block and a block snap; the main transmission mechanism includes a pulley, a filament rod, a shade cloth mechanism, a bearing housing, a rack and pinion mechanism and a gear housing; the folding mechanism includes two rotating pushers, two articulated sliders and a protective plate.

Abstract: A method for manufacturing a semiconductor device includes forming a metal layer in a substrate and sequentially forming a barrier layer and an insulating layer on the substrate. The method includes performing a first etching step to form an opening in the insulating layer, and the opening does not expose the barrier layer. After the first etching step, a gap-filling layer is formed on the insulating layer and fills the opening. The method includes performing a second etching step to form a first via communicating with the opening in the gap-filling layer, and an upper portion of the opening is widened to form a trench. The method includes performing a third etching step to remove the gap-filling layer in a bottom of the opening and to deepen both the trench and the opening. The method includes forming a second via communicating with the opening to expose the metal layer.

Abstract: In an embodiment, a structure includes: a nano-structure; an epitaxial source/drain region adjacent the nano-structure; a gate dielectric wrapped around the nano-structure; a gate electrode over the gate dielectric, the gate electrode having an upper portion and a lower portion, a first width of the upper portion increasing continually in a first direction extending away from a top surface of the nano-structure, a second width of the lower portion being constant along the first direction; and a gate spacer between the gate dielectric and the epitaxial source/drain region.

Abstract: A circuit board structure includes a first sub-circuit board, a second sub-circuit board, and a third sub-circuit board. The first sub-circuit board has an upper surface and a lower surface opposite to each other, and includes at least one first conductive through hole. The second sub-circuit board is disposed on the upper surface of the first sub-circuit board and includes at least one second conductive through hole. The third sub-circuit board is disposed on the lower surface of the first sub-circuit board and includes at least one third conductive through hole. At least two of the first conductive through hole, the second conductive through hole, and the third conductive through hole are alternately arranged in an axial direction perpendicular to an extending direction of the first sub-circuit board. The first, second and third sub-circuit boards are electrically connected to one another.

Abstract: A method of designing a circuit is provided. The method includes: providing a circuit; selecting a first NMOS fin field-effect transistor (FinFET) in the circuit; and replacing the first NMOS FinFET having a first fin number with a second NMOS FinFET having a second fin number and a third NMOS FinFET having a third fin number, wherein the sum of the second fin number and the third fin number is equal to the first fin number.

Abstract: A method is provided. The method includes receiving a first dimension set, extracting a first latent feature set from the first dimension set, training a first base predictor based on the first feature set, generating a second dimension set based on the first dimension set, the second dimension set having fewer dimensions than the first dimension set, extracting a second latent feature set from the second dimension set, training a second base predictor based on the second feature set, and generating a traffic prediction based on the first base predictor and the second base predictor.

Abstract: A swivel bracket assembly and a method for installing an electrical component to a riser bracket assembly are disclosed. The swivel bracket assembly includes a baseplate; a swivel bracket rotatably attached to the baseplate, the swivel bracket being rotatable between an open position and a closed position; and pads attached to the swivel bracket, at least one of the pads being configured to contact and support the electrical component attached to the riser bracket assembly when the swivel bracket is in the closed position. A method for installing an electrical component to a riser bracket assembly includes receiving the electrical component into a slot of a riser circuit board and pivoting a swivel bracket rotatable coupled to a baseplate from an open position to a closed position to support the electrical component secured to the riser bracket assembly.

Abstract: Disclosed is a method of fabricating a contact in a semiconductor device. The method includes: receiving a semiconductor structure having an opening into which the contact is to be formed; forming a metal layer in the opening; forming a bottom anti-reflective coating (BARC) layer in the opening; performing implanting operations with a dopant on the BARC layer and the metal layer, the performing implanting operations including controlling an implant energy level and controlling an implant dosage level to form a crust layer with a desired minimum depth on top of the BARC layer; removing unwanted metal layer sections using wet etching operations, wherein the crust layer and BARC layer protect remaining metal layer sections under the BARC layer from metal loss during the wet etching operations; removing the crust layer and the BARC layer; and forming the contact in the opening over the remaining metal layer sections.

Abstract: Provided are pamoate salts of ketamine having a stoichiometry of 2:1 of ketamine to pamoate, including R, S-ketamine pamoate, S-ketamine pamoate, or R-ketamine pamoate, and crystalline or amorphous forms of the pamoate salts, and having excellent safety and properties for pharmaceutical applications. Also provided are pharmaceutical compositions including the pamoate salts of ketamine and their uses in treating a CNS disease or serving as an anesthetic.

Abstract: A semiconductor device includes a forksheet structure extending lengthwise along a first direction over a substrate. The forksheet structure has a dielectric wall separating a stack of n-type nanostructures from a stack of p-type nanostructures. A gate structure is over the forksheet structure, the gate structure extending lengthwise along a second direction perpendicular to the first direction. The gate structure is in direct contact with the stack of n-type and p-type nanostructures and in direct contact with the dielectric wall. A first gate interconnect is over and in direct contact with the gate structure and a first gate via is over and in direct contact with the first gate interconnect.

Abstract: Embodiments of the present disclosure relates to a semiconductor device structure. The structure includes a source/drain epitaxial feature disposed over a substrate, a first interlayer dielectric (ILD) disposed over the source/drain epitaxial feature, a second ILD disposed over the first ILD. The second ILD includes a first dopant species having an atomic radius equal to or greater than silicon and a second dopant species having an atomic mass less than 15. The structure also includes a first conductive feature disposed in the second ILD, and a second conductive feature disposed over the source/drain epitaxial feature, the second conductive feature extending through the first ILD and in contact with the first conductive feature.

Abstract: Systems, methods, and devices are described herein for integrated circuit (IC) layout validation. A plurality of IC patterns are collected which include a first set of patterns capable of being manufactured and a second set of patterns incapable of being manufactured. A machine learning model is trained using the plurality of IC patterns. The machine learning model generates a prediction model for validating IC layouts. The prediction model receives data including a set of test patterns comprising scanning electron microscope (SEM) images of IC patterns. Design violations associated with an IC layout are determined based on the SEM images and the plurality of IC patterns. A summary of the design violations is provided for further characterization of the IC layout.

Abstract: A wireless communication device (12) is configured for random access to a wireless communication network (10). The N wireless communication device (12) transmits, to the wireless communication network (10), a random access preamble (14) in a random access channel occasion (18) that comprises one or more symbols. The wireless communication device (12) monitors for a response (20) to the random access preamble (14) within a response window (24). The response window (24) starts in an earliest control resource set (22-2) that begins at least a minimum number (Dmin) of symbols after the last symbol (18L) of the random access channel occasion (18), wherein the minimum number of symbols is greater than one.

Abstract: Systems and methods for supporting Physical Uplink Control Channel (PUCCH) transmissions of reduced bandwidth User Equipments (UEs) to efficiently coexist with regular UEs in a network. In some embodiments, a method performed by a UE comprises obtaining a PUCCH configuration for reduced bandwidth UEs wherein there is a dependency between the PUCCH configuration for reduced bandwidth UEs and a PUCCH configuration for non-reduced bandwidth UEs. The method further comprises transmitting a PUCCH in accordance with the PUCCH configuration for reduced bandwidth UEs.

Abstract: A method for monitoring paging is provided. The method is performed by a user equipment (UE) and includes actions of receiving a first Physical Downlink Control Channel (PDCCH) addressed to a first Radio Network Temporary Identifier (RNTI), and stopping monitoring a second PDCCH addressed to a second RNTI if the first PDCCH includes a paging stop indicator, where the second RNTI is the same as the first RNTI.