Abstract: A tunnel insulating layer and a charge storage layer are sequentially stacked on a substrate. A recess region penetrates the charge storage layer, the tunnel insulating layer and a portion of the substrate. The recess region is defined by a bottom surface and a side surface extending from the bottom surface. A first dielectric pattern includes a bottom portion covering the bottom surface and inner walls extending from the bottom portion and covering a portion of the side surface of the recess region. A second dielectric pattern is in the recess region between the inner walls of the first dielectric pattern, and the second dielectric pattern enclosing an air gap. The air gap that is enclosed by the second dielectric pattern may extend through a major portion of the second dielectric pattern in a direction away from the bottom surface of the recess region.

Abstract: Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated to a temperature of at least about 400° C. The spin-on-glass layer may comprise a siloxane-based material, a silanol-based material or a silazane-based material.

Abstract: Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.

Abstract: In one aspect, a self-aligned contact method is provided in which a substrate having a plurality of structures are spaced apart over a surface of the substrate, and a sacrificial film is deposited over and between the plurality of structures, where a material of the sacrificial film has a given withstand temperature. The sacrificial film is patterned to expose a portion of the substrate adjacent the plurality of structures. An insulating layer is deposited over the sacrificial film and the exposed portion of the substrate, where the depositing of the insulating layer includes a heat treatment at a temperature which is less than the withstand temperature of the sacrificial film material. The insulating layer is planarized to expose the sacrificial film, and the sacrificial film is removed to expose respective areas between the plurality of structures. The respective areas between the plurality of structures are filled with a conductive material.

Abstract: Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.

Abstract: Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.

Abstract: Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated to a temperature of at least about 400° C. The spin-on-glass layer may comprise a siloxane-based material, a silanol-based material or a silazane-based material.

Abstract: Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invention, methods of forming films in a semiconductor manufacturing process, and methods of manufacturing semiconductor devices are also provided.