Abstract: A SONOS memory device, and a method of manufacturing the same, includes a substrate and a multifunctional device formed on the substrate. The multifunctional device performs both switching and data storing functions. The multifunctional device includes first and second impurities areas, a channel formed between the first and second impurities areas, and a stacked material formed on the channel for data storage. The stacked material for data storage is formed by sequentially stacking a tunneling oxide layer, a memory node layer in which data is stored, a blocking layer, and an electrode layer.

Abstract: In the non-volatile memory device, a first isolation layer is formed to have a plurality of depressions each having a predetermined depth from an upper surface of the semiconductor substrate. A fin type first active region is defined by the first isolation layer and has one or more inflected portions at its sidewalls exposed from the first isolation layer, where the first active region is divided into an upper part and a lower part by the inflected portions and a width of the upper part is narrower than that of the lower part. A tunneling insulation layer is formed on the first active region. A storage node layer is formed on the tunneling insulation layer. Also, a blocking insulation layer is formed on the storage node layer, and a control gate electrode is formed on the blocking insulation layer.

Abstract: A silicon-oxide-nitride-oxide-silicon (SONOS) memory device includes a memory type transistor including a gate with a SONOS structure on a semiconductor substrate. The gate is formed by sequentially stacking a tunneling oxide layer, a memory node structure including a trap site having nano-sized trap elements in which charges passing through the tunneling oxide layer are trapped, and a gate electrode. The nano-sized trap elements may be a crystal layer composed of nanocrystals that are separated from one another to trap the charges. The memory node structure may include additional memory node layers which are isolated from the nano-sized trap elements.

Abstract: A semiconductor device has a gate contact structure, including a semiconductor substrate, a polycrystalline silicon layer used as a gate electrode of a transistor, a middle conductive layer, a top metal layer having an opening exposing the polycrystalline silicon layer, and a contact plug directly contacting the polycrystalline silicon layer through the opening.

Abstract: An integrated circuit device includes a fast-locking phase locked loop (PLL). This PLL includes a phase-frequency detector and first and second charge pumps, which are responsive to first and second control signals generated by the phase-frequency detector. The first and second charge pumps have different current sourcing characteristics when the first control signal is active and different current sinking characteristics when the second control signal is active.

Abstract: A charge pump generates a first sub up current and a second sub up current that vary complementarily with a change in a voltage at an output terminal. The charge pump also generates a first sub down current and a second sub down current that vary complementarily with the change in the voltage at the output terminal. With such complementary relationships, the total up/down currents remain substantially constant and balanced with the change in the voltage at the output terminal.

Abstract: In a clock and data recovery circuit and method, the clock and data recovery circuit comprises a clock signal generator for generating N clock signals, each clock signal having phase difference of 360/N×K from each other, wherein the N denotes an integer and the K denotes an integer from 0 to N?1, a phase selector for generating an I+2th clock signal out of the N clock signals as a recovered clock signal if an Ith clock signal is on a first state and an I+1th clock signal is on a second state when logic level transition of a received data is detected, wherein the I denotes an integer from 1 to N, and a recovered data generator for generating a recovered data synchronized with the recovered clock signal by using the received data in response to the recovered clock signal output from the phase selector.

Abstract: A silicon-oxide-nitride-oxide-silicon (SONOS) memory device includes a memory type transistor including a gate with a SONOS structure on a semiconductor substrate. The gate is formed by sequentially stacking a tunneling oxide layer, a memory node structure including a trap site having nano-sized trap elements in which charges passing through the tunneling oxide layer are trapped, and a gate electrode. The nano-sized trap elements may be a crystal layer composed of nanocrystals that are separated from one another to trap the charges. The memory node structure may include additional memory node layers which are isolated from the nano-sized trap elements.

Abstract: A voltage-controlled oscillator includes a bias circuit and a delay circuit. The bias circuit may generate a bias voltage signal pair having levels that are based on the voltage level of an input voltage signal and that are constrained by the values of a maximum current signal and a minimum current signal that are generated in the bias circuit. The delay circuit generates an output signal having a frequency that varies in response to the bias voltage signal pair. Because an operating frequency range of a voltage-controlled oscillator VCO is limited by a bias circuit, the VCO can operate with reduced gain and can limit the maximum operating frequency to a predetermined level. The VCO may also include a PTAT current generator in the bias circuit which can allow the VCO to compensate for variations of the VCO output frequency based on temperature.

Abstract: A pre-emphasis apparatus of a LVDS transmitter includes a pre-emphasis signaling generation unit and a pre-emphasis current output unit. The pre-emphasis signal generation unit generates a pre-emphasis pulse signal based on N parallel data signals received from an external source and N-phase clock signals received from a phase locked loop, where N is an integer greater than 1. The pre-emphasis current output unit provides an additional current for a pre-emphasis operation to a current source of a LVDS driver in response to the pre-emphasis pulse signal generated by the pre-emphasis pulse signal generation unit. The pulse signal for pre-emphasis is generated based on the parallel data signals received from the external source and the multi-phase clock signals, which are output from the phase locked loop for performing a sampling of the parallel data signals.

Abstract: Disclosed is a negative active material composition for a rechargeable lithium battery, a method of producing a negative electrode for a rechargeable lithium battery using the same, and a rechargeable lithium battery using the same. The negative active material composition includes a negative active material, an additive capable of forming a surface electrolyte interface film on a negative electrode during charge and discharge, a binder, and an organic solvent.

Abstract: A method of programming a silicon oxide nitride oxide semiconductor (SONOS) memory device is provided. The SONOS memory device includes a substrate, first and second impurity regions spaced apart on the substrate, a gate oxide layer formed over the substrate between the first and second impurity regions, a trap layer formed over the gate oxide layer, an insulation layer formed over the trap layer, and a gate electrode formed over the insulation layer. The method of programming the SONOS device includes writing data into the SONOS memory device by applying a first voltage to the first impurity region, a gate voltage to the gate electrode, and a second voltage to the second impurity region, where the second voltage is a negative voltage.

Abstract: A single electron transistor having a memory function and a fabrication method thereof are disclosed. In the single electron transistor, a first substrate and an insulation film are sequentially stacked, a second substrate is stacked on the insulation film and includes a source region, a channel region, and a drain region, a tunneling film is formed on the second substrate, at least two trap layers are formed on the tunneling film and are separated by an interval such that at least one quantum dot may be formed in a same interval in the channel region, and a gate electrode is formed to contact the at least two trap layers and the tunneling film between the at least two trap layers. Because the single electron transistor is simple and includes a single gate electrode, a fabricating process and an operational circuit thereof may be simplified, and power consumption may be reduced.

Abstract: Provided is a nonvolatile memory device which includes a tunneling insulating film formed on a semiconductor substrate, a storage node formed on the tunneling insulating film, a blocking insulating film formed on the storage node, and a control gate electrode formed on the blocking insulating film. The storage node includes at least two trapping films having different trap densities, and the blocking insulating film has a dielectric constant greater than that of the silicon oxide film.

Abstract: A single electron transistor having a memory function and a fabrication method thereof are disclosed. In the single electron transistor, a first substrate and an insulation film are sequentially stacked, a second substrate is stacked on the insulation film and includes a source region, a channel region, and a drain region, a tunneling film is formed on the second substrate, at least two trap layers are formed on the tunneling film and are separated by an interval such that at least one quantum dot may be formed in a same interval in the channel region, and a gate electrode is formed to contact the at least two trap layers and the tunneling film between the at least two trap layers. Because the single electron transistor is simple and includes a single gate electrode, a fabricating process and an operational circuit thereof may be simplified, and power consumption may be reduced.

Abstract: Provided are example embodiments of fabrication methods and resulting structures suitable for use in nonvolatile memory devices formed on semiconductor substrates. The example embodiments of the gate structures include a first insulating film formed on the semiconductor substrate, a storage node formed on the first insulating film for storing charges, a second insulating film formed on the storage node, a third insulating film formed on the second insulating film, and a gate electrode formed on the third insulating film. The insulating films are selected whereby the dielectric constant of one or both of the second and third insulating films is greater than the dielectric constant of the first insulating film.

Abstract: A jelly-roll type battery unit includes a first electrode plate having a first electrode current collector with a first electrode tab, and a first electrode active material layer on a surface of the first electrode current collector; a second electrode plate having a second electrode current collector with a second electrode tab, and a second electrode active material layer on a surface of the second electrode current collector; and a separator interposed between the first electrode plate and the second electrode plate. The electrode tab is incorporated into the electrode current collector in an area of either first or second electrode plate where the corresponding electrode active material layer is not coated. The electrode tab is cut widthwise with respect to the electrode current collector from a center area of the electrode current collector and folded, and an insulating tape is adhered to either surface of the electrode tab.

Abstract: A voltage-controlled oscillator includes a bias circuit and a delay circuit. The bias circuit may generate a bias voltage signal pair having levels that are based on the voltage level of an input voltage signal and that are constrained by the values of a maximum current signal and a minimum current signal that are generated in the bias circuit. The delay circuit generates an output signal having a frequency that varies in response to the bias voltage signal pair. Because an operating frequency range of a voltage-controlled oscillator VCO is limited by a bias circuit, the VCO can operate with reduced gain and can limit the maximum operating frequency to a predetermined level. The VCO may also include a PTAT current generator in the bias circuit which can allow the VCO to compensate for variations of the VCO output frequency based on temperature.

Abstract: A charge pump generates a first sub up current and a second sub up current that vary complementarily with a change in a voltage at an output terminal. The charge pump also generates a first sub down current and a second sub down current that vary complementarily with the change in the voltage at the output terminal. With such complementary relationships, the total up/down currents remain substantially constant and balanced with the change in the voltage at the output terminal.

Abstract: An integrated circuit device includes a fast-locking phase locked loop (PLL). This PLL includes a phase-frequency detector and first and second charge pumps, which are responsive to first and second control signals generated by the phase-frequency detector. The first and second charge pumps have different current sourcing characteristics when the first control signal is active and different current sinking characteristics when the second control signal is active.