Patents by Inventor Ju-Seop Park
Ju-Seop Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240038288Abstract: In a memory device, a control circuit detects determines an aggressor row address, indicating an aggressor row of a memory cell array, at a random time. The aggressor row address or a value derived from the aggressor row address is stored in a queue. The control circuit controls a refresh operation of one or more victim rows based on the aggressor row address in response to a targeted refresh command.Type: ApplicationFiled: February 17, 2023Publication date: February 1, 2024Inventors: Dongha Kim, Hyunki Kim, Sungchul Park, Ju-Seop Park, Dongsu Lee
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Patent number: 9123407Abstract: A data read start decision device includes: a storing circuit configured to store code key data; a read check circuit configured to output a read start signal in response to code key data read from the storing circuit, and a controller configured to start reading environment setting data from the storing circuit in response to the read start signal. The read check circuit is configured to at least one of: receive the read start signal from the controller and transfer the read start signal to the controller in response to the read code key data; and generate the read start signal based on the read code key data and output the read start signal to the controller.Type: GrantFiled: November 7, 2013Date of Patent: September 1, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Je-Min Ryu, Sung-Min Seo, Ju-Seop Park
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Patent number: 8848475Abstract: A fuse circuit includes a program unit and a sensing unit. The program unit is programmed in response to a program signal and outputs a program output signal in response to a sensing enable signal. The sensing unit outputs a sensing output signal based on the program output signal and the sensing output signal indicates whether the program unit is programmed or not. The program unit includes an anti-fuse cell, a selection transistor, a program transistor and a sensing transistor. The anti-fuse cell includes at least two anti-fuse elements which are connected in parallel and are respectively broken down at different levels of a program voltage.Type: GrantFiled: August 29, 2011Date of Patent: September 30, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Pil Son, Seong-Jin Jang, Byung-Sik Moon, Hyuck-Chai Jung, Ju-Seop Park
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Patent number: 8804448Abstract: For selecting anti-fuses in a semiconductor memory device, a decoder block may be enabled to receive selection information for selecting the anti-fuses. The selection information is decoded in the decoder block to select at least one of the anti-fuses. Target operation is performed on the selected anti-fuses. The decoder block is disabled.Type: GrantFiled: May 2, 2012Date of Patent: August 12, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Ju-Seop Park, Jong-Pil Son, Sin-Ho Kim, Hyoung-Joo Kim, Je-Min Ryu, Sung-Min Seo
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Publication number: 20140219038Abstract: A data read start decision device includes: a storing circuit configured to store code key data; a read check circuit configured to output a read start signal in response to code key data read from the storing circuit, and a controller configured to start reading environment setting data from the storing circuit in response to the read start signal. The read check circuit is configured to at least one of: receive the read start signal from the controller and transfer the read start signal to the controller in response to the read code key data; and generate the read start signal based on the read code key data and output the read start signal to the controller.Type: ApplicationFiled: November 7, 2013Publication date: August 7, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Je-Min RYU, Sung-Min SEO, Ju-Seop PARK
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Patent number: 8599635Abstract: A fuse circuit includes a program unit, a sensing unit and a control unit. The program unit is programmed in response to a program signal, and outputs a program output signal in response to a sensing enable signal. The sensing unit includes a variable resistor unit that has a resistance that varies based on a control signal, and generates a sensing output signal based on the resistance of the variable resistor unit and the program output signal. The control unit generates the control signal having a value changed depending on operation modes, and performs a verification operation with respect to the program unit based on the sensing output signal to generate a verification result. The program unit may be re-programmed based on the verification result.Type: GrantFiled: August 9, 2011Date of Patent: December 3, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Ho Kim, Jong-Pil Son, Seong-Jin Jang, Byung-Sik Moon, Seung-Hoon Oh, Ju-Seop Park
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Publication number: 20130286759Abstract: For selecting anti-fuses in a semiconductor memory device, a decoder block may be enabled to receive selection information for selecting the anti-fuses. The selection information is decoded in the decoder block to select at least one of the anti-fuses. Target operation is performed on the selected anti-fuses. The decoder block is disabled.Type: ApplicationFiled: May 2, 2012Publication date: October 31, 2013Inventors: Ju-Seop Park, Jong-Pil Son, Sin-Ho Kim, Hyoung-Joo Kim, Je-Min Ryu, Sung-Min Seo
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Patent number: 8547763Abstract: A memory cell includes a selection transistor on a substrate and an antifuse on the substrate. The selection transistor includes a first gate connected to a read word line, a first gate insulation layer that insulates the first gate from the substrate, a first source region connected to a bit line, and a first drain region, an impurity concentration of the first drain region being lower than an impurity concentration of the first source region. The antifuse includes a first electrode connected to a program word line and a second electrode connected to the selection transistor.Type: GrantFiled: August 29, 2011Date of Patent: October 1, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Pil Son, Seong-Jin Jang, Byung-Sik Moon, Doo-Young Kim, Ju-Seop Park
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Patent number: 8514648Abstract: Provided are an anti-fuse, an anti-fuse circuit, and a method of fabricating the anti-fuse. The anti-fuse includes a semiconductor substrate, an isolation region, a channel diffusion region, a gate oxide layer, and a gate electrode. The semiconductor substrate includes a top surface and a bottom portion, the bottom portion of the semiconductor substrate having a first conductivity type. The isolation region is disposed inward from the top surface of the semiconductor substrate to a first depth. The channel diffusion region is disposed inward from the top surface of the semiconductor substrate to a second depth, the second depth located at a depth where the channel diffusion region meets an upper boundary of the bottom portion of the semiconductor substrate.Type: GrantFiled: March 18, 2011Date of Patent: August 20, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Pil Son, Seong-Jin Jang, Byung-Sik Moon, Doo-Young Kim, Hyoung-Joo Kim, Ju-Seop Park
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Patent number: 8482989Abstract: Provided are a semiconductor device including a fuse and a method of operating the same. The semiconductor device includes a fuse array, a first register unit, and a second register unit. The fuse array includes a plurality of rows and columns. The first register unit receives at least one row of fuse data from the fuse array. Fuse data of the at least one row of fuse data is received in parallel by the first register unit. The second register unit receives the fuse data at least one bit at a time from the first register unit.Type: GrantFiled: November 14, 2011Date of Patent: July 9, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-pil Son, Seong-jin Jang, Byung-sik Moon, Ju-seop Park
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Publication number: 20130003477Abstract: A semiconductor memory device including an antifuse cell array and a spare antifuse cell array are provided. An antifuse cell array includes a first set of antifuse cells arranged in a first direction and each one of the first set of antifuse cells is connected to a corresponding one of first through nth word lines. The spare antifuse cell array includes a first spare set of antifuse cells arranged in the first direction and each one of the first spare set of antifuse cells is connected to a corresponding one of first through kth spare word lines. A first operation control circuit is configured to program antifuses of the antifuse cell array and the spare antifuse cell array, and to read a status of each of the antifuses. The first operation control circuit is commonly connected to the first set of antifuse cells and the first spare set of antifuse cells.Type: ApplicationFiled: June 27, 2012Publication date: January 3, 2013Inventors: Ju-Seop PARK, Sin Ho KIM, Byung-Sik MOON, Jong-Pil SON, Jin-Ho KIM, Hyoung-Joo KIM, Jong-Min OH, Seong-Jin JANG
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Publication number: 20120120733Abstract: Provided are a semiconductor device including a fuse and a method of operating the same. The semiconductor device includes a fuse array, a first register unit, and a second register unit. The fuse array includes a plurality of rows and columns. The first register unit receives at least one row of fuse data from the fuse array. Fuse data of the at least one row of fuse data is received in parallel by the first register unit. The second register unit receives the fuse data at least one bit at a time from the first register unit.Type: ApplicationFiled: November 14, 2011Publication date: May 17, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-pil Son, Seong-jin Jang, Byung-sik Moon, Ju-seop Park
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Publication number: 20120051154Abstract: A fuse circuit includes a program unit and a sensing unit. The program unit is programmed in response to a program signal and outputs a program output signal in response to a sensing enable signal. The sensing unit outputs a sensing output signal based on the program output signal and the sensing output signal indicates whether the program unit is programmed or not. The program unit includes an anti-fuse cell, a selection transistor, a program transistor and a sensing transistor. The anti-fuse cell includes at least two anti-fuse elements which are connected in parallel and are respectively broken down at different levels of a program voltage.Type: ApplicationFiled: August 29, 2011Publication date: March 1, 2012Applicant: Samsung Electronics Co., Ltd.Inventors: Jong-Pil SON, Seong-Jin Jang, Byung-Sik Moon, Hyuck-Chai Jung, Ju-Seop Park
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Publication number: 20120051164Abstract: A memory cell includes a selection transistor on a substrate and an antifuse on the substrate. The selection transistor includes a first gate connected to a read word line, a first gate insulation layer that insulates the first gate from the substrate, a first source region connected to a bit line, and a first drain region, an impurity concentration of the first drain region being lower than an impurity concentration of the first source region. The antifuse includes a first electrode connected to a program word line and a second electrode connected to the selection transistor.Type: ApplicationFiled: August 29, 2011Publication date: March 1, 2012Inventors: Jong-Pil Son, Seong-Jin Jang, Byung-Sik Moon, Doo-Young Kim, Ju-Seop Park
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Publication number: 20120039140Abstract: A fuse circuit includes a program unit, a sensing unit and a control unit. The program unit is programmed in response to a program signal, and outputs a program output signal in response to a sensing enable signal. The sensing unit includes a variable resistor unit that has a resistance that varies based on a control signal, and generates a sensing output signal based on the resistance of the variable resistor unit and the program output signal. The control unit generates the control signal having a value changed depending on operation modes, and performs a verification operation with respect to the program unit based on the sensing output signal to generate a verification result. The program unit may be re-programmed based on the verification result.Type: ApplicationFiled: August 9, 2011Publication date: February 16, 2012Inventors: Jin-Ho KIM, Jong-Pil SON, Seong-Jin JANG, Byung-Sik MOON, Seung-Hoon OH, Ju-Seop PARK
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Patent number: 8059175Abstract: A method for operating an image capture device having a sensor with an array of first and second pixels includes capturing an image a plurality of times with the second pixels to produce a corresponding second image signal, the second pixels being white pixels, capturing the image a single time with the first pixels to produce a corresponding first image signal, inputting selecting signals to the sensor via a row driver to obtain the first and second image signals from the first and second pixels, respectively, and converting the first and second image signals to respective digital values via an analog-to-digital converter.Type: GrantFiled: November 9, 2007Date of Patent: November 15, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Ju-Seop Park, Gun-Hee Han, Seog-Heon Ham
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Publication number: 20110267915Abstract: Provided are an anti-fuse, an anti-fuse circuit, and a method of fabricating the anti-fuse. The anti-fuse includes a semiconductor substrate, an isolation region, a channel diffusion region, a gate oxide layer, and a gate electrode. The semiconductor substrate includes a top surface and a bottom portion, the bottom portion of the semiconductor substrate having a first conductivity type. The isolation region is disposed inward from the top surface of the semiconductor substrate to a first depth. The channel diffusion region is disposed inward from the top surface of the semiconductor substrate to a second depth, the second depth located at a depth where the channel diffusion region meets an upper boundary of the bottom portion of the semiconductor substrate.Type: ApplicationFiled: March 18, 2011Publication date: November 3, 2011Inventors: Jong-Pil SON, Seong-Jin Jang, Byung-Sik Moon, Doo-Young Kim, Hyoung-Joo Kim, Ju-Seop Park
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Publication number: 20080122961Abstract: A method for operating an image capture device having a sensor with an array of first and second pixels includes capturing an image a plurality of times with the second pixels to produce a corresponding second image signal, the second pixels being white pixels, capturing the image a single time with the first pixels to produce a corresponding first image signal, inputting selecting signals to the sensor via a row driver to obtain the first and second image signals from the first and second pixels, respectively, and converting the first and second image signals to respective digital values via an analog-to-digital converter.Type: ApplicationFiled: November 9, 2007Publication date: May 29, 2008Inventors: Ju-Seop Park, Gun-Hee Han, Seong-Heon Ham