Patents by Inventor Ju-Te Chen
Ju-Te Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11151724Abstract: An automatic detecting method and an automatic detecting apparatus using the same are provided. The automatic detecting apparatus includes an inputting unit, a dividing unit, a contouring unit, a range analyzing unit, a boundary analyzing unit, an edge detecting unit, an expanding unit and an overlapping unit. The dividing unit is used for dividing an overlooking image into four clusters via a clustering algorithm. The contouring unit is used for obtaining a contour. The range analyzing unit is used for obtaining a detecting range. The boundary analyzing unit is used for obtaining a circular boundary in the detecting range. The edge detecting unit is used for obtaining a plurality of edges in the circular boundary. The expanding unit is used for expanding the edges to obtain a plurality of expanded edges. The overlapping unit is used for overlapping the expanded edges and the contour to obtain a defect pattern.Type: GrantFiled: June 3, 2019Date of Patent: October 19, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Tzu-Ping Kao, Ching-Hsing Hsieh, Chia-Chi Chang, Ju-Te Chen, Chen-Hui Huang, Cheng-Hsien Chen
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Publication number: 20200380693Abstract: An automatic detecting method and an automatic detecting apparatus using the same are provided. The automatic detecting apparatus includes an inputting unit, a dividing unit, a contouring unit, a range analyzing unit, a boundary analyzing unit, an edge detecting unit, an expanding unit and an overlapping unit. The dividing unit is used for dividing an overlooking image into four clusters via a clustering algorithm. The contouring unit is used for obtaining a contour. The range analyzing unit is used for obtaining a detecting range. The boundary analyzing unit is used for obtaining a circular boundary in the detecting range. The edge detecting unit is used for obtaining a plurality of edges in the circular boundary. The expanding unit is used for expanding the edges to obtain a plurality of expanded edges. The overlapping unit is used for overlapping the expanded edges and the contour to obtain a defect pattern.Type: ApplicationFiled: June 3, 2019Publication date: December 3, 2020Inventors: Tzu-Ping KAO, Ching-Hsing HSIEH, Chia-Chi CHANG, Ju-Te CHEN, Chen-Hui HUANG, Cheng-Hsien CHEN
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Patent number: 7871745Abstract: The invention provides an exposure method for manufacturing a device. The method includes providing a wafer having several exposure regions with a photoresist layer covering thereon. A feedback parameter map with several exposure-region feedback parameter sets respectively corresponds to the exposure regions of the wafer. At least one of the exposure-region feedback parameter sets is different from the rest of the exposure-region feedback parameter sets. According to the feedback parameter map, an exposure process is sequentially performed on each of the exposure regions of the wafer through an exposure tool to pattern the photoresist layer on the wafer. While the exposure tool performs the exposure process on each of the exposure regions, an exposure process parameter set of the exposure tool is adjusted based on the exposure-region feedback parameter sets corresponding to the exposure region in the feedback parameter map.Type: GrantFiled: December 27, 2007Date of Patent: January 18, 2011Assignee: United Microelectronics Corp.Inventors: Ju-Te Chen, Wen-Tsung Wu
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Patent number: 7669171Abstract: A prediction model for exposure dose is indicated by the following formula, E=E0+EC, wherein E represents an optimized exposure dose, E0 represents a preset exposure dose of a process control system, and EC represents an exposure dose compensation value, and EC=[(MTTdiff/X)/(CDmask/X)]×(ES/A?)×(Wlast+Wavg), wherein MTTdiff represents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDmask represents the actual critical dimension of the mask, X represents the magnification of the mask, ES represents the actual exposure dose of a previous lot, A? represents an experimental value obtained from the results of different lots, Wlast represents the last batch of weights and Wavg represents an average weight, and CDmask, ES, A?, Wlast and Wavg are set parameters built into the process control system.Type: GrantFiled: September 5, 2007Date of Patent: February 23, 2010Assignee: United Miceoelectronics Corp.Inventors: Ju-Te Chen, Chung-An Chen, Chi-Ching Huang, Wen-Tsung Wu, Shih-Ming Yen
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Publication number: 20090170039Abstract: The invention provides an exposure method for manufacturing a device. The method includes providing a wafer having several exposure regions with a photoresist layer covering thereon. A feedback parameter map with several exposure-region feedback parameter sets respectively corresponds to the exposure regions of the wafer. At least one of the exposure-region feedback parameter sets is different from the rest of the exposure-region feedback parameter sets. According to the feedback parameter map, an exposure process is sequentially performed on each of the exposure regions of the wafer through an exposure tool to pattern the photoresist layer on the wafer. While the exposure tool performs the exposure process on each of the exposure regions, an exposure process parameter set of the exposure tool is adjusted based on the exposure-region feedback parameter sets corresponding to the exposure region in the feedback parameter map.Type: ApplicationFiled: December 27, 2007Publication date: July 2, 2009Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ju-Te Chen, Wen-Tsung Wu
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Publication number: 20090064084Abstract: A prediction model for exposure dose is indicated by the following formula, E=E0+EC, wherein E represents an optimized exposure dose, E0 represents a preset exposure dose of a process control system, and EC represents an exposure dose compensation value, and EC=[(MTTdiff/X)/(CDmask/X)]×(ES/A?)×(Wlast+Wavg), wherein MTTdiff represents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDmask represents the actual critical dimension of the mask, X represents the magnification of the mask, ES represents the actual exposure dose of a previous lot, A? represents an experimental value obtained from the results of different lots, Wlast represents the last batch of weights and Wavg represents an average weight, and CDmask, ES, A?, Wlast and Wavg are set parameters built into the process control system.Type: ApplicationFiled: September 5, 2007Publication date: March 5, 2009Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ju-Te Chen, Chung-An Chen, Chi-Ching Huang, Wen-Tsung Wu, Shih-Ming Yen
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Publication number: 20090011612Abstract: A method of shortening a photoresist coating process for a plurality of wafers is provided, wherein the photoresist coating process includes a first coating operation to a first wafer using a first photoresist liquid and a second coating operation to a second wafer using a second photoresist liquid. The method includes performing a dummy dispense operation of the second photoresist liquid within the period of the backend part of the first coating operation that needs no nozzle.Type: ApplicationFiled: July 5, 2007Publication date: January 8, 2009Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chiun-Show Chen, Chao-Ying Chung, Ju-Te Chen, Chao-Hsien Wu